PNA1401LF PANASONIC | Alldatasheet
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Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors For optical control systems Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltageV CEO 30 V Collector to base voltage V CBO * 40 V Emitter to collector voltageV ECO 5V Emitter to base voltage V EBO * 5V Collector current I C 50 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature T stg –30 to +100 ˚C * PNZ102F only 1: Emitter 2: Collector Unit : mm ø4.6–0.15 Glass window 2.54–0.25 1.0 –0.2 1.0 –0.15 ø5.75 max. 2-ø0.45–0.05 4.5–0.212.7 min. –3˚ PNA1401LF 1: Emitter 2: Base 3: Collector Unit : mm ø4.6–0.15 Glass window 2.54–0.25 1.0 –0.2 1.0 –0.15 ø5.75 max. 3-ø0.45–0.05 4.5–0.212.7 min. –3˚ PNZ102F
PNA1401LF, PNZ102F Phototransistors /,/, /,/, /, 50Ω R L td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) t f : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) V CC Sig.OUT Sig.IN (Input pulse) (Output pulse) 10% 90% td tr tf PC — Ta 200 160 120 Ambient temperature Ta (˚C ) Collector power dissipation PC (mW) 0 2 04 06 08 0 1 0 0 – 20 ICE(L) — V CE 2.0 1.6 1.2 0.4 0.8 Collector to emitter voltage VCE (V) Collector photo current ICE(L) (mA) 0 8 16 24 32 ICE(L) — L 10 –1 10 –2 Illuminance L (lx) Collector photo current ICE(L) (mA) 10 10 2 10 3 10 –3 V CE = 10V Ta = 25˚C T = 2856K L = 50 lx 100 lx 200 lx 300 lx 400 lx 500 lx 600 lx 700 lx800 lx900 lx 1000 lx Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Dark current I CEO V CE = 10V 5 300 nA Collector photo current I CE(L) V CE = 10V , L = 100 lx*1 0.1 0.3 mA Peak sensitivity wave length λP V CE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 40 deg. Response time t r, tf*2 V CC = 10V , ICE(L) = 5mA, RL = 100Ω 3 µs Collector saturation voltageV CE(sat) L = 500 lx*1 PNA1401LF ICE(L) = 0.1mA 0.2 0.4 VPNZ102F ICE(L) = 0.1mA *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Phototransistors PNA1401LF, PNZ102F 0˚ 10˚ 20˚ 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ Directivity characteristics ICEO — Ta 10 3 10 2 Ambient temperature Ta (˚C ) V CE = 10V Dark current ICEO (nA) 10 –1 – 40 0 40 80 120 V CE = 10V T = 2856K ICE(L) — Ta 10 –1 Ambient temperature Ta (˚C ) Collector photo current ICE(L) (mA) – 40 0 40 80 120 10 –2 Spectral sensitivity characteristics 100 Wavelength λ (nm) Relative sensitivity S (%) 400 600 800 1000 1200 200 Ta = 25˚C tr — ICE(L) Collector photo current ICE(L) (mA) Rise time tr (µs) V CC = 10V Ta = 25˚C10 3 10 2 10 –1 10 –1 10 10 21 10 –2 10 –2 tf — ICE(L) Collector photo current ICE(L) (mA) Fall time tf (µs) V CC = 10V Ta = 25˚C10 3 10 2 10 –1 10 –1 10 10 21 10 –2 10 –2 100 Relative sensitivity S (%) I = 500 lx 100 lx 500Ω 100Ω R L = 1kΩ R L = 1kΩ 500Ω 100Ω