PN5114 MICROSS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PN5114 LOW ON RESISTANCE rDS(on) ≤ 75Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +200°C Operating Junction Temperature ‐ 55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 500mW MAXIMUM CURRENT Gate Current (Note 1) IG = ‐50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V PN5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 4 ‐‐ 10 VDS = ‐15V, ID = ‐1nA VGS(F) Gate to Source Forward Voltage ‐‐ ‐ 0.7 ‐ 1 IG = ‐1mA, VDS = 0V VDS(on) Drain to Source On Voltage ‐‐ ‐ 0.7 ‐‐ VGS = 0V, ID = ‐7mA ‐‐ ‐ 0.5 ‐‐ VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐ 30 ‐‐ ‐ 90 mA VDS = ‐18V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 pA VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 5 ‐‐ VDS = ‐15V, ID = ‐1mA ID(off) Drain Cutoff Current ‐‐ ‐ 10 ‐ 500 VDS = ‐15V, VGS = 12V ‐‐ ‐ 10 ‐‐ VDS = ‐15V, VGS = 7V ‐‐ ‐ 10 ‐‐ VDS = ‐15V, VGS = 5V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = ‐1mA, VGS = 0V PN5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ mS VDS = ‐15V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 20 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ 20 25 pF VDS = ‐15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 5 7 VDS = 0V, VGS = 12V, f = 1MHz ‐‐ 6 ‐‐ VDS = 0V, VGS = 7V, f = 1MHz ‐‐ 6 ‐‐ VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage ‐‐ 20 ‐‐ nV/√Hz VDG = 10V, ID = 10mA , f = 1kHz PN5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 6 ns VGS(L) = ‐11V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 10 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 PN5114 SWITCHING CIRCUIT PARAMETERS VDD ‐ 10V VGG 20V RL 430Ω RG 100Ω ID(on) ‐ 15mA PN5114 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix PN5114 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The TO-92 provides a low cost option and ease of manufacturing. (See Packaging Information). PN5114 Applications: Analog Switches Commutators Cho ppers PN5114 Benefits: Low On Resistance I D(off) ≤ 500 pA Switches directl y from TTL logic Note 1 ‐ Absolute maximum ratings are limiting values above which PN5114 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% SWITCHING TEST CIRCUIT Micross Components Europe Available Packages: PN5114 in TO-92 PN5114 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution TO-92 (Bottom View)