PN4275 NJSEMI | Alldatasheet

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SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PN4275 TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol VCEO VcBO VEBO Ic TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 4.5 200 -55 to +150 Units V V V mA These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 15D degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol PD Rejc R»JA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4275 350 2.8 125 357 Units mW mW7°C °C/W °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders, Quality Semi-Conductors

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Electrical Characteristics

TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CES IB IcBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base Cutoff Current Collector Cutoff Current lc= 10mA, IB =0 lc= 10jiA, IE = 0 IE= 10 (lA, lc = 0 lc=10nA,lB = 0 VCE = 20 V VCB = 20 V, IE = 0, TA = 65 °C 4.5 0.4 V V V V HA ON CHARACTERISTICS* hFE VcE(sat) VsE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage lc= 10mA, VCE = 1.0V lc = 30 mA, VCE = 0.4 V lr.= 100mA, VCE = 1.0V lc= 10mA, IB = 1.0mA lc = 30 mA, IB = 3.0 mA lc = 10 mA, IB = 3.3 mA lc= 100mA, IB = 10mA lc= 10 mA, IB = 1.0mA, TA=65°C lc= 10 mA, IB= 1.0 mA I0 = 30 mA, IB = 3.0 mA lc= 10 mA, IB = 3.3mA lc= 100mA, IB = 10mA 0.72 0.74 120 0.20 0.25 0.18 0.50 0.30 0.85 1.15 1.0 1.6 V V V V V V V V V SMALL SIGNAL CHARACTERISTICS Cob hfe Output Capacitance Small-Signal Current Gain VCB = 5.0V, f = 1.0MHz lc = 10 mA, VCE = 10 V, f = 100 MHz 4.0 4.0 pF SWITCHING CHARACTERISTICS ton td tr Wf ts tf ts Tum-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time Storage Time VCC = 3.0V, lc = 10mA, IBI = 3.3mA, VBE (off) = -3.0 V Vcc=3.0V, lc = 10mA IB1 = IB2 = 3.3mA VBE (off) = -3.0 V lc= lBi = lB2 = 10mA 9.0 7.0 8.0 8.0 ns ns ns ns ns ns ns Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%

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