PN4122

PN4122 NJSEMI | Alldatasheet

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G.Z.IIZ.U ^^mi-donductoi Lp 10 ducts., Dna CX u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PN4122 TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol VCEO VCBO VEBO Ic Tj, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 5.0 200 -55 to +150 Units V V V mA These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C, 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol PD RWC RHJA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4122 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

PNP General Purpose Amplifier (continued)

Electrical Characteristics

TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR}CEO V(BR)CBO V(BR)EBO V(BR)CES IB ICES Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base Cutoff Current Collector Cutoff Current lc = 10 mA, IB= 0 lc= 10u.A, IE = 0 IE= 10 nA, lc = 0 IC=10HA VCE = 30 V VCE = 30 V VCE = 30 V, TA = 65 °C 5.0 V V V nA nA nA uA ON CHARACTERISTICS* hFE VcE(sat) VsE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE= 1.0V, lc= 100 nA VCE= 1.0V, lc= 1.0mA VCE = 1.0V, |c= 10 mA VCE= 1.0V, lc = 50 mA lc = 1.0mA, IB = 0.1 mA lc= 10mA, IB= 1.0mA lc = 50 mA, la= 5.0mA lc = 1.0mA, IB = 0.1 mA lc = 10mA, IB= 1.0mA lc = 50 mA, IB= 5.0 mA 100 150 150 0.70 300 0.13 0.14 0.30 0.75 0.90 1.10 V V V V V V SMALL SIGNAL CHARACTERISTICS Cob Qb hfe hie hre hoe rb'Cc NF Output Capacitance Input Capacitance Small-Signal Current Gain Input Impedance Voltage Feedback Ratio Output Admittance Collector-Base Time Constant Noise Figure VCB= 10V, f = 1.0MHz VEB= 0.5V, f = 1.0MHz lc = 10 mA, VCE = 20 V, f = 100 MHz lc= 1.0mA, VCE = 10V, f = 1 kHz lc = 1.0mA, VCE = 10V, f = 1.0kHz VCE = 20V, lc= 10mA f = 80 MHz VCE = 5.0V, lc= 1.0mA, Rs= 100 n, f = 100MHz, Bw=15MHz VCE = 5.0V, lc= 100 u.A, Rs= 1.0kQ, PBw= 15.7 kHz 4.5 150 4.0 8.0 4.5 8.0 450 4.0 6.0 4.0 PF PF kn x10'4 ^mhos ps dB dB SWITCHING CHARACTERISTICS ton td tr toff ta tf Tum-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time Vcc = 30 V, lc = 50 mA, IB, = 5.0mA, VBE( Off) = 3.0V Vcc = 30 V, lc = 50 mA IBI = 'e2 = 5.0mA 150 140 ns ns ns ns ns ns Pulse Test: Pulse Width < 300 |is, Duty Cycle < 2.0%

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