PNZ323 PANASONIC | Alldatasheet
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1Publication date: April 2004 SHE00036BED PNZ323 (PN323) Silicon planar type For optical control systems ■ Features
- Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
- High sensitivity, high reliability
- Peak emission wavelength matched with infrared light emitting diodes: λp = 900 nm (typ.)
- Wide detection area, wide half-power angle: θ = 70° (typ.)
- Adoption of visible light cutoff resin ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage V R 30 V Power dissipation P D 100 mW Operating ambient temperature T opr −30 to +85 °C Storage temperature T stg −40 to +100 °C Parameter Symbol Conditions Min Typ Max Unit Dark current I D VR = 10 V 5 50 nA Photocurrent *1 IL VR = 10 V, L = 1 000 lx 55 µA Sensitivity to infrared radiation *2 SIR VR = 5 V, H = 0.1 mW/cm2 4.5 6.0 µA Peak emission wavelength λp VR = 10 V 900 nm Rise time *2 tr VR = 10 V, RL = 1 kΩ 50 ns Fall time *2 tf 50 ns Rise time *2 tr VR = 10 V, RL = 100 kΩ 5 µs Fall time *2 tf 5 µs Terminal capacitance C t VR = 0 V, f = 1 MHz 70 pF Half-power angle θ The angle from which photocurrent 70 ° becomes 50% ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Source: Infrared radiation ( λ = 940 nm) *3: Switching time measurement circuit Unit: mm 1: Anode 2: Cathode (2.3)Chip 4.6±0.2 Not soldered 1.5 max. (0.5) (1.0) (2) 7.5±0.2 5.5±0.2 6.0±0.2 31.25±1.0 0.5 (1.32) (2.54) 3.8±0.2 (2.3) 0.6±0.1 (2-0.6±0.1) 50 Ω λP = 900 nm tr: Rise time tf: Fall time Sig. in RL VR Sig. out (Input pulse) (Output pulse) 10% 90% tr tf Note) The part number in the parenthesis shows conventional part number.
2 SHE00036BED
∆IL Ta Spectral sensitivity characteristics Directivity characteristics PD Ta IL LI D Ta Ct VR tr , tf RL ID VR Terminal capacitance Ct (pF) Reverse voltage VR (V) Dark current ID (nA) Reverse voltage VR (V) Rise time tr , Fall time tf (µs) Load resistance RL (kΩ) Power dissipation PD (mW) Ambient temperature Ta (°C) Relative photocurrent ∆IL (%) Ambient temperature Ta (°C) Dark current ID (nA) Ambient temperature Ta (°C) Photocurrent IL (µA) Illuminance L (lx) Relative sensitivity ∆S (%) Wavelength λ (nm) Relative sensitivity ∆S (%) Half-power angle θ (°) 120 100 0 2 04 06 08 0 1 0 0−30 160 120 8004 0 −40 V R = 10 V L = 1 000 lx T = 2 856 K VR = 10 V Ta = 25°C 100 0600 700 800 900 1 2001 1001 000 VR = 10 V Ta = 25°C T = 2 856 K Ta = 25°C 103 102 102 10410310−1 103 102 4008 0 10−1 102 10−1 −40 VR = 10 V 100 80 40 0 40 800 100 010 −2 10−1 11 0 1 0 2 102 10−1 11 0 0 4 8 40322416810210−2 10−1 10% 90% tr tf RL VR = 10 V Sig. out 50 Ω Sig. in
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.