PN2221_12 CENTRAL | Alldatasheet
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NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2221, PN2222 series types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER PN2221 PN2221A MAXIMUM RATINGS: (TA=25°C) SYMBOL PN2222 PN2222A UNITS Collector-Base Voltage V CBO 60 75 V Collector-Emitter Voltage V CEO 30 40 V Emitter-Base Voltage V EBO 5.0 6.0 V Continuous Collector Current I C 800 mA Power Dissipation P D 625 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C PN2221 PN2221A ELECTRICAL CHARACTERISTICS: (TA=25°C) PN2222 PN2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO V CB=50V - 10 - - nA ICBO V CB=60V - - - 10 nA ICEV V CE=60V, VEB=3.0V - - - 10 nA IEBO V EB=3.0V - 10 - 10 nA BVCBO I C=10μA 60 - 75 - V BVCEO I C=10mA 30 - 40 - V BVEBO I E=10μA 5.0 - 6.0 - V VCE(SAT) I C=150mA, IB=15mA - 0.4 - 0.3 V VCE(SAT) I C=500mA, IB=50mA - 1.6 - 1.0 V VBE(SAT) I C=150mA, IB=15mA - 1.3 - 1.2 V VBE(SAT) I C=500mA, IB=50mA - 2.6 - 2.0 V PN2221 PN2222 PN2221A PN2222A MIN MAX MIN MAX hFE V CE=10V, IC=0.1mA 20 - 35 - hFE V CE=10V, IC=1.0mA 25 - 50 - hFE V CE=10V, IC=10mA 35 - 75 - hFE V CE=10V, IC=150mA 40 120 100 300 hFE V CE=1.0V, IC=150mA 20 - 50 - hFE V CE=10V, IC=500mA (PN2221, PN2222) 20 - 30 - hFE V CE=10V, IC=500mA (PN2221A, PN2222A) 25 - 40 - fT V CE=20V, IC=20mA, f=100MHz (except PN2222A) 250 - 250 - MHz fT V CE=20V, IC=20mA, f=100MHz (PN2222A) - - 300 - MHz Cob V CB=10V, f=100kHz - 8.0 - 8.0 pF ton V CC=30V, IC=150mA, IB=15mA - 35 - 35 ns toff V CC=30V, IC=150mA, IB1=IB2=15mA - 285 - 285 ns TO-92 CASE R1 (30-January 2012) www.centralsemi.com
TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER www.centralsemi.com R1 (30-January 2012)