PNZ115 PANASONIC | Alldatasheet
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Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. (typ.) Fast response : tr = 5 µs (typ.) Side-view type package Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Dark current I CEO V CE = 10V 0.02 2 µA Collector photo current I CE(L) V CE = 10V , L = 100 lx*1 2.0 4.5 mA Peak sensitivity wavelength λP V CE = 10V 900 nm Acceptance half angle θ Measured from the optical axis to the half power point 35 deg. Rise time t r*2 V CC = 10V , ICE(L) = 5mA 5 µs Fall time t f*2 R L = 100Ω 6 µs Collector saturation voltageV CE(sat) ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Phototransistors /;/; /;/; /; 50Ω R L td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) t f : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) V CC Sig.OUT Sig.IN (Input pulse) (Output pulse) 10% 90% td tr tf Unit : mm 2.3 1.9 4.5±0.3 123 1.2 4.2±0.3 ø3.5±0.2 4.8±0.3 2.4 2.4 12.5 min. 10.0 min. 2.0 0.45±0.2 3-0.45±0.2 Not soldered 1.27 1.27 1: Emitter 2: Collector 3: Base Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltageV CEO 20 V Collector to base voltage V CBO 30 V Emitter to collector voltageV ECO 5V Emitter to base voltage V EBO 5V Collector current I C 10 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature T stg –30 to +100 ˚C Note) The part number in the parenthesis shows conventional part number.
PC — Ta 120 100 Ambient temperature Ta (˚C ) Collector power dissipation PC (mW) 0 2 04 06 08 0 1 0 0 – 20 Ta = 25˚C T = 2856K ICE(L) — V CE Collector to emitter voltage VCE (V) Collector photo current ICE(L) (mA) 02 0 1681 242 4 ICE(L) — L 10 2 Illuminance L (lx) Collector photo current ICE(L) (mA) 10 10 2 10 3 10 –2 10 –1 V CE = 10V Ta = 25˚C T = 2856K Spectral sensitivity characteristics 100 Wavelength λ (nm) Relative sensitivity S (%) 400 600 800 1000 1200 200 V CE = 10V Ta = 25˚C V CE = 10V T = 2856K ICE(L) — Ta 10 2 Ambient temperature Ta (˚C ) – 40 0 40 80 120 10 –1 Collector photo current ICE(L) (mA) ICEO — Ta 10 2 10 –1 Ambient temperature Ta (˚C ) V CE = 10V Dark current ICEO (µA) 10 –2 – 20 0 40 80 20 60 100 tr — ICE(L) Collector photo current ICE(L) (mA) Rise time tr (µs) V CC = 10V Ta = 25˚C10 3 10 2 10 –1 10 –1 10 10 21 10 –2 10 –2 tf — ICE(L) Collector photo current ICE(L) (mA) Fall time tf (µs) V CC = 10V Ta = 25˚C10 3 10 2 10 –1 10 –1 10 10 21 10 –2 10 –2 0˚ 10˚ 20˚ 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ Directivity characteristics 100 Relative sensitivity S (%) R L = 1kΩ 500Ω 100Ω R L = 1kΩ 500Ω 100Ω L = 100 lx 10 lx 50 lx 100 lx L =250 lx
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