PMST3904

PMST3904 NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Supersedes data of 1999 Apr 22

2004 Jan 21

2004 Jan 21 2

NXP Semiconductors Product data sheet NPN switching transistor PMST3904

FEATURES

• Collector current capability IC = 200 mA
• Collector-emitter voltage VCEO = 40 V.

APPLICATIONS

• General amplification and switching.

DESCRIPTION

NPN switching transistor in a SOT323 plastic package. PNP complement: PMST3906. MARKING Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE(1) PMST3904 ∗1A SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 40 V IC collector current (DC) 200 mA PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT323) and symbol. handbook, halfpage MAM062 Top view

ORDERING INFORMATION

PMST3904 − plastic surface mounted package; 3 leads SOT323

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NXP Semiconductors Product data sheet NPN switching transistor PMST3904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 200 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 625 K/W

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NXP Semiconductors Product data sheet NPN switching transistor PMST3904 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; see Fig.2; note 1 IC = 0.1 mA 60 − IC = 1 mA 80 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = Ic = 0; VBE = 500 mV; f = 1 MHz − 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 5 dB Switching times (between 10% and 90% levels); see Fig.7 td delay time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − 35 ns tr rise time − 35 ns ts storage time − 200 ns tf fall time − 50 ns

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NXP Semiconductors Product data sheet NPN switching transistor PMST3904 handbook, halfpage MGU821 hFE 100 200 400 300 500 IC (mA) 10−1 11 0 1 0 2 103 (1) (2) (3) Fig.2 DC current gain; typical values. VCE = 1 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. Fig.3 Collector current as a function of collector-emitter voltage. (1) I B = 5 mA. (2) I B = 4.5 mA. (3) I B = 4 mA. (4) I B = 3.5 mA. (5) I B = 3 mA. (6) I B = 2.5 mA. (7) I B = 2 mA. (8) I B = 1.5 mA. (9) I B = 1 mA. (10) IB = 0.5 mA. handbook, halfpage IC (mA) 06 28 1 0 VCE (V) 250 150 200 100 MGU822 (8) (9) (10) Tamb = 25 °C. handbook, halfpage MGU823 VBE (mV) 400 200 600 1000 800 1200 IC (mA) 10−1 11 0 1 0 2 103 (1) (2) (3) Fig.4 Base-emitter voltage as a function of collector current. VCE = 1 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage MGU824 VBEsat (mV) 600 1000 400 200 800 1200 IC (mA) 10−1 11 0 1 0 2 103 (1) (2) (3) Fig.5 Base-emitter saturation voltage as a function of collector current. IC/IB = 10. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C.

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NXP Semiconductors Product data sheet NPN switching transistor PMST3904 handbook, halfpage MGU825 103 VCEsat (mV) 102 IC (mA) 10−1 11 0 102 103 (1) (2) (3) Fig.6 Collector-emitter saturation voltage as a function of collector current. IC/IB = 10. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, full pagewidth RC DUT MLB826 Vo RB (probe) 450 Ω (probe) 450 Ωoscilloscope oscilloscope VBB Vi VCC Fig.7 Test circuit for switching times. Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = −1.9 V; VCC = 3 V. Oscilloscope: input impedance Zi = 50 Ω.

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NXP Semiconductors Product data sheet NPN switching transistor PMST3904 PACKAGE OUTLINE UNIT max bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c HE E v M A AB y 0 1 2 mm scale A X Plastic surface-mounted package; 3 leads SOT32 3 04-11-04 06-03-16

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NXP Semiconductors Product data sheet NPN switching transistor PMST3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Printed in The Netherlands R75/04/pp9 Date of release: 2004 Jan 21 Document order number: 9397 750 12537