PMGD290XN NEXPERIA | Alldatasheet
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Dual N-channelµTrenchMOS™ extremely low level FET Rev. 01 — 26 February 2004 Product dataMBD128 1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
- Pinning information ■ Surface mounted package ■ Footprint 40% smaller than SOT23 ■ Dual device ■ Fast switching ■ Low on-state resistance ■ Low threshold voltage. ■ Driver circuits ■ Switching in portable appliances. ■ VDS ≤ 20 V ■ ID ≤ 0.86 A ■ Ptot≤ 0.41 W ■ R DSon ≤ 350 mΩ . Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description Simplified outline Symbol 1 source (s1) SOT363 (SC-88) 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) 6 drain (d1) MSA370 123 654 Top view g1 s2 MSD901
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 2 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 3. Ordering information 4. Limiting values [1] Single device conducting. Table 2: Ordering information Type number Package Name Description Version PMGD290XN SC-88 Plastic surface mounted package; 6 leads SOT363 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS =2 0kΩ -2 0 V VGS gate-source voltage (DC) - ±12 V ID drain current (DC) T sp =2 5°C; VGS = 4.5 V;Figure 2and 3 [1] - 0.86 A Tsp = 100°C; VGS = 4.5 V;Figure 2 [1] - 0.54 A IDM peak drain current T sp =2 5°C; pulsed; tp ≤ 10 µs;Figure 3 [1] - 1.72 A Ptot total power dissipation T sp =2 5°C; Figure 1 - 0.41 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode I S source (diode forward) current (DC) Tsp =2 5°C [1] - 0.34 A ISM peak source (diode forward) current Tsp =2 5°C; pulsed; tp ≤ 10 µs [1] - 0.69 A
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 3 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp =2 5°C; IDM is single pulse; VGS = 4.5 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa17 120 0 50 100 150 200 (%) Tsp (°C) Pder 03aa25 120 0 50 100 150 200 Tsp (°C) Ider (%) P der P tot P tot 25 C°() ID I D2 5C°() 03an14 10-2 10-1 10-1 1 10 10 2 VDS (V) ID (A) DC 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µ s 100 ms 100 µ s
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 4 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to solder pointFigure 4 - - 300 K/W Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 03an28 102 103 10-4 10-3 10-2 10-1 1 10 tp (s) Zth(j-sp) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t Tδ =
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 6 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Tj=2 5°CT j=2 5°C and 150°C; VDS > ID xR DSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj=2 5°C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03am96 0.5 1.5 2.5 0 0.5 1 1.5 2 VDS (V) ID (A) 4.5 V 3 V 2.5 V 2 V VGS = 1.8 V 3.5 V 03am98 0.5 1.5 2.5
012345 VGS (V)
(A) VDS > ID x RDSon Tj = 150 °C25 °C 03am97 0.2 0.4 0.6 0.8 00 . 511 . 522 . 5 ID (A) R DSon (Ω ) 4.5 V 3 V 3.5 V VGS = 2.5 V 03af18 0.5 1.5 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 C°()
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 7 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ID = 0.25 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03al82 0.5 1.5 -60 0 60 120 180 Tj (°C) VGS(th) (V) min max typ 03an65 10-6 10-5 10-4 10-3 0 0.4 0.8 1.2 1.6 VGS (V) ID (A) min maxtyp 03an00 102 10-1 1 10 10 2 VDS (V) C (pF) C iss C oss C rss
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 8 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Tj=2 5°C and 150°C; VGS =0V I D = 1 A; VDD =1 0V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03am99 0.2 0.4 0.6 0.8 0 0.3 0.6 0.9 1.2 VSD (V) IS (A) Tj = 25 °C150 °C VGS = 0 V 03an01 0 0.2 0.4 0.6 0.8 Q G (nC) VGS (V) ID = 1 A Tj = 25 °C VDD = 10 V
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 9 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 7. Package outline Fig 14. SOT363 (SC-88). REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT363 SC-88 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET Product data Rev. 01 — 26 February 2004 10 of 12 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 8. Soldering 9. Revision history Dimensions in mm. Fig 15. Reflow soldering footprint for SOT363 (SC-88). Table 6: Revision history Rev Date CPCN Description 01 20040226 - Product data (9397 750 12762). MSA432 solder lands solder resist occupied area solder paste 1.20 2.40 0.50 (4·) 0.40 (2·) 0.90 2.10 0.50 (4·) 0.60 (2·) 2.35 2.65
Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 — 26 February 2004 11 of 12 9397 750 12762 Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 — 26 February 2004 11 of 12 Contact information For additional information, please visithttp://www.semiconductors.philips.com. 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 February 2004 Document order number: 9397 750 12762
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Philips Semiconductors PMGD290XN Dual N-channelµTrenchMOS™ extremely low level FET