PMDPB95XNE NEXPERIA | Alldatasheet
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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
30 V dual N-channel Trench MOSFET
26 September 2012 Product data sheet
1.1 General description
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
- Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
- Exposed drain pad for excellent thermal conduction
- ESD protection up to 1.8 kV
1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Table 2. Pinning information
1 S1 source TR1
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR1
7 D1 drain TR1
8 D2 drain TR2
Table 3. Ordering information Table 4. Marking codes Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 3 / 13 Symbol Parameter Conditions Min Max Unit [2] - 475 mWTamb = 25 °C [1] - 1.1 W Ptot total power dissipation Tsp = 25 °C - 6.25 W Source-drain diode IS source current Tamb = 25 °C - 1.1 A Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C ESD maximum rating VESD electrostatic discharge voltage HBM [3] - 1800 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. Tj (°C) - 75 17512525 75- 25 017aaa123 120 Pder (%) Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) - 75 17512525 75- 25 017aaa124 120 Ider (%) Fig. 2. Normalized continuous drain current as a function of junction temperature
Table 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 7. Characteristics
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 6 / 13 Symbol Parameter Conditions Min Typ Max Unit VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; ID = 2 A; Tj = 25 °C - 95 120 mΩ VGS = 4.5 V; ID = 2 A; Tj = 150 °C - 155 200 mΩ RDSon drain-source on-state resistance VGS = 2.5 V; ID = 0.5 A; Tj = 25 °C - 130 165 mΩ gfs forward transconductance VDS = 10 V; ID = 2 A; Tj = 25 °C - 11 - S Dynamic characteristics (per transistor) QG(tot) total gate charge - 1.65 2.5 nC QGS gate-source charge - 0.22 - nC QGD gate-drain charge VDS = 15 V; ID = 2 A; VGS = 4.5 V; Tj = 25 °C - 0.45 - nC Ciss input capacitance - 143 - pF Coss output capacitance - 43 - pF Crss reverse transfer capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 30 - pF td(on) turn-on delay time - 6 - ns tr rise time - 11 - ns td(off) turn-off delay time - 18 - ns tf fall time VDS = 15 V; ID = 2 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 6 - ns Source-drain diode (per transistor) VSD source-drain voltage IS = 0.7 A; VGS = 0 V; Tj = 25 °C - 0.75 1.2 V VDS (V) 0 431 2 aaa-005110 ID (A) VGS = 1.9 V 4.5 V 3.1 V 2.5 V 2.2 V 2.8 V Tj = 25 °C Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-005111 VGS (V) 0.0 1.51.00.5 10-4 10-5 10-3 ID (A) 10-6 min typ max Tamb = 25 °C; VDS = 5 V Fig. 7. Subthreshold drain current as a function of gate-source voltage
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 7 / 13 ID (A) 0 1084 62 aaa-005112 0.2 0.1 0.3 0.4 RDSon (Ω) 0.0 VGS = 4.5 V 1.9 V 2.2 V 2.5 V 2.8 V 3.1 V Tj = 25 °C Fig. 8. Drain-source on-state resistance as a function of drain current; typical values VGS (V) 0 542 31 aaa-005113 0.2 0.1 0.3 0.4 RDSon (Ω) 0.0 Tj = 25 °C Tj = 150 °C ID = 2.2 A Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-005114 VGS (V) 0 321 ID (A) Tj = 25 °CTj = 150 °C Tj = 25 °C Tj = 150 °C VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Tj (°C) -60 1801200 60 aaa-005115 1.0 0.5 1.5 2.0 a 0.0 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 8 / 13 Tj (°C) -60 1801200 60 aaa-005116 1.0 0.5 1.5 2.0 VGS(th) (V) 0.0 min typ max ID = 0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature VDS (V) 10-1 102101 aaa-005117 102 103 C (pF) Ciss Coss Crss f = 1 MHz; VGS = 0 V Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values QG (nC) aaa-005118 VGS (V) ID = 2 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa137 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. Gate charge waveform definitions
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 9 / 13 aaa-005119 VSD (V) 0.0 1.20.80.4 IS (A) Tj = 25 °CTj = 150 °C VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t 006aaa812 duty cycle δ = Fig. 17. Duty cycle definition 9. Package outline 10-05-31Dimensions in mm 0.04 max 0.65 max 0.77 0.57 (2×) 0.54 0.44 (2×) 2.1 1.9 2.1 1.9 1.1 0.9 0.3 0.2 0.65 (4×) 0.35 0.25 (6×) 1 6 Fig. 18. Package outline DFN2020-6 (SOT1118)
Table 8. Revision history
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 11 / 13 12. Legal information
12.1 Data sheet status
status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.
NXP Semiconductors PMDPB95XNE PMDPB95XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 26 September 2012 13 / 13 13. Contents © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 September 2012