PMD18K100 SEME-LAB | Alldatasheet

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Technical content

Prelim. 10/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. NPN DARLINGTON POWER TRANSISTOR

FEATURES

  • TO3 PACKAGE  100V  60A PEAK  240 WATTS V CBO Collector – Base Voltage (Open Emitter) VCEO Collector – Emitter Voltage (Open Base) VEBO Emitter – Base Voltage (Open Collector) IC Collector Current Continuous Peak IB Base Current PD Total Power Dissipation at Tcase= 50°C TJ,TSTG Operating Junction and Storage Temperature /G71 JC Thermal Resistance MECHANICAL DATA Dimensions in mm ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Case is collector. BE 4.2 26.6 max. 39.5 max. 30.1 16.9 10.9 2.5 /G31/G2e /G30 12.8 20.3 max. 9.0 max.

DESCRIPTION

The PMD18K100 is an NPN Darlington Power Transistor in a hermetic TO3 package. The device is a monolothic epitaxial structure with built in base-emitter shunt resistor 100V 100V 30A 60A 0.75A 240W -65 to +200 0.625°C/W

Prelim. 10/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. ELECTRICAL CHARACTERISTICS (TJ = 0 to 200°C, unless otherwise stated) Collector - Emitter Saturation Voltage* Base - Emitter Turn-on Voltage* Base - Emitter Saturation* DC Current Gain* Forward Bias Secondary Breakdown Current Collector Emitter Breakdown Voltage (Base Open)* Collector Emitter Sustaining Voltage* Emitter Base Leakage Current Collector Emitter Leakage Current Output Capacitance Small Signal Current Gain Common Emitter Short Circuit Forward Transfer Ratio I C = 15A I B = 60mA IC = 15A V CE = 3V IC = 15A I B = 60mA IC = 15A V CE = 3V Tj= 25°C VCE = 30V T A = 25°C 1 sec non-repetitive pulse ICE = 100mA T j= 25°C ICE = 100mA R BE = 2.2K/G57 VEB = 5V I C = 0A VCE = 67V R BE = 2.2K/G57 VCB = 10V I E = /G30 A f = 1MHz T j= 25°C IC = /G39 AV CE = 3V f = 1KHz T j= 25°C IC = /G39 AV CE = 3V f = 1MHz T j= 25°C 2.8 2.8 1000 20000 8.0 100 100 3.0 10.0 600 300 V V V A V V mA mA pF * Pulse Tested with pulse width /GA3 300/G6D s, and duty cycle < 2% Parameter Test Conditions Min. Typ. Max. Units VCE(sat) VBE(on) VBE(sat) hFE Is/b V(BR)CEO V(SUS)CER IEBO ICER C ob hfe hfe OFF CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS