PMD18K100

PMD18K CENTRAL | Alldatasheet

Document overview

• Manufacturer or author: Central Semiconductor Corp.
• PDF pages: 2

Technical content

MAXIMUM RATINGS: (TC=25°C) SYMBOL PMD19K80 PMD19K100 UNITS Collector-Base Voltage V CBO 80 100 V Collector-Emitter Voltage V CER 80 100 V Collector-Emitter Voltage V CEO 80 100 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 30 A Peak Collector Current I CM 60 A Continuous Base Current I B 750 mA Power Dissipation (TC=50°C) P D 240 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance JC 0.625 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICER V CE=54V, RBE=2.2kΩ (PMD18K, 19K80) 10 mA ICER V CE=67V, RBE=2.2kΩ (PMD18K, 19K100) 10 mA IEBO V EB=5.0V 3.0 mA BVCER I C=100mA, RBE=2.2kΩ (PMD18K, 19K80) 80 V BVCER I C=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100 V BVCEO I C=100mA (PMD18K, 19K80) 80 V BVCEO I C=100mA (PMD18K, 19K100) 100 V VCE(SAT) I C=15A, IB=60mA 2.0 V VBE(SAT) I C=15A, IB=60mA 2.8 V VBE(ON) V CE=3.0V, IC=15A 2.8 V hFE V CE=3.0V, IC=15A (PMD18K series) 1.0K 20K hFE V CE=3.0V, IC=15A (PMD19K series) 800 20K hfe V CE=3.0V, IC=9.0A, f=1.0kHz 300 fT V CE=3.0V, IC=9.0A, f=1.0MHz 4.0 MHz Cob V CB=10V, IE=0, f=1.0MHz 600 pF PMD18K SERIES NPN PMD19K SERIES PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD18K, PMD19K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for power switching applications. These devices are designed to be electrical/mechanical equivalents to Lambda part numbers. MARKING: FULL PART NUMBER TO-3 CASE R1 (2-October 2012) www.centralsemi.com

TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER www.centralsemi.com R1 (2-October 2012)