PMD18D100 NJSEMI | Alldatasheet
Document overview
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 PMD18D100 MECHANICAL DATA Dimensions in mm NPN DARLINGTON POWER TRANSISTOR *....* L Case is collector.
FEATURES
- TO3 PACKAGE
- 100V
- 100APEAK
- 300 WATTS
DESCRIPTION
The PMD18D100 is an NPN Darlington Power Transistor in a hermetic TO3 package. The device is a monolothic epitaxial structure with built in base-emitter shunt resistor ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO Ic IB PD Tj,TSTG 9JC Collector - Base Voltage (Open Emitter) Collector - Emitter Voltage (Open Base) Emitter - Base Voltage (Open Collector) Collector Current Continuous Peak Base Current Total Power Dissipation at Tcase= 50°C Operating Junction and Storage Temperature Thermal Resistance 100V 100V 50A 100A 1.5A 300W -65 to 200°C 0.4°C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tj = 0 to 200°C, unless otherwise stated) Parameter Test Conditions Win. Typ. Max. Units ON CHARACTERISTICS Collector - Emitter CE(sat) saturation Voltage* Base - Emitter Turn-on VBE<on> Voltage* vBE(sat) Base ' Emitter Saturation* hFE DC Current Gain* Forward Bias Secondary Q/h &/u Breakdown Current C = 30A IB = 120mA lc = 30A VCE = 3V IC = 30A IB = 120mA lc = 30A VrE = 3V Tj = 25°C VCE = 30V TA = 25°C 1 sec non-repetitive pulse 2.8 2.8 1000 20000 10.0 V V V A OFF CHARACTERISTICS Collector Emitter Breakdown (BR)CEO Vo|tage (Bgse open)* Collector Emitter Sustaining V(SUS)CER Vo|tage. Emitter Base Leakage PRO EBO Current Collector Emitter Leakage CER Current ICE= 100mA Tj-25°C ICE= 100mA RBE = 2.2Kii VEB = 5V lc = OA VCE = 67V RBE = 2.2KQ 100 100 6.0 15.0 V V rriA mA DYNAMIC CHARACTERISTICS Cob Output Capacitance hfe Small Signal Current Gain Common Emitter Short hfe, Circuit Forward Transfer Ratio VCB=10V IE = OA f = 1 MHz TJ = 25°C IC=18A VCE = 3V f = 1 KHz Tj = 25°C lc = ISA VCE = 3V f=1MHz T, = 25°C J 1200 300 pF * Pulse Tested with pulse width < 300us, and duty cycle < 2%