PMD16K80 NJSEMI | Alldatasheet

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Technical content

, U na, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD16K80

DESCRIPTION

  • High DC current gain
  • Collector-Emitter Sustaining Voltage- VcEO(sus)= SOV(Min)
  • Complement to type PMD17K80

APPLICATIONS

  • Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25'C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 5.0 0.5 200 150 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.875 UNIT 'C/W "* \\j TW — — «w- PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package , I r "-N-*! t ! 1 1 r IE — IU-D K— U — H V^ h-L-~l t V DIM A B C D E G H L N g u V ""1^\\ ^s JPL r / • % < -BH nun MN MAX 39XM5 2530 7.80 0.90 1.40 36 £7 8.30 1 10 160 10.92 546 11.40 1675 19.40 4.00 30.00 430 13.50 [17fl5 1962 420 3020 433 r -BH t t ; B NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Darlingtion Power Transistor PMD16K80

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(sat) VsE(on) ICER IEBO hpE fi COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Emitter Cut-off current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS lc= 100mA; IB=0 lc= 10A; !B=40mA lc=10A;lB=40mA lc=10A;VCE=3V VCE=80V;RBE=1KQ VCE= 80V; RBE=1 K a , TC=150'C VEB= 5V; lc= 0 lc=10A;VCE=3V lc= 7A; VCE= 3V, f= 1 kHz IE= 0 ; VCB= 10V; ftest= 1.0MHz MIN 1000 MAX 2.0 2.8 2.8 1.0 5.0 2.0 20000 400 UNIT V V V V mA mA MHz PF