PMD16K CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Central Semiconductor Corp.
- PDF pages: 2
Technical content
PMD16K60 PMD16K80 PMD16K100 MAXIMUM RATINGS: (TC=25°C) SYMBOL PMD17K60 PMD17K80 PMD17K100 UNITS Collector-Base Voltage V CBO 60 80 100 V Collector-Emitter Voltage V CEO 60 80 100 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 20 A Peak Collector Current I CM 40 A Continuous Base Current I B 500 mA Power Dissipation P D 200 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance JC 0.875 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICER V CE=Rated VCEO, RBE=1.0kΩ 1.0 mA ICER V CE=Rated VCEO, RBE=1.0kΩ, TC=150°C 5.0 mA IEBO V EB=5.0V 2.0 mA BVCEO I C=100mA (PMD16K60, 17K60) 60 V BVCEO I C=100mA (PMD16K80, 17K80) 80 V BVCEO I C=100mA (PMD16K100, 17K100) 100 V VCE(SAT) I C=10A, IB=40mA 2.0 V VBE(SAT) I C=10A, IB=40mA 2.8 V VBE(ON) V CE=3.0V, IC=10A 2.8 V hFE V CE=3.0V, IC=10A (PMD16K series) 1.0K 20K hFE V CE=3.0V, IC=10A (PMD17K series) 800 20K hfe V CE=3.0V, IC=7.0A, f=1.0kHz 300 fT V CE=3.0V, IC=7.0A, f=1.0MHz 4.0 MHz Cob V CB=10V, IE=0, f=1.0MHz 400 pF PMD16K SERIES NPN PMD17K SERIES PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications. MARKING: FULL PART NUMBER TO-3 CASE R1 (26-November 2012) www.centralsemi.com
TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER www.centralsemi.com R1 (26-November 2012)