PMD16K60 NJSEMI | Alldatasheet
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Technical content
^Eini-Conductoi ^Products., One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD16K60
DESCRIPTION
- High DC current gain
- Collector-Emitter Sustaining Voltage- VcEO<sus)= 60V(Min)
- Complement to type PMD17K60
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25°C) SYMBOL VCBO VGEO VEBO . Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25'C Junction Temperature Storage Temperature VALUE 5.0 0.5 200 150 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.875 UNIT
- c/w L-ssv — *-JW- PIN l.BASE 2, EMITTER 3. COLLECT OR (CASE) TO-3 package I r-N-i i 1 1 t_E C -4U-D ici v~, r~£~s A V DIM B C D g H K L H Q U V "T^X -|— ^ ^- ff^^
- BED / i 9 c i nun MW VIM 3900 2530 780 090 1.40 26 «7 8.30 1.10 1,60 1092 546 11.40 16.75 1940 4.00 30.00 430 1350 17.05 1962 420 3030 4,50 LK SB t T > B NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlingtion Power Transistor PMD16K60
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) VeE(on) ICER IEBO HFE fi COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Emitter Cut-off current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 100mA; IB= 0 lc= 10A; lB=40mA lc=10A; lB=40mA lc=10A;VCE=3V VCE=60V;RBE=1KQ VOE= 60V; RBE=1KQ , Tc=150"C VEB= 5V; lc= 0 lc=10A;VCE=3V lc= 7A; VCE= 3V, f= 1kHz IE= 0; VCB= 10V; ftest= 1 0MHz MIN 1000 MAX 2.0 2.8 2.8 1.0 5.0 2.0 20000 400 UNIT V V V V mA mA MHz PF