PMD16K100 NJSEMI | Alldatasheet
Document overview
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Technical content
<^£.mL-dondu.ctoi ^Pi ., {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD16K100
DESCRIPTION
- High DC current gain
- Collector-Emitter Sustaining Voltage- VCEO(susr 100V(Min)
- Complement to type PMD17K100
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25°C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 100 100 5.0 0.5 200 150 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rthj-c PARAMETER ThermalResistance, Junction to Case MAX 0.875 UNIT °c/w t £5 — "IV J "* pK — *W — -w- <•;: PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package 1* N ' *| t i. — — I I — I c t -*{U-D |*-L-* X T-\\K \\ PL r / i ^7^-^ c ow A B c D E a H L N g U V ^ ^S -L^J J inni MM ItXt 3300 2530 7.80 0.90 t 4(1 38 «7 8.30 1.10 t.60 1092 54S 11.40 16.75 19.40 4.00 3000 430 13.50 1705 1962 420 3020 450 i 13B t t ; B
- 1 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlingtion Power Transistor PMD16K100
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(sat) VsE(on) ICER IEBO HFE fy COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Emitter Cut-off current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=100mA;lB=0 lc= 10A; lB=40mA lc= 10A; lB=40mA IC=10A;VCE=3V VCE=100V;RBE=1KQ VCE= 100V; RBE=1KQ, TC=150'C VEB= 5V; lc= 0 lc=10A;VCE=3V lc= 7A; VCE= 3V, f= 1 kHz le= 0; VCB= 10V; ftest= 1.0MHz MIN 100 1000 MAX 2.0 2.8 2.8 1.0 5.0 2.0 20000 400 UNIT V V V V mA mA MHz PF