PMD11K100 NJSEMI | Alldatasheet
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^s-mi-dondiLctoi iJ-*redacts., Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD11K100 PNP POWER DARLINGTON ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage Collector Base Voltage Emitter Base Voltaoe Collector Current Continuous Peak Base Current Thermal Resistance Total Internal Power Dissipation @ Tc = 50°C1 Operating Junction and Storage Temperature SYMBOL VCFO Veto VEBO Ic IB eJC PD Tj TSTG MAXIMUM 100 100 0.2 1.0 150 -65 to +200 UNITS Vdc Vdc Vdc Adc Adc "C/Watt Watts " For operation above Tc = 50°C, derate <g 1.0 W/°C. NOTES
1 DIMENSIONING AND TOLEHANCING PER ANSI
V145M, 1982. I CONTROtUNG DIMENSION INCH 3AURUIESAND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLT. i MUMETERS OMI MN MAX A ! - 38,37 I - !1M c : *35 sjs D 1 097 109 E : 1.40 '77 F 30.15 BSC G 1092 BSC H 5 46 BSC J 16 89 BSC K 1118 '219 Q 384 119 II - 2667 j U 483 533 VI 3.84 , 419 MOCS MM 023) 0038 0056 MAX J 15SO 1 0830 1 0315 1 0043 1 0070 1 1 187 flSC 0430 6SC 0 215 BSC DECS BSC 0440 0151 0190 3151 0480 1 016S | 1050 | 0.210 | 0.165 1 TO-204AA (TO-3) STYLE 1: HN1. BASE 2. EMITTER CASE COUEaOR NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
All parameters are guaranteed at T, = 0 to 200°C, unless otherwise specified. Parameter Symbol ON CHARACTERISTICS Collector Emitter Saturation Voltage1 Base Emitter Turn-on Voltage1 Base Emitter Saturation1 DC Current Gain1 VcE(sat) VBE(OH) VBE(MI) hFE Test Conditions Minimum Maximum Units lc = 6 Adc; IB = 24 mAdc lc = 6 Adc; VCE = 3 Vdc lc = 6 Adc; IB = 24 mAdc lc = 6 Adc; VCE = 3 Vdc L = 25°C 800 2.0 2.8 2.8 20,000 Vdc Vdc Vdc OFF CHARACTERISTICS Forward Bias Secondary Breakdown Current Collector Emitter Breakdown Voltage1 (Base Onen) Collector Emitter Sustaining Voltage1 Emitter Base Leakage Current Collector Emitter Leakage Current Is/b V(BR)CEO V(BR)CEO IEBO ICER VCE = 30 Vdc; TA = 25°C 1 sec non-repetitive pulse ICE = 100 mAdc; Tj = 25°C ICE = 100 mAdc; RBE = 2,2kn VEB = 5 Vdc; lc = OA VCE = 67 Vdc; RBE = 2.2W1 5.0 100 100 3.0 5.0 Adc Vdc Vdc mAdc mAdc DYNAMIC CHARACTERISTICS Output Capacitance Small Signal Current Gain Common Emitter Short Circuit Forward Transfer Ratio cob h,e hi. VCB = 10 Vdc; IE = 0 Adc f = 1 MHz; Tj = 25°C lc = 5 Adc; VCE = 3 Vdc f = 1 kHz; Tj = 25°C lc = 5 Adc; VCE = 3 Vdc f = 1 MHz; L = 25°C 300 300 PF (1) Pulse tested with pulse width ' 300 M-S and duty cycle s 2.0%.