PMD10K80 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
£/-'10ducts., Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD10K80
DESCRIPTION
- High DC current gain
- Collector-Emitter Sustaining Voltage- VCEO(SUS)= SOV(Min)
- Complement to type PMD11K80
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25°C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25"C Junction Temperature Storage Temperature VALUE 5.0 0.2 150 150 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 1.17 UNIT r/w PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package f-N-1 I I DW A B c D E G H R L H g u V iran MM MAX 3900 25.30 7.80 0.90 1.40 26*7 8.30 1.10 1.60 10.92 546 1140 16.75 19.40 4.00 30.00 4.30 13.50 1705 19.62 420 3020 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlingtion Power Transistor PMD10K80
ELECTRICAL CHARACTERISTICS
10=25^0 unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) Vee{sat) VBE(OII) ICER IEBO hFE fi COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Emitter Cut-off current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=100mA;lB=0 lc= 6A; IB= 24mA lc= 6A; IB= 24mA lc= 6A; VCE= 3V VCE= 80V; RBE= 1 K Q VCE= 80V; RBE= 1 K Q , Tc=1 50"C VEB= 5V; lc= 0 lc= 6A; VCE= 3V lc= 5A; VCE= 3V, f= 1kHz IE= 0; VCB= 10V; ftest= 1.0MHz MIN 1000 MAX 2.0 2.8 2.8 1.0 5.0 2.0 20000 300 UNIT V V V V mA mA MHz pF