PMD10K60 NJSEMI | Alldatasheet

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Technical content

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD10K60

DESCRIPTION

  • High DC current gain
  • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min)
  • Complement to type PMD11K60

APPLICATIONS

  • Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25'C) THERMAL CHARACTERISTICS SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 5.0 0.2 150 150 -65-200 UNIT V V V A A A W SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 1.17 UNIT r/w PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package DW A B c D E H K L N q u V rani MM 39J 25,30 7.80 0.90 1 40 MAX DO 26*7 6.30 1.10 1.60 10.92 54S 11.40 16.75 19,40 400 3CXU 4.30 13.50 17XJ5 19.62 420 3020 430 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders Quality Semi-Conductors

Silicon NPN Darlingtion Power Transistor PMD10K60

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) vCE(sat) VsE(sat) VBE(OH) ICER IEBO hFE fr COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Emitter Cut-off current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=100mA;lB=0 lc= 6A; IB= 24mA lc= 6A; IB= 24mA lc= 6A; VCE= 3V VCE= 60V; RBE= 1 K 0 VCE= 60V; RBE= 1 K Q , Tc=1 50 °C VEB= 5V; lc= 0 lc= 6A; VCE= 3V lc= 5A; VCE= 3V, f= 1kHz IE= 0; VCB= 10V; f,est= 1.0MHz MIN 1000 MAX 2.0 2.8 2.8 1.0 5.0 2.0 20000 300 UNIT V V V V mA mA MHz PF