PMD10K100 NJSEMI | Alldatasheet

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Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD10K100

DESCRIPTION

  • High DC current gain
  • Collector-Emitter Sustaining Voltage- VCEO(sus)=100V(Min)
  • Complement to type PMD11K100

APPLICATIONS

  • Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25°C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25'C Junction Temperature Storage Temperature VALUE 100 100 5.0 0.2 150 150 -65-200 UNIT V V V A A A W gc THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 1.17 UNIT
  • c/w R1 R2 PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package DIM A B c D E H ft L H g u V nun UN I MAX 3900 25.30 7.80 0.90 1 40 26 £7 8.30 1 10 160 1052 548 11.40 16.75 19.40 4.00 30M 4.30 13.50 17.05 19.62 420 3020 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Darlingtion Power Transistor PMD10K100

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(sat) VBEJOR) ICER IEBO hFE fr COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Emitter Cut-off current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 100mA; IB= 0 lc= 6A; IB= 24mA lc= 6A; IB= 24mA lc= 6A; VC6= 3V VCE=100V;RBe=1KQ VCE= 1 00V; RBe= 1 K Q , Tc=1 50"C VEB= 5V; lc= 0 lc= 6A; VOE= 3V lc= 5A; VCE= 3V, f= 1kHz lE=0;VCB=10V;ftest= 1.0MHz MIN 100 1000 MAX 2.0 2.8 2.8 1.0 5.0 2.0 20000 300 UNIT V V V V mA mA MHz PF