PMBF170

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PMBF170 NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

N-channel enhancement mode ﬁeld-effect transistor Rev. 03 — 23 June 2000 Product speciﬁcation c c 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ 1 technology. Product availability: PMBF170 in SOT23. 2. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. 3. Applications ■ Relay driver ■ High speed line driver ■ Logic level translator. 4. Pinning information 1. TrenchMOS is a trademark of Royal Philips Electronics. Table 1: Pinning - SOT23, simpliﬁed outline and symbol Pin Description Simpliﬁed outline Symbol 1 gate (g) SOT23 N-channel MOSFET 2 source (s) 3 drain (d) 03ab44 d g s 03ab30

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 3 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. VGS ≥ 4.5 V Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp =2 5°C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa17 100 120 0 25 50 75 100 125 150 175 Pder Tsp (oC) (%) 03aa25 100 120 0 25 50 75 100 125 150 175 Ider (%) Tsp (oC) P der P tot P tot 25 C°() Ider ID I D2 5C°() 03aa03 10-2 10-1 11 0 1 0 2VDS (V) ID (A) D.C. 100 ms 10 ms R DSon = VDS / ID 1 ms tp = 10 µs 100 µs Tsp = 25oC tp tp T P t Tδ =

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 4 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. 7. Thermal characteristics

7.1 Transient thermal impedance

Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4

150 K/W

R th(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint

350 K/W

Mounted on metal clad substrate. Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 03aa01 10-1 102 103 tp (s) Zth(j-sp) K/W single pulse 0.2 0.1 0.05 0.02 δ = 0.5 tp tp T P t Tδ = 10-410-5 10-3 10-2 10-1 11 0

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 6 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. Tj=2 5°CT j=2 5°C and 150°C; VDS ≥ ID × R DSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj=2 5°C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03aa04 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 2 3.5 V Tj = 25oC 4 V 4.5 V 3 V VDS (V) ID (A) VGS = 10 V 03aa06 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 01234567 VDS > ID X RDSon Tj = 25oC 150oC ID (A) VGS (V) 03aa05 Tj = 25oC 4.5 V 4 V 3.5V3 VR DSon (Ω ) VGS = 10 V ID (A) 03aa28 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -60 -20 20 60 100 140 180 Tj (oC) a a R DSon R DSon 25 C°()

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 7 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. ID = 1 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj=2 5°C and 150°C; VDS ≥ ID × R DSon VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa34 0.5 1.5 2.5 -60 -20 20 60 100 140 180 typ min VGS(th) (V) Tj (oC) 03aa37 0 0.5 1 1.5 2 2.5 3 typmin ID(A) VGS (V) 10-6 10-5 10-4 10-3 10-2 10-1 03aa07 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 Tj = 25oC 150oC VDS > ID X RDSongfs (S) ID (A) 03aa09 102 10-1 11 0 1 0 2 C iss C oss C rss C iss, Coss C rss (pF) VDS (V)

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 8 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. Tj=2 5°C and 150°C; VGS =0V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 03aa08 0.2 0.4 0.6 0.8 Tj = 25oC 150oC VGS = 0 VIS (A) VSD (V)

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 9 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. 9. Package outline Fig 14. SOT23. UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 10 of 13 9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved. 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000622 HZG303 Product speciﬁcation; third version; supersedes PMBF170_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970623 - Product speciﬁcation; second version. 01 19901031 - Product speciﬁcation; initial version.

Philips Semiconductors PMBF170 N-channel enhancement mode ﬁeld-effect transistor Product speciﬁcation Rev. 03 — 23 June 2000 11 of 13 9397 750 07208 © Philips Electronics N.V. 2000 All rights reserved. 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition —Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information —Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. Datasheet status Product status Deﬁnition[1] Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for product development. Speciﬁcation may change in any manner without notice. Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

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© Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2000 Document order number: 9397 750 07208

PMBF170 specifications and overview.

Summary

N-channel enhancement mode field-effect transistor Rev. 03 - 23 June 2000

Description