PMB772 PMC | Alldatasheet
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PNP SILICON POWER TRANSISTOR …designed for output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. MAXIMUM RATINGS (Ta = 25 °C) *Pulse Test PW ≤ 350µs, Duty Cycle ≤ 2% Characteristic Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -30 V Emitter Base Voltage VEBO -5 V Collector Current (DC) IC(DC) -3 A Collector Current (Pulse) IC(Pulse)* -7 A Total Power Dissipation Ta=25°C Tc=25°C Ptot W Storage Temperature Tstg -55 ~ 150 °C Junction Temperature Tj 150 °C 1 : Emitter 2 : Collector 3 : Base Unit in mm TO-126 Weight: 0.85g ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Pulse Test: PW ≤ 350µs, Duty Cycle ≤ 2% Classification of hFE(2) Class R Q P E hFE(2) 60 to 120 100 to 200 160 to 320 200 to 400 Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector Cutoff Current ICBO VCB =-30V, IE =0 - - -1 µA Emitter Cutoff Current IEBO VEB =-3.0V, IC =0 - - -1 µA Collector Saturation Voltage VCE(sat) IC =-2.0A, IB =-0.2A - -0.3 -0.5 V Base Saturation Voltage VBE(sat) IC =-2.0A, IB =-0.2A - -1 -2 V DC Current Gain hFE1 VCE=-2.0V, IC=-20mA 30 220 - - DC Current Gain hFE2 VCE =-2.0V, IC =-1.0A** 60 160 400 - Gain Bandwidth Product fT VCE =-50V, IC =-0.1A - 80 - MHz Output Capacitance Cob VCB =-10V, IE =0, f=1.0MHz - 55 - pF TO-126 PNP SILICON POWER TRANSISTOR PMC r eserves the r ight to m ake changes wit hout fur ther notice to any pr oducts her ein. PMC m akes no war ranty, r epresentation or guar antee r egarding the suitability of its products for an y particular pur pose, nor does PMC assum e any liability arising out of the appli cation or use of any pr oduct or circuit, and specifically disclaims any and all liability , including without lim itation consequential damages. The examples of applied circ uits are provided as reference to the reader therefore we shall not undertake any responsibility for the exercise of rights by third parties. PMC Components Pte Ltd. , Singapore, 2000