PMB2331 SIEMENS | Alldatasheet

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PMB 2331 Version 1.2 Preliminary Data Sheet 02.96 T2331-XV12-P1-7600

Edition 02.96 Published by Siemens AG, Bereich Halbleiter, Marketing- Kommunikation, Balanstraße 73,

81541 München

© Siemens AG 1996. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endan- gered. PMB 2331 Revision History: Current Version: 02.96 Previous Version: none Page (in Version) Page (in new Version) Subjects (major changes since last revision)

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Semiconductor Group 4 02.96 MIXER PMB 2331 Version 1.2 Bipolar IC Type Ordering Code Package PMB 2331 P-DSO-8-1

  • – 40 ˚C to + 85 ˚C operational temperature range
  • Gilbert cell mixer
  • Very highly isolated RF, LO and IF ports
  • Good crosstalk performance
  • Low noise
  • Low spurious signal content

1.2 Applications:

  • Cellular radio mixer
  • Cordless telephone mixer
  • UHF transceiver
  • RF data links
  • RF/VHF/UHF frequency conversion

1 Overview

1.1 Functional Description

  • New B6HF bipolar techology, 25 GHz fT
  • Reduced external components
  • Frequency range up to 2.0 GHz
  • 2.7-4.5 V supply voltage
  • Mixer current adjustable with external resistors
  • 1.6mA current consumption typical (no external resistors used)

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1.3 Pin Configuration

(top view) Figure 1

1.4 Pin Definitions and Functions

Pin No. Symbol Function

1 MO Mixer signal output, open collector, not inverted

2 MOX Mixer signal output, open collector, inverted

4 LOX Mixer local oscillator signal base input, inverted

5 LO Mixer local oscillator signal base input, not inverted

6 GND Mixer ground

7 MI Mixer signal emitter input, not inverted

8 MIX Mixer signal emitter input, inverted

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1.5 Functional Block Diagram

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1.6 Circuit Description

The mixer used in this design is a general purpose up-/downconversion gilbert cell mixer. An amplified and filtered RF signal enters the IC via the pins MI/MIX. Using an external supplied local oscillator at LO/LOX a converted output signal is created at the open collector output pins MO/MOX, which have to be connected to an external voltage supply. The RF connections to the mixer inputs may be single ended or balanced, capacitive or inductive coupled. Voltage supply for the mixer has to be connected to the pins VS and GND. To increase the mixer current resistors need to be connected between the pins MI and GND, and between the pins MIX and GND. Differential signals and symmetrical circuits are used throughout the IC. An internal bias driver generates supply voltage and temperature compensated reference voltages. All pins with the exception of GND are ESD protected.

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2 Electrical Characteristics

Note: Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

2.2 Operational Range

Within the operational range the IC operates as described in the circuit description. The AC/DC characteristic limits are not guaranteed. Note: Power levels refer to 50Ω impedance. In the operating range the functions given in the circuit description are fulfilled.

2.1 Absolute Maximum Ratings

TA = – 40 ˚C to + 85 ˚C # Parameter Symbol Limit Values Unit Remarks min. max. 1 Supply voltage VS – 0.3 5.5 V 2a Input voltage MI/MIX VMI/MIX – 0.3 1.9 V VS = 0 V 2b Input voltage LO/LOX VLO/LOX 0.6 VS + 0.3 V

3 Open collector output

VMO/MOX 1.3 VS + 0.3 V 4 Differential input voltageVDIFF 2.0 VPP

5 Junction temperature Tj 125 ˚C

6 Storage temperature TS – 40 125 ˚C

7 Thermal resistance RthJA 185 K/W

# Parameter Symbol Limit Values Unit Remarks min. max.

1 MI/X Input Frequency fMI 2000 MHz

2 LO/X Input Frequency fLO 2000 MHz

3 IF Intermediate Frequency fIF 2000 MHz

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2.3 AC/DC Characteristics

VVCC = 2.7 V to 4.5V,TA = 25 ˚C # Parameter Symbol Limit Values Unit Test Condition Test Circuitmin. typ. max. Supply Current 1 Supply current, total ICI1,2,3 1.6 mA without external resistors R1,2 1a,b 2 Supply current, total ICI1,2,3 4.6 mA including external resistors R1,2 1)(=180Ω) 1a,b MIXER, Signal Input MI/MIX, Down Conversion,R 1,2= 180Ω

3 Input impedance S11M Diagram 2a

4 Max. input level, 1 db comp. at MO/MOX, IF = 45 MHz PMI – 16 dBm f = 0.9 GHz 1a

5 Input intercept point,

Δf = 800 kHz, IF = 45 MHz IICP3MI – 2 dBm f = 0.9 GHz 1a

6 Blocking level

Δf = 800 kHz, IF = 45 MHz PBL – 16 dBm f = 0.9 GHz 1a

7 Noise figure, ssb,

(NFSSB ≈ NFdsb + 3 dB) IF = 45 MHz FMI 9.5 dB f = 0.9 GHz2) 1a MIXER, Local Oscillator Input LO/LOX

8 Input impedance S11LO Diagram 2b

9 Input level PLO – 3 dBm f = 0.9 GHz3) 1a,b Notes see page 10.

Semiconductor Group 10 02.96 Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply atTA = 25°C and the given supply voltage. 1) Minimum value for R41 = R2 = 33Ω. 2) Matching network used. 3) Referenced for specified mixer performance. MIXER, Signal Output MO/MOX, Down Conversion,R 1,2= 180Ω

10 Output current IMO+

4.0 mA including external resistors R1, R2 1a,b

11 Output resistance

RMODiff 38 k Ω IF = 45 MHz 1a

12 Output resistance RMODiff 24 k Ω IF = 300 MHz 1b

13 Output capacitance C MODiff 0.34 pF IF = 45 MHz 1a 14 Output capacitance C MODiff 0.38 pF IF = 300 MHz 1b 15 Power gain, IF = 45 MHzPMI 14 dB f = 0.9 GHz 1a 16 Power gain, IF = 300 MHzPMI 7d B f = 0.9 GHz 1b MIXER, Isolation Between In-/Output, 0.9 GHz

17 MI to MO AMI-MO 30 dB fMI = 945 MHz

fLO = 900 MHz

18 LO to MO ALO-MO 50 dB “ 1a

19 LO to MI ALO-MI 50 dB “ 1a

20 MO to MI AMO-MI 50 dB “ 1a

21 MO to LO AMO-LO 60 dB “ 1a

2.3 AC/DC Characteristics (cont’d)

VVCC = 2.7 V to 4.5V,TA = 25 ˚C # Parameter Symbol Limit Values Unit Test Condition Test Circuitmin. typ. max.

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2.4 Test Circuits

Test Circuit for 45 MHz Intermediate Frequency Test Circuit fIF [MHz] C B [pF] C K [pF] X 1a 45 15 p/100 p 15 p X

Semiconductor Group 12 02.96 Figure 4 Test Circuit 1b Test Circuit for 300 MHz Intermediate Frequency Test Circuit fIF[MHz] L0[nH] L1[nH] C1[pF] C2[pF] C3[pF] C K [pF] 1b ≈ 300 680 150 2.7 12 1.8 15p

Semiconductor Group 13 02.96 Figure 5 Test Circuit 2 S-Parameter Measurement of Mixer S11, S12, S21, S2 The S-Parameters are tested at the indicated frequency and the equivalent parallel or series circuit is calculated on this base. Via the NWA the capacitive coupling is done and the open collector pins are connected to VCC . The output levels at port1 and 2 for pin x and y are – 30 dbm for MI and MO- impedances and – 5 dbm for the LO impedance. S-Parameters have to be considered as design hints and are measured with SIEMENS testboards (RT/Duroid 5880 Teflon, ε = 2.2). Test Test Frequency [GHz] Pin X Pin Y LO-Input impedance .. - 3.0 4 5 Mi-Input impedance .. - 3.0 7 8 MO-Output impedance .. - 3.0 1 2

Semiconductor Group 15 02.96 Figure 8 Test Circuit 2c Mixer Output Impedance Measurement

Electrical Characteristics

S-Parameter Mixer Input MI Impedance, IMO/MOX = 4 mA;f = .. 3 GHz

S-Parameter Mixer Input LO Impedance, IMO/MOX = 4 mA;f = .. 3 GHz

Semiconductor Group 18 02.96 Application Circuit Application circuit: In evaluation General applications also refer to the PMB 2330 application note (different values)

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3 Package Outlines

(Plastic Dual Small Outline Package) GPS05121 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device

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