PM800HSA120_00 MITSUBISHI | Alldatasheet

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Sep.2000 SENS SINK OUT2 OUT1 TEMPVCC GND FO SR IN VI FO SR CI VC C E C E 12 34 5

1.5 OHM

D A DD AA E B Q T F CC X W G C P φK φM φL H J S φ (4 HOLES) R (2 REQD) TYP TYP V SQ.(5 PLACES) TYP Description: Mitsubishi Intelligent Power Mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20kHz. Built-in control circuits pro- vide optimum gate drive and pro- tection for the IGBT and free-wheel diode power devices. Features: u Complete Output Power Circuit u Gate Drive Circuit u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM800HSA120 is a 1200V,

800 Ampere Intelligent Power Mod-

ule. Type Current Rating V CES Amperes Volts (x 10) PM 800 120 Dimensions Inches Millimeters A 3.94 100.0 B 5.20 132.0 C 1.33 33.7 D 3.23 – 0.010 82.0 –0.25 E 4.33 – 0.010 110.0 – 0.25 F 2.84 72.0 H 0.53 13.5 J 0.06 1.5 K 0.17 4.4 L 0.15 3.8 M 0.06 1.5 N 0.35 9.0 P 0.53 13.5 Dimensions Inches Millimeters Q 0.10 2.54 R M8 Metric M8 S f 6.5 f 6.5 T 0.24 26.0 U 0.26 6.5 V 0.25 0.64 W 0.20 5.0 X 1.97 50.0 AA 0.71 18.0 BB 0.55 14.0 CC 0.39 10.0 DD 1.14. 29.0 Outline Drawing and Circuit Diagram MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Power Device Junction Temperature T j -20 to 150 °C Storage T emperature T stg -40 to 125 °C Case Operating Temperature T C -20 to 100 °C Mounting Torque, M6 Mounting Screws — 3.92 ~ 5.88 N · m Mounting Torque, M8 Main Terminal Screws — 8.83 ~ 10.8 N · m Module Weight (T ypical) — 1170 Grams Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V , Inverter Part) V CC(prot.) 800 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms Control Sector Supply Voltage Applied between (V1-VC)V D 20 Volts Input Voltage Applied between (C1-VC)V CIN 10 Volts Fault Output Supply Voltage (Applied between Fo-Vc)V FO 20 Volts Fault Output Current (Fault Current of FO Terminal) I FO 20 mA IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V , VCIN = 5V) V CES 1200 Volts Collector Current, (TC = 25°C) I C 800 Amperes Peak Collector Current, (TC = 25°C) I CP 1600 Amperes Collector Dissipation P C 4630 Watts MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Over Current T rip Level Inverter Part OC -20 °C £ Tj £ 125°C, VD = 15V 1060 1300 — Amperes Short Circuit Trip Level Inverter Part SC -20 °C £ Tj £ 125°C, VD = 15V 1350 1700 — Amperes Over Current Delay Time t off(OC) VD = 15V — 5 — ms Over Temperature Protection OT Trip Level 100 110 120 °C OTr Reset Level 85 95 105 °C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts UV r Reset Level — 12.5 — Volts Supply Voltage V D Applied between V1-VC 13.5 15 16.5 Volts Circuit Current I D VD = 15V, VCIN = 5V, V1-VC —2 34 0 m A Input ON Threshold Voltage V CIN(on) Applied between C1-VC 1.2 1.5 1.8 Volts Input OFF Threshold Voltage V CIN(off) Applied between C1-VC 1.7 2.0 2.3 Volts PWM Input Frequency f PWM 3-f Sinusoidal — 15 20 kHz Fault Output Current I FO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA Minimum Fault Output Pulse Width t FO VD = 15V 1.0 1.8 — ms SR Terminal Output Voltage V SR -20°C £ Tj £ 125°C, Rin = 6.8kW 4.5 5.1 5.6 Volts MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I CES VCE = VCES , Tj = 25°C — — 1.0 mA VCE = VCES , Tj = 125°C— — 1 0 m A Emitter-Collector Voltage V EC -IC = 800A, VD = 15V, VCIN = 5V — 2.6 3.5 Volts Collector-Emitter Saturation Voltage V CE(sat) VD = 15V , VCIN = 0V, IC = 800A, — 2.5 3.5 Volts Tj = 25°C VD = 15V , VCIN = 0V, IC = 800A, — 2.3 3.3 Volts Tj = 125°C Inductive Load Switching Times t on 0.5 1.4 2.5 ms trr VD = 15V, VCIN = 0 « 5V — 0.2 0.4 ms tC(on) VCC = 600V, IC = 800A — 0.4 1.0 ms toff Tj = 125°C — 3.0 4.0 ms tC(off) — 0.6 1.1 ms Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)Q Each IGBT — — 0.027 °C/Watt R th(j-c)F Each FWDi — — 0.045 °C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module, — — 0.022 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across C1-E2 Terminals 0 ~ 800 Volts VD Applied between V1-VC 15 – 1.5 Volts Input ON Voltage V CIN(on) Applied between C1-VC 0 ~ 0.8 Volts Input OFF Voltage V CIN(off) Applied between C1-VC 4.0 ~ VSR Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time t dead Input Signal ‡ 4.0 ms MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT -BASE TYPE INSULATED PACKAGE COLLECTOR CURRENT, I C , (AMPERES) SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATON VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 400 600 800 1000 1.0 2.0 3.0 VD = 15V VCIN = 0V Tj = 25°C Tj = 125°C SUPPLY VOLTAGE, V D , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATON VOLTAGE CHARACTERISTICS (TYPICAL) 0 1 31 51 7 1.0 2.0 3.0 IC = 800A VCIN = 0V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CEsat, (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 1.0 2.0 3.0 200 Tj = 25oC VCIN = 0V 400 800 600 VD = 17V COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIMES, ton, toff, (µs) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 101 102 103 103 100 10-1 ton VCC = 600V VD = 15V Inductive Load toff Tj = 25°C Tj = 125°C COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIMES, tc(on), tc(off), (µs) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 101 101 102 103 100 10-1 VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C tc(on) tc(off) COLLECTOR REVERSE CURRENT, -I C , (AMPERES) REVERSE RECOVERY TIME, t rr, (µs) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 102 103 104 10-1 10-2 Irr trr VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 103 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) 100 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) COLLECTOR REVERSE CURRENT,-I E, (AMPERES) DIODE FORWARD CHARACTERISTICS 103 102 101 Tj = 25°C Tj = 125°C VD = 15V VCIN = 5V 0 1.0 2.0 3.0

Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) 101 10-1 100 10 1 100 10-1 10-2 10-3 10-210-3 SINGLE PULSE STANDARD VALUE = R th(j-c)Q = 0.027°C/W TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-1 100 10 1 100 10-1 10-2 10-3 10-210-3 SINGLE PULSE STANDARD VALUE = R th(j-c)F = 0.045°C/W SUPPLY VOLTAGE, V D, (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) 0 1 31 51 7 0.8 1.0 1.2 Tj = 25°C JUNCTION TEMPERATURE, T j, (°C) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 20 100 180 0.8 1.0 1.2 VD = 15V JUNCTION TEMPERATURE, T j, (°C) UV TRIP-RESET LEVEL, UV t, UVr, (VOLTS) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDANCY (TYPICAL) 20 100 180 VD = 15V UV t UV r JUNCTION TEMPERATURE, T j, (°C) OVER CURRENT TRIP LEVEL % (NORMALIZED) OVER CURRENT TRIP LEVEL VS. TEMPERATURE DEPENDENCY (TYPICAL) 20 100 180 0.8 1.0 1.4 1.2 VD = 15V