PM800DV1B060 MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Publication Date : August 2011 <Intelligent Power Module> PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PM800DV1B060 FEATURE a) Adopting new 5th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible V-series package.

  • Monolithic gate drive & protection logic
  • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 INTERNAL FUNCTIONS BLOCK DIAGRAM MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage V D=15V, VCIN=15V 600 V IC T C=25°C 800 ICRM Collector Current Pulse 1600 A Ptot Total Power Dissipation T C=25°C 2500 W IE Emitter Current T C=25°C 800 IERM (Free wheeling Diode Forward current) Pulse 1600 A Tj Junction Temperature -20 ~ +150 °C *: Tc measurement point is just under the chip. CONTROL PART Symbol Parameter Conditions Ratings Unit VD Supply Voltage Applied between : V P1-VPC, VN1-VNC 20 V VCIN Input Voltage Applied between : C PI-VPC, CNI-VNC 20 V VFO Fault Output Supply Voltage Applied between : F PO-VPC, FNO-VNC 20 V IFO Fault Output Current Sink current at F PO, FNO terminals 20 mA IGBT FWDi OUT SINK SCGND TjA TjK AMP VCC IN Fo OUT SINK SC GND TjA TjK AMP VCC IN Fo C2E1 VP1 VPC CPI FPO NC IGBT FW Di VN1 VNC CNI FNO NC

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 TOTAL SYSTEM Symbol Parameter Conditions Ratings Unit VCC(PROT) Supply Voltage Protected by SC VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start 400 V VCC(surge) Supply Voltage (Surge) Applied between : C1-E2, Surge value 500 V TC Module case operating temperature -20 ~ +100 °C Tstg Storage Temperature -40 ~ +125 °C Visol Isolation Voltage 60Hz,Sinusoidal, Charged part to Base plate, AC 1min, RMS 2500 V *: TC measurement point is just under the chip. THERMAL RESISTANCE Limits Symbol Parameter Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to case, IGBT (per 1 element) (Note.1) - - 0.05 Rth(j-c)D Thermal Resistance Junction to case, FWDi (per 1 element) (Note.1) - - 0.09 Rth(c-s) Contact Thermal Resistance Case to heat sink, (per 1 module) Thermal grease applied (Note.1) - 0.014 - K/W Note1: If you use this value, Rth(s-a) should be measured just under the chips.

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Limits Symbol Parameter Conditions Min. Typ. Max. Unit VCEsat Collector-Emitter Saturation Voltage VD=15V, IC=800A VCIN= 0 V , P u l s e d ( F i g . 1 ) Tj=125°C - 1.85 2.35 V VEC Emitter-Collector Voltage I E=800A, VD=15V, VCIN= 15V (Fig. 2) - 1.7 2.8 V ton 0.3 0.8 2.0 trr - 0.25 0.8 tc(on) - 0.4 1.0 toff - 1.4 2.3 tc(off) Switching Time VD=15V, VCIN=0V←→15V VCC=300V, IC=800A Tj=125°C Inductive Load (Fig. 3,4) - 0.3 1.0 Tj=25°C - - 1 ICES Collector-Emitter Cut-off Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10 mA CONTROL PART Limits Symbol Parameter Conditions Min. Typ. Max. Unit VP1-VPC - 2 4 ID Circuit Current V D=15V, VCIN=15V VN1-VNC - 2 4 mA Vth(ON) Input ON Threshold Voltage 1.2 1.5 1.8 Vth(OFF) Input OFF Threshold Voltage Applied between : CPI-VPC, CNI-VNC 1.7 2.0 2.3 V SC Short Circuit Trip Level -20 ≤Tj≤125°C, VD=15V (Fig. 3, 6) 1200 - - A toff(SC) Short Circuit Current Delay Time OT Trip level 135 - - OT(hys) Over Temperature Protection Detect Temperature of IGBT chip Hysteresis - 20 - UVt Trip level 11.5 12.0 12.5 UVr Supply Circuit Under-Voltage Protection -20≤Tj≤125°C Reset level - 12.5 - V IFO(H) - - 0.01 IFO(L) Fault Output Current V D=15V, VFO=15V (Note.2) - 10 15 mA tFO Fault Output Pulse Width V D=15V (Note.2) 1.0 1.8 - ms Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 MECHANICAL RATINGS AND CHARACTERISTICS Limits Symbol Parameter Conditions Min. Typ. Max. Unit Ms Mounting part screw : M6 3.92 4.9 5.88 Mt Mounting Torque Main terminal part screw : M8 8.83 9.81 10.8 N・m m Weight - - 720 - g RECOMMENDED CONDITIONS FOR USE Symbol Parameter Conditions Recommended value Unit VCC Supply Voltage Applied across C1-E2 terminals ≤ 400 V VD Control Supply Voltage Applied between : VP1-VPC, VN1-VNC (Note.3) 15.0±1.5 V VCIN(ON) Input ON Voltage ≤ 0.8 VCIN(OFF) Input OFF Voltage Applied between : CPI-VPC, CNI-VNC ≥ 4.0 V fPWM PWM Input Frequency Using App lication Circuit of Fig. 8 ≤ 20 kHz tdead Arm Shoot-through Blocking Time For IPM’s each input signals (Fig. 7) ≥ 3.0 s Note3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. ( These test should not be done by using a curve tracer or its equivalent. ) Fig. 1 VCEsat Test Fig. 2 VEC Test Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform Fig. 5 ICES Test Fig. 6 SC test waveform Fig. 7 Dead time measurement point example E1C2 VD1 Ic Vcc VD2 VP1 VPC CPI FPO NC VN1 VNC CNI FNO NC E1C2 VD1 Ic Vcc VD2 VP1 VPC CPI FPO NC VN1 VNC CNI FNO NC V*1 V*C C*I E1(E2) C1(C2) F*OVD NC A pulse V*1 V*C C*I E1(E2) C1(C2) IcF*O VVD NC V*1 V*C C*I E1(E2) C1(C2) -IcF*O VVD NC VCE IE

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ;

  • Design the PCB pattern to minimize wiring length between opto- coupler and IPM’s input terminal, and also to minimize the stra y capacity between the input and output wirings of opto-coupler.
  • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
  • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.
  • Slow switching opto-coupler: CTR > 100%
  • Use 6 isolated control power supplies (V D). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
  • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2 terminal. Vcc IN GND OUT OT VP1 FPO VPC SC E1C2 (U) Vcc IN GND OUT OT SC -IFVD1 20k Fo CPI FNO VN1 VNC CNI FoIFVD2 20k Vcc IN GND OUT OT VP1 FPO VPC SC E1C2 (V) Vcc IN OUT OT SC GND IF VD3 20k FoCPI FNO VN1 VNC CNI Fo IFVD4 20k Vcc Vcc IN GND OUT OT VP1 FPO VPC SC E1C2 (W) Vcc IN GND OUT OT SC IFVD5 20k Fo CPI FNO VN1 VNC CNI FoIFVD6 20k M ≥10µ ≥0.1µ ≥10µ ≥0.1µ ≥10µ ≥0.1µ ≥10µ ≥0.1µ ≥10µ ≥0.1µ ≥10µ ≥0.1µ

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V) EMITTER CURRENT IE (A) CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) 100 200 300 400 500 600 700 800 0.5 1.0 1.5 2.0 Tj=25°C VD=17V VD=15V VD=13V 0.5 1.5 2.5 0 100 200 300 400 500 600 700 800 VD=15V Tj=25°C T j=125°C 1.0 1.5 2.0 2.5 12 13 14 15 16 17 18 Ic=800A Tj=25°C T j=125°C 100 200 300 400 500 600 700 800 00 . 511 . 52 VD=15V Tj=25°C Tj=125°C

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) SWITCHING TIME ton, toff (μs) SWITCHING TIME tc(on), tc(off) (μs) COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) SWITCHING ENERGY Eon, Eoff (mJ/pulse) REVERSE RECOVERY TIME trr (μs) REVERSE RECOVERY CURRENT Irr (A) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 0.1 10 100 1000 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load toff ton 0.01 0.1 10 100 1000 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load tc(off) tc(on) 0 200 400 600 800 1000 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load Eoff Eon 0.0 0.1 0.2 0.3 0.4 0.5 0 200 400 600 800 1000 100 200 300 400 500 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load Irr trr

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) ID VS. fc CHARACTERISTICS (TYPICAL) REVESE RECOVERY ENERGY Err (mJ/pulse) ID (mA) EMITTER CURRENT IE (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) UVt / UVr (V) SC (SC of Tj=25°C is normalized 1) Tj (°C) Tj (°C) 0 200 400 600 800 1000 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load 0 5 10 15 20 25 VD=15V Tj=25°C Tj=125°C -50 0 50 100 150 UVt UVr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 VD=15V

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 0.001 0.01 0.1 TIME t (sec) Single Pulse IGBT Part; Per unit base: Rth(j-c)Q=0.05 K/W FWDi Part; Per unit base: Rth(j-c)D=0.09K/W

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 Main Revision for this Edition Out put characteristics , “VD=13V” and “VD=17V” were reversed. 8 November 20111 Points Pages Revision Date No.

<Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Publication Date : August 2011 © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials

  • These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
  • Mitsubishi Electric Corporation assumes no res ponsibility for any damage, or infringement of any third-party’s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
  • All information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that cust omers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product info rmation before purchasing a product listed herein. The information described here may contain technica l inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to info rmation published by Mitsubishi Electr ic Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/semiconductors/).
  • When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
  • Mitsubishi Electric Corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
  • The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
  • If these products or technologies ar e subject to the Japanese export cont rol restrictions, they must be exported under a license from the Ja panese government and cannot be im ported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
  • Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.