PM50CSD060

PM50CSD060 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE PM50CSD060 FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.

• 3 φ 50A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)
• Acoustic noise-less 3.7kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm PBT 119 78654321 BPN WV U A MOUNTING HOLES Screwing depth Min9.0 19- 0.5 31.6 2-φ2.54 32.6 110±1 95±0.5 24.5 17.5 0.5±0.3 3.22 2±0.5 74±0.5 89±1 19.4 66.44 4.5 2626 2020 17.02 10103-2 4-R6 6-M5NUTS 4-φ5.56-23-23-210 LABEL 10.6 11.61.6 3.22 3-2 φ2.54 21.2 –0.5 +1.0 0.5 Terminal code 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. NC 16. UN 17. VN 18. WN 19. Fo A : DETAIL

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 600 100 125 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VFO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals VD VCIN V V WP VWP1 VWPCUNNC Fo NWV P U VP VVP1 VVPC UP VUP1 VUPCWN VN1VNC VN UFOWFO VFO RfoRfo RfoRfo Th Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Rfo=1.5kΩ NC

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 ParameterSymbol Supply Voltage Protected by OC & SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Condition V CC(surge) TC Tstg Viso Ratings VCC(PROT) 400 500 –20 ~ +100 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value or without switching (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) Tc measurement point is as shown below. (Base plate depth 3mm) TOTAL SYSTEM PBT BPN WV U Tc64mm °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Case to fin, Thermal grease applied (per 1 module) Symbol Parameter Test Condition UnitMax. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-2) T C measurement point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips. Limits 1.00 2.50 0.82 1.51 0.027 Typ.Min. 2.3 2.3 3.3 2.4 0.3 1.0 3.3 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 50A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Test Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.8 1.7 1.7 2.2 1.2 0.15 0.4 2.4 0.6 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 15V↔ 0V VCC = 300V, IC = 50A Tj = 125°C Inductive Load (upper and lower arm) (Fig. 3) VCE = VCES, VCIN = 15V (Fig. 4) VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 3.5 3.5 Main terminal screw : M5 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Test Condition Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 560 MECHANICAL RATINGS AND CHARACTERISTICS VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC ID V mA ms 1.8 2.3 220 180 125 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Over Current Trip Level Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) OC SC toff(OC) OT OTr UV UV r IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 109 111 11.5 1.0 ParameterSymbol Test Condition Max.Min. Typ. Unit Limits 1.5 2.0 128 132 118 100 12.0 12.5 1.8 (Note-3) Fault output is given only when the internal OC, SC, OT & UV protection. Fault output of OC, SC and UV protection operate by upper and lower arms. Fault output of OT protection operate by lower arm. Fault output of OC, SC protection given pulse. Fault output of OT, UV protection given pulse while over level. Base-plate Temperature detection, V D = 15V –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-3) VD = 15V (Note-3) V µs VD = 15V (Fig. 5,6) –20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6) VD = 15V (Fig. 5,6) VN1-VNC VXP1-VXPC Tj = –20°C Tj = 25°C Tj = 125°C A A RECOMMENDED CONDITIONS FOR USE Recommended value UnitTest ConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit input signal of IPM, 3φ sinusoidal PWM VVVF inverter (Fig. 8) For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 400 15 ± 1.5 ≤ 0.8 ≥ 4.0 ≤ 20 ≥ 2.5 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V (Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ±5V/µs, 2Vp-p

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) 10% 90% trr Irr trtd (on) tc (on) tc (off) td (off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td (on) + tr) (toff= td (off) + tf) VD (all) U,V,W, (N) P, (U,V,W) A Pulse VCEVCIN (15V) VD (all) U,V,W, (N) P, (U,V,W) VCIN VCC IC IC IC OC SC VCIN toff (OC) P, (U,V,W) U,V,W, (N) U,V,W, (N)VD (all) IN Fo Fo Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic P N N CS CS U,V,W Vcc Vcc Ic Ic P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo IN Fo IN Fo U,V,W NVCINN VCINP VD VD P Ic Vcc VCINN VCINP t t tdead tdead tdead Short Circuit Current Over Current Constant Current Constant Current Fig. 7 Dead time measurement point example Fig. 3 Switching time Test circuit and waveform Fig. 1 VCE(sat) Test Fig. 2 V EC Test a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching Fig. 4 ICES Test Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform VD (all) VD (all)

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Quick opto-couplers: TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance.
• Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT Si GNDGND In Vcc U V W N P M IF : Interface which is the same as the U-phase OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Fo Fo Fo Vcc OUT Si GNDGND In Fo TEMP Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC Th UN VN VN1 WN VNC Rfo Rfo Rfo RfoFo VVP1 VP VVPC ≥0.1µ ≥0.1µ ≥0.1µ 20k ≥10µ ≥10µ ≥10µ ≥10µ ≥0.1µ VFO WFO UFO VUP1 UP VUPC NC NC IF IF IF VD VD VD VD Fig. 8 Application Example Circuit 20k 20k 20k

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 1.5 0.5 00 10 20 30 40 50 VD = 15V Tj = 25°C Tj = 125°C 00 10.5 1.5 2 Tj = 25°C 1.5 0.5 0 181312 15 14 17 16 10–1 101 57 101100 100 23 23 5 7 102 10–1 101 57 101100 100 23 23 5 7 102 toff ton IC = 50A Tj = 25°C Tj = 125°C VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load 15V 13V VD = 17V tc(off) tc(on) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) SWITCHING TIME ton, toff (µs) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse) 10–1 101 57 101100 100 23 23 5 7 102 VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load ESW(on) ESW(off) PERFORMANCE CURVES

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 10–2 100 25 7 101100 10–1 102 100 102 101 432 3 5 7 4 Irr VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load trr DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 1010 100 250 51 0 1 5 2 0 N-side P-side VD = 15V Tj = 25°C TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) CARRIER FREQUENCY fc (kHz) ID VS. fc CHARACTERISTICS (TYPICAL) CIRCUIT CURRENT ID (mA) Single Pulse Per unit base = R th(j – c)Q = 1.00°C/W 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) Single Pulse Per unit base = Rth(j – c)F = 2.50°C/W 100 102 101 0.5 1 1.5 2 2.5 VD = 15V Tj = 25°C Tj = 125°C COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL)