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MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE PM50CS1D120 FEATURE Inverter + Drive & Protection IC

3 phase 50A/1200V CSTBT TM (The Current senser and the thermal senser with a build-in CSTBTTM.)
Monolithic gate drive & protection logic
Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 5-M4 NUT 2-φ5.5 MOUNTING HOLES 23.79 2-2.54 2-2.54 2-2.54 5-2.54 10.6 6.5 10.16 10.16 15 19 19 19 LABEL 10.16 106 ±0.3 28 11.6 (10) 16.5 120 WVUNP 67.4 5.57 39 8.52.5 16.525 71 0 1 5 31.5 – 1 0.5 1. VWPC 2. WP 3. VWP1 4. VVPC 5. VP 6. VVP1 7. VUPC 8. UP 9. VUP1 10. VNC 11. VN1 12. WN 13. VN 14. UN 15. Fo Terminal code

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 1200 100 500 –20 ~ +150 Ratings VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C (Note-1) TC = 25°C TC = 25°C (Note-1) V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Unit INTERNAL FUNCTIONS BLOCK DIAGRAM VN UN WP VWP1VWPC VP VVP1VVPC UP VUP1VUPC NWV U P Fo Rfo VNC VN1WN Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Vcc Gnd Si Out OT Gnd In Vcc Gnd Si Out OT Gnd In Vcc Gnd Si Out OT Rfo = 1.5kΩ *: Tc measurement point is just under the chip. VFO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Applied between : FO-VNC Sink current at FO terminals VD VCIN V V

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition V CC(surge) Tstg Viso Ratings VCC(PROT) 800 1000 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. TOTAL SYSTEM 0.25 0.41 0.046 °C/W Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT part (per 1 element) (Note-1) Inverter FWDi part (per 1 element) (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-1) Tc (under the chip) measurement point is below. Parameter Limits Typ. Max. UP IGBT 21.4 4.7 VP WP UN VN WN FWDi 21.4 –4.6 IGBT 65.0 4.7 FWDi 65.0 –4.6 IGBT 90.0 4.7 FWDi 90.0 –4.6 IGBT 36.0 –0.6 FWDi 36.0 –9.9 IGBT 51.0 –0.6 FWDi 51.0 –9.9 IGBT 76.0 –0.6 FWDi 76.0 –9.9 arm axis X Y (unit : mm) 2.15 2.35 3.50 2.0 0.8 1.0 2.8 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 50A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.3 1.65 1.85 2.50 0.65 0.20 0.35 1.10 0.35 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔15V VCC = 600V, IC = 50A Tj = 125°C Inductive Load (Fig. 3,4) VCE = VCES, VD = 15V (Fig. 5) VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit Bottom view X Y PNU V W

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 –20 ≤ Tj ≤ 125°C VD = 15V, VCIN = 15V (Note-2) VD = 15V (Note-2) Vth(ON) Vth(OFF) SC toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO Trip level Hysteresis Trip level Reset level VD = 15V (Fig. 3,6) VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC ID V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width CONTROL PART 1.2 1.7 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 1.0 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal SC, OT & UV protection. Fault output of SC, OT & UV protection operate by lower arms. Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level. V µs VN1-VNC V*P1-V*PC A 3.5 2.0 Mounting part screw : M5 Main terminal part screw : M4 Symbol Parameter Mounting torque Weight Condition Unit N • m g Limits Min. Typ. Max. 2.5 1.5 3.0 1.7 400 MECHANICAL RATINGS AND CHARACTERISTICS RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit of Fig. 8 Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency ≤ 800 15.0 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 VCC VCIN(ON) VCIN(OFF) fPWM VD V V kHz (Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak tdead Arm Shoot-through Blocking Time For IPM’s each input signals (Fig. 7) ≥ 2.5 µs ≤ ± 5V/µs ≤ 2V GND 15V Detect Temperature of IGBT chip

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (V D), the input terminals should be pulled up by resistors, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) U,V,(N) U,V,W,B, (N)VD (all) IN Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W,B) VCIN (15V) –Ic Fig. 7 Dead time measurement point example Fig. 1 VCE(sat) Test Fig. 2 V EC, (VFM) Test 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal V CIN (Upper Arm) IPM’ input signal V CIN (Lower Arm) 10% 90% trr Irr trtd(on) tc(on) tc(off) td(off) VCIN Ic VCE 10%10% 10% 90% tf (ton = td(on) + tr) (toff = td(off) + tf) Fo P N N CS CS U,V Vcc Vcc Ic IcVD (all) VD (all) P U,V VCIN VCIN VCIN (15V) VCIN (15V) Fo Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching VCIN Fig. 5 ICES Test Fig. 6 SC test waveform SC Trip Short Circuit Current toff(SC) VD (all) U,V,W,B, (N) P, (U,V,W,B) A Pulse VCEVCIN (15V) Ic Fo IN Fo Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 NOTES FOR STABLE AND SAFE OPERATION ;

Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. : Interface which is the same as U-phase Fig. 8 Application Example Circuit OUT Si OT OT OT OT OT OT GNDGND In Vcc U V W N P M IF OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC UN VN VN1 WN VNC RfoFo VVP1 VP VVPC ≥0.1µ 1kΩ ≥0.1µ ≥0.1µ 20kΩ 20kΩ 20kΩ ≥10µ ≥10µ ≥10µ 20kΩ ≥10µ ≥0.1µ VUP1 UP VUPC IF IF IF VD VD VD VD

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 PERFORMANCE CURVES 00 0.5 1.0 1.5 2.0 001 0 2 03 04 05 06 07 0 0.5 1.0 1.5 2.0 2.5 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 12 13 14 15 16 17 18 T j = 25°C 15V 13V VD = 17V VD = 15V Tj = 25°C Tj = 125°C VD = 15V Tj = 25°C Tj = 125°C IC = 50A Tj = 25°C Tj = 125°C ton toff VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load tc(on) tc(off) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) CONTROL POWER SUPPLY VOLTAGE VD (V) SWITCHING TIME ton, toff (µs) SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) 100 102 101 100 10123 4 5 7 10223 4 5 7 10–1 100 101 100 10123 4 5 7 10223 4 5 7 COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) 10–1 100 101

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 01 0 20 30 40 50 60 70 01 0 20 30 40 50 60 700 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 01 0 20 30 40 50 60 70 00 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Eon Eoff VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load trr Irr VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load N-side P-side VD = 15V Tj = 25°C Tj = 125°C VD = 15V –50 0 50 100 150 –50 0 50 100 150 COLLECTOR CURRENT IC (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS Eon, Eoff (mJ/pulse) COLLECTOR RECOVERY CURRENT –IC (A) SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS Err (mJ/pulse) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) RECOVERY TIME trr (µs) RECOVERY CURRENT lrr (A) fc (kHz) ID VS. fc CHARACTERISTICS (TYPICAL) ID (mA) Tj (°C) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) UVt /UVr Tj (°C) SC UVt UVr

MITSUBISHI <INTELLIGENT POWER MODULES> PM50CS1D120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 23 5710–323 5723 57 10–4 23 57 10123 57 10010–123 5710–210–5 10–2 10–3 10–1 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) t(sec) Single Pulse IGBT part; Per unit base = Rth(j-c)Q = 0.25°C/W FWDi part; Per unit base = Rth(j-c)F = 0.41°C/W

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PM50CS1D120 specifications and overview.

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INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

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INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

Source title PM50CS1D120 Datasheet(PDF) - Mitsubishi Electric Semiconductor

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