PM50B5LB060

PM50B5LB060_11 MITSUBISHI | Alldatasheet

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Jun. 2007 MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE PM50B5LB060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conserva- tion upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.

• 2 φ 50A, 600V Current-sense IGBT type inverter
• 50A, 600V Current-sense Chopper IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION Photo voltaic power conditioner PACKAGE OUTLINES Dimensions in mm 7.75 98.25 2.5 232323 19.5 25.7525 L A B E L 9.5 1.5 1.52-φ2.5 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. NC 10. NC 11. NC 12. NC 13. VNC 14. VN1 15. NC 16. UN 17. VN 18. WN 19. Fo Terminal code 19-■0.5 9.5 11.5 27.5 106 ±0.25 66.519.75 3.25 444 44 44 4 16 15.25 6-23-23-23-2 1616 120 NP BUV W 91 3 1 9 4-φ2.5 MOUNTING HOLES 2-φ5.5

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 600 100 134 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VCES IC ICP PC IF VR(DC) Tj CONVERTER PART Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) TC = 25°C TC = 25°C V A A W A V Symbol Parameter Condition Ratings Unit 600 100 134 600 –20 ~ +150 I FO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, FO-VNC Sink current at UFO, VFO, FO terminals VD VCIN VFO V V GND IN Fo Vcc GND SC OUTOT UP GND IN Fo Vcc GND SC OUTOT N GND IN Fo Vcc GND SC OUTOT GND IN Fo Vcc GND SC OUTOT W GND IN Fo Vcc GND SC OUTOT VB UP V UP1 UFOVUPCUNVNVN1WNVNC VP V VP1 VFOFONC VVPCNCNCNCNC 1.5k 1.5k 1.5k

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition V CC(surge) Tstg Viso Ratings VCC(PROT) 450 500 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2.3 2.0 3.3 1.4 0.2 0.4 1.8 0.4 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 50A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.3 1.7 1.55 2.2 0.7 0.1 0.2 0.9 0.2 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔15V VCC = 300V, IC = 50A Tj = 125°C Inductive Load (Fig. 3,4) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, IC = 50A VCIN = 0V (Fig. 1) TOTAL SYSTEM V mA V µs Unit 0.93 1.57 0.93 0.96 1.57 0.038 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c)F Rth(c-f) Inverter IGBT part (per 1/4 module) (Note-1) Inverter FWDi part (per 1/4 module) (Note-1) Converter IGBT part (Note-1) Converter FWDi upper part (Note-1) Converter FWDi lower part (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-1) Tc (under the chip) measurement point is below. Parameter Limits Typ. Max. UP IGBT 32.7 –6.4 VP WP UN VN WN FWDi 32.2 0.4 IGBT 64.6 –7.8 FWDi 66.1 –1.0 FWDi 83.6 –4.8 IGBT 39.8 7.2 FWDi 40.3 0.4 IGBT 56.5 2.8 FWDi 56.0 –4.0 IGBT 75.5 2.8 FWDi 75.0 –4.0 arm axis X Y (unit : mm) Bottom view

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 3.5 Mounting part screw : M5 Symbol Parameter Mounting torque Weight Condition Unit N • m g Limits Min. Typ. Max. 2.5 3.0 340 MECHANICAL RATINGS AND CHARACTERISTICS 0.3 VCE(sat) ICES VEC VFM ton trr tc(on) toff tc(off) V mA Min. Typ. Max. V V Collector-Emitter Saturation Voltage FWDi Forward Voltage Forward Voltage Collector-Emitter Cutoff Current C = 50A, VCIN = 15V, VD = 15V (Fig. 2) IF = 50A Tj = 25°C Tj = 125°C UnitParameterSymbol Condition Limits 2.3 2.0 3.3 3.0 1.4 0.2 0.4 1.8 0.4 1.7 1.55 2.2 1.9 0.7 0.1 0.2 0.9 0.2 T j = 25°C Tj = 125°C CONVERTER PART VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) VCE = VCES, VD = 15V (Fig. 5) VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC UN • VN • WN-VNC ID V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 100 100 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 0.2 145 125 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operat e to protect it. VD = 15V Detect Tj of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-2) VD = 15V (Note-2) V µs VN1-VNC V*P1-V*PC A RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC UN • VN • WN-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Short-through Blocking Time ≤ 450 15 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 ≥ 2.0 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V (Note-3) With ripple satisfying the following conditions : dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak VD = 15V (Fig. 3,6) Inverter part Converter part VD = 15V, VCIN = 0V↔15V VCC = 300V, IC = 50A Tj = 125°C Inductive Load (Fig. 3,4) µsSwitching Time

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W) U,V, (N) U,V,W, (N)VD (all) IN Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic Fig. 7 Dead Time Measurement Point Example Fig. 1 VCE(sat) Test Fig. 2 V EC, (VFM) Test 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal V CIN (Upper Arm) IPM’ input signal V CIN (Lower Arm) 10% 90% trr Irr trtd(on) tc(on) tc(off) td(off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td(on) + tr) (toff= td(off) + tf) Fo Fo P N N CS CS U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching VCIN Fig. 5 ICES Test Fig. 6 SC Test Waveform SC Trip Short Circuit Current toff(SC) VD (all) U,V,W, (N) P, (U,V,W) A Pulse VCEVCIN (15V) Ic Fo IN Fo Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. OUT SC OT GNDGND IN Vcc U AC Output V W N B P →IF Fo OUT SC OT GNDGND IN Vcc Fo OUT SC OT GNDGND IN Vcc Fo OUT SC OT GNDGND IN Vcc Fo OUT SC OT GNDGND IN Vcc Fo 20k ≥0.1µ ≥10µ UFO VUP1 UP VUPC →IF 20k 20k ≥0.1µ ≥10µ →IF ≥0.1µ ≥10µ VFO VVP1 VP UN 20k →IF ≥0.1µ ≥10µ VN VN120k →IF ≥0.1µ ≥10µ WN VNC FO NC VVPC NC NC NC NC Fig. 8 Application Example Circuit 1.5k 1.5k 1.5k

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 PERFORMANCE CURVES (INVERTER PART) 100 23 5 7 101 23 5 7 102 00 10.5 1.5 2 Tj = 25°C 15V 13V VD = 17V 1.5 0.5 00 10 20 30 40 50 60 VD = 15V Tj = 25°C Tj = 125°C 1.5 0.5 0 181312 15 14 17 16 IC = 50A Tj = 25°C Tj = 125°C 10–2 100 100 10–1 23 5 7 101 23 5 7 102 tc(on) VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load tc(off) tc(off) 10–1 101 100 toff VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load ton ton toff 100 23 5 7 101 23 5 7 10210–2 101 10–1 100 ESW(on) ESW(off) ESW(off) VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) SWITCHING TIME ton, toff (µs) SWITCHING TIME CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR CURRENT I C (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse)

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 10–3 100 10–2 10–1 10–3 23 5 7 10–2 23 5 7 10–110–5 23 5 7 10–4 23 5 7 23 5 7 100 23 5 7 101 10–3 100 10–2 10–1 10–3 23 5 7 10–2 23 5 7 10–110–5 23 5 7 10–4 23 5 7 23 5 7 100 23 5 7 101 100 23 5 7 101 23 5 7 10210–2 10–1 100 101 10–1 100 101 102 100 102 101 0.5 1 1.5 2 2.5 VD = 15V Tj = 25°C Tj = 125°C Irr VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load trr 100 23 5 7 101 23 5 7 10210–3 10–2 10–1 100 VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load Err Single Pulse Per unit base = R th(j – c)Q = 0.93°C/W Single Pulse Per unit base = Rth(j – c)F = 1.57°C/W COLLECTOR REVERSE CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) FWDi FORWARD VOLTAGE CHARACTERISTICS (TYPICAL) REVERSE RECOVERY LOSS Err (mJ/Pulse) COLLECTOR REVERSE CURRENT –IC (A) FWDi REVERSE RECOVERY LOSS CHARACTERISTICS (TYPICAL) FWDi REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c)

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 (CONVERTER PART) 10–2 100 100 10–1 23 5 7 101 23 5 7 102 tc(on) VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load tc(off) tc(off) 100 23 5 7 101 23 5 7 10210–1 101 100 toff VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load ton 100 23 5 7 101 23 5 7 10210–2 101 10–1 100 ESW(on) ESW(off) ESW(off) VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load 00 10.5 1.5 2 Tj = 25°C 15V 13V VD = 17V 1.5 0.5 00 10 20 30 40 50 60 VD = 15V Tj = 25°C Tj = 125°C 1.5 0.5 0 181312 15 14 17 16 IC = 50A Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) SWITCHING TIME CHARACTERISTICS (Lower Arm · TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) SWITCHING TIME ton, toff (µs) SWITCHING TIME CHARACTERISTICS (Lower Arm · TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR CURRENT I C (A) SWITCHING LOSS CHARACTERISTICS (Lower Arm · TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse)

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2007 10–3 100 10–2 10–1 10–3 23 5 7 10–2 23 5 7 10–110–5 23 5 7 10–4 23 5 7 23 5 7 100 23 5 7 101 10–3 100 10–2 10–1 10–3 23 5 7 10–2 23 5 7 10–110–5 23 5 7 10–4 23 5 7 23 5 7 100 23 5 7 101 10–3 100 10–2 10–1 10–3 23 5 7 10–2 23 5 7 10–110–5 23 5 7 10–4 23 5 7 23 5 7 100 23 5 7 101 0 0.5 1 1.5 2 2.5100 102 101

2 Tj = 25°C

Tj = 125°C VD = 15V 100 23 5 7 101 23 5 7 10210–2 10–1 100 101 10–1 100 101 102 Irr VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load trr 100 23 5 7 101 23 5 7 10210–3 10–2 10–1 100 Err VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load Single Pulse Per unit base = R th(j – c)Q = 0.93°C/W Single Pulse Per unit base = Rth(j – c)F = 0.96°C/W Single Pulse Per unit base = Rth(j – c)F = 1.57°C/W FWDi FORWARD CURRENT IF (A) FWDi FORWARD VOLTAGE VFM (V) FWDi FORWARD VOLTAGE CHARACTERISTICS (Upper Arm · TYPICAL) FWDi REVERSE RECOVERY CHARACTERISTICS (Upper Arm · TYPICAL) FWDi FORWARD CURRENT IF (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) FWDi REVERSE RECOVERY LOSS CHARACTERISTICS (Upper Arm · TYPICAL) FWDi FORWARD CURRENT IF (A) REVERSE RECOVERY LOSS Err (mJ/Pulse) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART · Upper Arm) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART · Lower Arm) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c)