PM50B4L1C060 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 PM50B4L1C060 FEATURE a) Adopting new 5th generation Full-Gate CSTBT TM chip b) Error output signal is possible from all each protection upper and lower IGBT. c) The mounting surface is 90mm×50mm about 30% less than B4LA type

  • Monolithic gate drive & protection logic
  • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. APPLICATION Photo voltaic power conditioner PACKAGE OUTLINES Dimensions in mm 1. VUPC 2. UFo 3. UP 4. VUP1 5. VVPC 6. VFo 7. VP 8. VVP1 9. NC 10. NC 11. NC . NC 13. VNC 14. VN1 15. NC 16. UN 17. VN 18. NC 19. Fo Terminal code

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 INTERNAL FUNCTIONS BLOCK DIAGRAM MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage V D=15V, VCIN=15V 600 V IC T C=25°C 50 ICRM Collector Current Pulse 100 A Ptot Total Power Dissipation T C=25°C 168 W IE Emitter Current T C=25°C 50 IERM (Free wheeling Diode Forward current) Pulse 100 A Tj Junction Temperature -20 ~ +150 °C *: Tc measurement point is just under the chip. CONTROL PART Symbol Parameter Conditions Ratings Unit VD Supply Voltage Applied between : V UP1-VUPC, VVP1-VVPC,VN1-VNC 20 V VCIN Input Voltage Applied between : U P-VUPC, VP-VVPC, UN･VN-VNC 20 V VFO Fault Output Supply Voltage Applied between : U Fo-VUPC, VFo-VVPC, Fo-VNC 20 V IFO Fault Output Current Sink current at UFo, VFo, Fo terminals 20 mA VccFoINGND GND SC OT OUT VccFoINGND GND SC OT OUT VccFoINGND GND SC OT OUT VccFoINGND GND SC OT OUT 1.5k NC Fo VNC NC VN1 VN UN NC NC NC NC V VPC VUPC VP UPVVP1 VUP1 VFo UFo 1.5k 1.5k PUVWNB

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 TOTAL SYSTEM Symbol Parameter Conditions Ratings Unit VCC(PROT) Supply Voltage Protected by SC VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start 450 V VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V Tstg Storage Temperature -40 ~ +125 °C Visol Isolation Voltage 60Hz, Sinusoidal, RMS, Charged part to Base, AC 1min. 2500 V *: TC measurement point is just under the chip. THERMAL RESISTANCE Limits Symbol Parameter Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to case, IGBT (per 1 element) (Note.1) - - 0.74 Rth(j-c)D Thermal Resistance Junction to case, FWDi (per 1 element) (Note.1) - - 1.28 Rth(c-s) Contact Thermal Resistance Case to heat sink, (per 1 module) Thermal grease applied (Note.1) - 0.06 - K/W Note.1: If you use this value, Rth(s-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Limits Symbol Parameter Conditions Min. Typ. Max. Unit Tj=25°C - 2.2 2.7 VCEsat Collector-Emitter Saturation Voltage VD=15V, IC=50A VCIN= 0 V , P u l s e d ( F i g . 1 ) Tj=125°C - 2.2 2.7 V VEC Emitter-Collector Voltage I E=50A, VD=15V, VCIN= 1 5 V ( F i g . 2 ) - 2.4 3.3 V ton 0.1 0.5 1.2 trr - 0.1 0.2 tc(on) - 0.15 0.3 toff - 1.1 2.0 tc(off) Switching Time VD=15V, VCIN=0V←→15V VCC=300V, IC=50A Tj=125°C Inductive Load (Fig. 3,4) - 0.2 0.4 μs Tj=25°C - - 1 ICES Collector-Emitter Cut-off Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10 mA

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 CONTROL PART Limits Symbol Parameter Conditions Min. Typ. Max. Unit VN1-VNC - 6.5 12 ID Circuit Current V D=15V, VCIN=15V V*P1-V*PC - 1.6 4.0 mA Vth(ON) Input ON Threshold Voltage 1.2 1.5 1.8 Vth(OFF) Input OFF Threshold Voltage Applied between : UP-VUPC, VP-VVPC, UN･VN-VNC 1.7 2.0 2.3 V SC Short Circuit Trip Level -20 ≤Tj≤125°C, VD=15V (Fig. 3, 6) 75 - - A toff(SC) Short Circuit Current Delay Time VD=15V (Fig. 3, 6) - 0.2 - μs OT Trip level 135 - - OT(hys) Over Temperature Protection Detect Temperature of IGBT chip Hysteresis - 20 - °C UVt Trip level 11.5 12.0 12.5 UVr Supply Circuit Under-Voltage Protection -20≤Tj≤125°C Reset level - 12.5 - V IFO(H) - - 0.01 IFO(L) Fault Output Current V D=15V, VFO=15V (Note.2) - 10 15 mA tFO Fault Output Pulse Width V D=15V (Note.2) 1.0 1.8 - ms Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATINGS AND CHARACTERISTICS Limits Symbol Parameter Conditions Min. Typ. Max. Unit Mt Mounting Torque Mounting part screw : M4 1.4 1.65 1.9 N ・m m Weight - - 135 - g RECOMMENDED CONDITIONS FOR USE Symbol Parameter Conditions Recommended value Unit VCC Supply Voltage Applied across P-N terminals ≤ 450 V VD Control Supply Voltage Applied between : VUP1-VUPC, VVP1-VVPC,VN1-VNC (Note.3) 15.0±1.5 V VCIN(ON) Input ON Voltage ≤ 0.8 VCIN(OFF) Input OFF Voltage Applied between : UP-VUPC, VP-VVPC, UN･VN-VNC ≥ 9.0 V fPWM PWM Input Frequency Using App lication Circuit of Fig. 8 ≤ 20 kHz tdead Arm Shoot-through Blocking Time For IPM’s each input signals (Fig. 7) ≥ 2.0 μs IO Module Operating Current RMS ≤ 20 A Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (V D), the input terminals should be pulle d up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding prot ection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) Fig. 1 VCEsat Test Fig. 2 VEC Test Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform Fig. 5 ICES Test Fig. 6 SC test waveform Fig. 7 Dead time measurement point example Ic Vcc GND Fo IN U,V,(N) P,(U,V) VVD(all) Fo Vcin U,V P VD(all) N Ic Vcc Fo Vcin Vcc GND Fo IN Fo Vcin Vcc GND Fo IN VD(all) U,V P VD(all) N Ic Vcc Fo Vcin Vcc GND Fo IN Fo Vcin Vcc GND Fo IN VD(all) VCE A pulseFo Vcin Vcc GND Fo IN VD(all) P,(U,V) U,V,(N) P,(U,V) V IE Fo Vcin Vcc GND Fo IN VD(all) U,V,(N)

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ;

  • Design the PCB pattern to minimize wiring length between opto- coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
  • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
  • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.
  • Slow switching opto-coupler: CTR > 100%
  • Use 3 isolated control power supplies (V D). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
  • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Vcc Fo IN GND GND OUT OT SC Vcc Fo IN GND GND OUT OT SC Vcc Fo IN GND GND OUT OT SC Vcc Fo IN GND GND OUT OT SC Fo NC VNC VN1 VVPC VVP1 VUPC VUP1 UFo UP VFo VP UN VN P U V N B 1.5k 1.5k 1.5k NC NC NC NC VD1 VD2 VD3 20k ≥10µ≥0.1µ 20k ≥10µ≥0.1µ 20k ≥10µ≥0.1µ 20k ≥10µ≥0.1µ AC Output NC

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) INVERTER PART COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 35 40 45 50 55 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D) CHARACTERISTICS (TYPICAL) INVERTER PART FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) INVERTER PART COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V) 1.0 1.5 2.0 2.5 12 13 14 15 16 17 18 EMITTER CURRENT IE (A) 0 0.5 1 1.5 2 2.5 CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj=25°C VD=17V VD=15V VD=13V VD=15V Tj=25°C Tj=125°C Ic=50A Tj=25°C T j=125°C VD=15V Tj=25°C T j=125°C

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 SWITCHING TIME (t on, toff) CHARACTERISTICS (TYPICAL) INVERTER PART SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) INVERTER PART SWITCHING TIME ton, toff (μs) 0.1 11 0 1 0 0 SWITCHING TIME tc(on), tc(off) (μs) 0.01 0.1 11 0 1 0 0 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) INVERTER PART FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) INVERTER PART SWITCHING ENERGY Eon, Eoff (mJ/pulse) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 35 40 45 50 55 REVERSE RECOVERY TIME trr (μs) 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0 5 10 15 20 25 30 35 40 45 50 55 REVERSE RECOVERY CURRENT Irr (A) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load toff ton Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load tc(off) tc(on) Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load Eoff Eon Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load Irr trr

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) INVERTER PART I D VS. fc CHARACTERISTICS (TYPICAL) REVESE RECOVERY ENERGY Err (mJ/pulse) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 35 40 45 50 55 ID (mA) 0 5 10 15 20 25 EMITTER CURRENT IE (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) INVERTER PART UVt / UVr (V) -50 0 50 100 150 SC (SC of Tj=25°C is normalized 1) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 Tj (°C) Tj (°C) Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load VD=15V Tj=25°C Tj=125°C N side P side UVt UVr VD=15V

MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4L1C060 FLAT-BASE TYPE INSULATED PACKAGE Jan. 2011 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS INVERTER PART NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 0.001 0.01 0.1 TIME t (sec) Single Pulse IGBT Part; Per unit base: Rth(j-c)Q=0.74 K/W FWDi Part; Per unit base: Rth(j-c)D=1.28K/W