PM37LV512 PMC | Alldatasheet
Document overview
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Technical content
FEATURES
- Low Voltage Operation - Dual read V CC ranges: 2.7 V to 3.6 V or 4.5 V to 5.5 V - Program/Erase voltage: V CC - 2.7 V to 3.6 V and V PP - 11.5 V to 12.5 V
- High Performance Read - 70 ns access time Electrical Chip Erase and Byte Program Using EPROM Programmer - Maximum 20 µs/byte programming - Maximum 100 ms chip erase - Do not require UV erase Low Power Consumption - Typical 5 mA active read current - Typical 18 µA CMOS standby current Excellent Product Reliablity - Guarantee minimum 1,000 program/erase cycles - Minimum 20 years data retention JEDEC Standard Byte-wide Flash Memory Pin-out Industrial Standard Packaging - 32-pin PLCC - 32-pin PDIP - 32-pin VSOP GENERAL DESCRIPTION The Pm37LV512 is a 512 Kbit, Multiple-Cycle-Programmable Read-Only-Memory (MCP ROM) organized as 65,563 bytes of 8 bits each. The program and erase operation of device can be done on EPROM programmers by applying
3.0 Volt V
and 12.0 Volt V PP to A9 and/or OE# pin. This eliminates the need of a UV-Source for erase operation compatible to either 3.0 Volt or 5.0 Volt systems. The dual read operation ranges can greatly increase application flexibility for users. The device has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible pin- out. For applications that do not require in-system-programming (ISP) function for firmwire upgrade, the Pm37LV512 offers a direct cost reduction path for Flash memory, i.e. Pm39LV512, without modifying the schematic and board layout of system. The Pm37LV512 is manufactured on PMC’s advanced nonvolatile CMOS technology, P-FLASH™. The device is offered in 32-pin PLCC, VSOP and PDIP packages with access time of 70 ns. PMC
512 Kbit (64K X 8) Dual-Voltage Multiple-Cycle-Programmable ROM
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev:1.3 Pm37LV512
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 CONNECTION DIAGRAMS LOGIC SYMBOL A0-A15 I/O0-I/O7 CE# OE# WE# 32-Pin PLCC 20191817161514 12343 2 3 1 3 0 A12 A15 NC V CC WE# NC I/O1 GND I/O2 I/O3 I/O4 I/O5 I/O6 I/O0 A7 29 A14 A13 A11 OE# A10 CE# I/O7 NC 32-Pin PDIP NC NC A15 A12 I/O0 I/O1 I/O2 GND V CC WE# NC A14 A13 OE# A10 A11 CE# I/O7 I/O6 I/O5 I/O4 I/O3 A11 A13 A14 NC WE# V CC NC NC A15 A12 32-Pin VSOP I/O4 OE# A10 CE# I/O7 I/O6 I/O5 I/O3 GND I/O2 I/O1 I/O0
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 PRODUCT ORDERING INFORMATION Pm37L V512 -70 J C Temperature Range C = Commercial (0°C to +70°C) Package Type J = 32-pin Plastic J-Leaded Chip Carrier (32J) P = 32-pin Plastic DIP (32P) V = 32-pin Thin Small Outline Package (32V) Speed Option PMC Device Number rebmuNtraP t CCA )sn( egakcaPe gnaRerutarepmeT CJ07-215VL73mP J23 laicremmoC )C°07+otC°0( CP07-215VL73mPP 23 laicremmoC )C°07+otC°0( CV07-215VL73mPV 23 laicremmoC )C°07+otC°0(
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 PIN DESCRIPTIONS LOBMYSE PYTN OITPIRCSED 51A-0AT UPNI yllanretnierasesserddA.tupnisesserddayromemroF:stupnIsserddA .elcycetirwagnirud#EWfoegdegnillafehtnodehctal #ECT UPNI rofseirtiucriclanretnis'ecivedehtsetavitcawolseog#EC:elbanEpihC otnisehctiwsdnaecivedehtstcelesedhgihseog#EC.noitarepoecived .noitpmusnocrewopehtecuderotedomybdnats #EWT UPNI .wolevitcasi#EW.noitarepoetirwrofecivedehtetavitcA:elbanEetirW #EOT UPNI #EO.elcycdaeragnirudsreffubtuptuos'ecivedehtlortnoC:elbanEtuptuO .wolevitcasi 7O/I-0O/I /TUPNI TUPTUO atadtuptuoroelcycetirwagnirudatad/dnammoctupnI:stuptuO/stupnIataD .delbasidera#EOnehwetats-irtottaolfsnipO/IehT.elcycdaeragnirud V CC ylppuSrewoPeciveD DNGd nuorG CNn oitcennoCoN
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 BLOCK DIAGRAM PRODUCT IDENTIFICATION The hardware product identification mode can be used by an EPROM programmer to identify the device and manufacturer for selecting the right programming algo- rithm for the device. The product identification mode is activated by applying 12.0 Volt on A9 pin. For details, please see Bus Operation Modes in Table 1. WE# CE# OE# COMMAND REGISTER CE,OE LOGIC A0-A15 I/O0-I/O7 I/O BUFFERS DATA LATCH SENSE AMP Y-GATING MEMORY ARRAY ADDRESS LATCH Y-DECODER X-DECODER BYTE PROGRAMMING The Pm37LV512 is programmed by using an external EPROM programmer. The programming mode is acti- vated by applying 12.0 Volt on OE# pin and V IL on CE# pin. The byte program operation is completed by assert- ing WE# to low for 20 µs. A chip erase operation is required prior to program due to a data “0” can not be programmed back to a “1” and only erase operation can convert “0”s to “1”s. The entire chip can be programmed byte-by-byte by using the byte program algorithmm. Re- fer to Chart 1. Byte Programming Flowchart and Byte Program Operations AC Waveforms. DEVICE OPERA TION READ OPERATION The access of Pm37LV512 is similar as that of EPROM or Flash Memory. To obtain data at the outputs, three control functions must be satisfied: CE# is the chip enable and should be pulled low ( V IL ). OE# is the output enable and should be pulled low ( VIL). WE# is the write enable and should remains high ( VIH ). CHIP ERASE The entire memory array can be erased through a chip erase operation on an external EPROM programmer. Pre-program the “1”s cells in the device is not required prior to chip erase operation. The chip erase operation is activated by applying 12.0 Volt to OE# and A9 pins while CE# pin is low. All other address and data pins are “don’t care”. Chip erase is completed by asserting WE# pin to low for 100 ms. The falling edge of WE# will start the chip erase operation. The device will return back to standby mode after the completion of chip erase. Refer to Chart 2. Chip Erase Flowchart and Chip Erase Operations AC Waveforms.
- X can be VIL, VIH or addresses.
Table 1. Bus Operation Modes
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 DEVICE OPERATIONS FLOWCHARTS BYTE PROGRAMMING Chart 1. Byte Programming Flowchart Start OE# = V H Address = First Location; Load Data CE# = V IL Last Address? Wait T RT Recovery Time No Yes Yes OE# = V IL Program 20 µs pulse (WE# = V IL) Read Device Compare all bytes to original data PassFailed Increment Address No
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 CHIP ERASE Chart 2. Chip Erase Flowchart DEVICE OPERATIONS FLOWCHARTS (CONTINUED) A9 = V H ; OE# = V H Start Yes No CE# = V IL Wait T RT Recovery Time OE#/A9 = V IL or VIH WE# = V IH Erase 100 ms pulse (WE# = V IL) Read Device Compare all bytes to FF PassFail
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 saiBrednUerutarepmeT C°521+otC°56- erutarepmeTegarotS C°521+otC°56- erutarepmeTgniredloSdaeLtnuoMecafruS sdnoceS3C°042 nip9Adna#EOtpecxesniPllAnodnuorGottcepseRhtiwegatloVtupnI )2( VotV5.0- CC V5.0+ nip9Adna#EOnodnuorGottcepseRhtiwegatloVtupnI )3( V0.31+otV5.0- dnuorGottcepseRhtiwegatloVtuptuOllA VotV5.0- CC V5.0+ V CC )2( V0.6+otV5.0- DC AND AC OPERATING RANGE rebmuNtraP 215VL73mP erutarepmeTgnitarepO C°07otC°0 esarE/margorP V CC V6.3-V7.2 V PP V5.21-V5.11 daeRV CC V5.5-V5.4roV6.3-V7.2 ABSOLUTE MAXIMUM RATINGS (1) Notes: 1. Stresses under those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. The functional operation of the device or any other conditions under those indicated in the operational sections of this specifica- tion is not implied. Exposure to absolute maximum rating condition for extended periods may affected device reliability. 2. Maximum DC voltage on input or I/O pins are V CC + 0.5 V. During voltage transitioning period, input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns. Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O pins may undershoot GND to -2.0 V for a period of time up to 20 ns. 3. Maximum DC voltage on OE# and A9 pin is +13.0 V. During voltage transitioning period, OE# and A9 pin may overshoot to +14.0 V for a period of time up to 20 ns. Minimum DC voltage on OE# and A9 pin is -0.5 V. During voltage transitioning period, OE# and A9 pin may undershoot GND to -2.0 V for a period of time up to 20 ns.
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 DC CHARACTERISTICS lobmySr etemaraPn oitidnoCn iMp yTx aMs tinU IIL tnerruCdaoLtupnIV NI VotV0= CC 1A µ IOL tnerruCegakaeLtuptuOV O/I VotV0= CC 1A µ I 1BS V CC SOMCtnerruCybdnatSV =#EO,#EC CC V3.0±8 10 01A µ I 2BS V CC LTTtnerruCybdnatSV =#EC HI Vot CC 10.03 A m I 1CC V CC tnerruCdaeRevitcAI ;zHM5=f TUO Am0=5 5 1A m V LI egatloVwoLtupnI5 .0-8 .0V V HI egatloVhgiHtupnIV 7.0 CC V CC 3.0+V V LO egatloVwoLtuptuO ILO V;Am1.2= CC V= CC nim 54.0V V HO egatloVhgiHtuptuO IHO 001-= µ V;A CC V= CC nim V CC 2.0-V READ OPERATIONS CHARACTERISTICS AC CHARACTERISTICS lobmySr etemaraP 07-215VL73mP stinU niMx aM tCR emiTelcyCdaeR0 7s n t CCA yaleDtuptuOotsserddA0 7s n tEC yaleDtuptuOot#EC0 7s n tEO yaleDtuptuOot#EO5 3s n tFD ZhgiHtuptuOot#EOro#EC0 0 2s n tHO ,sserddAro#EC,#EOmorfdloHtuptuO tsrifderuccorevehcihw 0s n t SCV V CC emiTpu-teS0 5s µ
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 OUTPUT TEST LOAD INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL AC CHARACTERISTICS (CONTINUED) PIN CAPACITANCE ( f = 1 MHz, T = 25°C ) pyTx aMs tinUs noitidnoC C NI 46 F pV NI V0= C TUO 82 1F pV TUO V0= Note: These parameters are characterized but not 100% tested. 3.3 V 1.8 K 1.3 K OUTPUT PIN 100 pF 3.0 V 0.0 V 1.5 V AC Measurement Level Input ADDRESS VALID tRC tACC tCE tOE tDF tOH OUTPUT VALID HIGH Z ADDRESS CE# OE# WE# OUTPUT V CC tVCS READ OPERATIONS AC WAVEFORMS
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 WRITE (PROGRAM/ERASE) OPERATIONS CHARACTERISTICS lobmySr etemaraP 07-215VL73mP stinU niMx aM tSA emiTpu-teSsserddA0 s n tHA emiTdloHsserddA0 3s n t SEC emiTpu-teS#EC0 s n t HEC emiTdloH#EC0 s n tSD emiTpu-teSataD0 4s n tHD emiTdloHataD0 s n t TRO esarEdnamargorProfemiTesiR#EO1 s n t SEO esarEdnamargorProfemiTputeS#EO1 s n t HEO esarEdnamargorProfemiTdloH#EO1 s n tWP htdiWesluPmargorP#EW0 2s µ tWE htdiWesluPesarE#EW 001s m t TR esarErofemiTyrevoceR9A/#EO1 s n t TRA A9 esarEgnirudV21otemiTesiR1 s n t S9A A9 esarEgnirudemiTputeS1 s m t H9A A9 esarEgnirudemiTdloH1 s m AC CHARACTERISTICS (CONTINUED)
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 AC CHARACTERISTICS (CONTINUED) ADDRESS (Except A9) CE# DATA IN V H V CC V SS V H V CC V SS OE# WE# tOES tA9S tCES tCEH tA9H tOEH tRT tORT tART tEW CHIP ERASE OPERATIONS AC WAVEFORMS ADDRESS VALID DATA VALID ADDRESS CE# DATA IN OE# WE# HIGH-Z V H V CC V SS tAS tAH tCEH tDH tPW tOEH tCES tOES tORT tDS BYTE PROGRAM OPERATIONS AC WAVEFORMS
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 AC CHARACTERISTICS (CONTINUED) retemaraPn iMt inUd ohteMtseT ecnarudnE0 00,1s elcyC7 11AdradnatSCEDEJ noitneteRataD0 2s raeY3 01AdradnatSCEDEJ ledoMydoBnamuH-DSE0 00,2s tloV4 11AdradnatSCEDEJ ledoMenihcaM-DSE0 02s tloV5 11AdradnatSCEDEJ pU-hctaL I+001 1CC Am8 7dradnatSCEDEJ Note: These parameters are characterized but not 100% tested. RELIABILITY CHARACTERISTICS
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 PACKAGE TYPE INFORMATION 32J 32-Pin Plastic Leaded Chip Carrier Dimensions in Inches (Millimeters) Pin 1 I.D. .585(14.86) .595(15.11) .547(13.89) .553(14.05) .050 REF..026(.66) .032(.81) .447(11.35) .453(11.51) .485(12.32) .495(12.51) 025(.635)X30 ° .400 REF. .510(12.95) .530(13.46) .013(.33) .021(.53) .009 .015.076(1.93) .095(2.41) .123(3.12) .140(3.56) SEATING PLANE 32P 32-Pin Plastic DIP Dimensions in Inches (Millimeters) 1.640(41.7) 1.680(42.7) 1732 Pin 1 I.D. .537(13.64) .557(14.05) .040(1.02) .065(1.65) .005(.127) MIN .600(15.24) .625(15.88) .008(0.20) .013(0.33) 10 ° .625(15.88) .665(16.89) SEATING PLANE .120(3.05) .160(4.07) .090(2.29) .146(3.71) .162(4.11)
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 PACKAGE TYPE INFORMA TION (CONTINUED) 32V 32-Pin Thin Small Outline Package (TSOP 8mm x 14mm)(Millimeters) Pin 1 I.D. .484(12.30) .492(12.50) .543(13.80) .560(14.20) .315(7.90) .319(8.10) .020(0.05) BSC .037(.95) .041(1.05 .006(.16) .011(,27) .020(.05) .006(.15) .047(1.20) MAX .010(.25) .004(.10) .008(.20) .020(.50) .028(.70)
Programmable Microelectronics Corp. Issue Date: Dec, 2002 Rev: 1.3 PMC Pm37LV512 REVISION HISTOR Y etaD. oNnoisiveRs egnahCfonoitpircseD. oNegaP 2002,hcraM0 .1n oitacilbupweNl lA 2002,yaM1 .1 noitpircsedlarenegdnaserutaefdesiveR1 edargdeepssn09devomeR2 1,01,3 sedomnoitareposubdesiveR6 sgnitarmumixametulosbadesiveR9 IdesiveR 1BS noitacificeps0 1 noitarepoesare/margorpdesiveR smrofevawdnascitsiretcarahc 31,21 2002,enuJ2 .1 nipPIDPniP-23niopytehtdetcerroC noitcennoc 2 TfoopytehtdetcerroC TR etyBniemityrevocer trahcwolFgnimmargorP 7 2002.ceD3 .1. cepsegakcapPOSVniP-23deddA6 1,3,2,1