PM300CLA120

PM300CLA120_05 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM.

• 3 φ 300A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (Fo available from all arm devices)
• Acoustic noise-less 45kW/55kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 35.5 36.6 12 11 10 9 8 7 12 34 56 9.08 21 3-2.54 53.75 50 53.75 31.84 3-2.543.22 21 3-2.54 31.84 3-2.543.22 21 3-2.54 31.84 3-2.543.22 162 172 50±0.56 14 22 28 22 2228 50±0.5 50±0.5 8-φ5.5 MOUNTING HOLES 6-φ2.5 12-M6 NUTS 94.5 7.75 3.75(15.5) 150 137 123 110±0.5 13.5 5.5 6.5 24- 0.64 (SCREWING DEPTH) LABEL (24)2 8-φ3.5 +1.0 –0.5 1. N 2. P 3. N 4. P 5. N 6. P 7. W 8. W 9. V 10. V 11. U 12. U 13. VUPC 14. UPFO 15. UP 16. VUP1 17. VUNC 18. UNFO 19. UN 20. VUN1 21. VVPC 22. VPFO 23. VP 24. VVP1 25. VVNC 26. VNFO 27. VN 28. VVN1 29. VWPC 30. WPFO 31. WP 32. VWP1 33. VWNC 34. WNFO 35. WN 36. VWN1 Terminal code

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 1200 300 600 1562 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM UN V UN1 UNFOVUNC UP V UP1 UPFOVUPC VN V VN1 VNFOVVNC VP V VP1 VPFOVVPC WN V WN1 WNFOVWNC WP V WP1 WPFOVWPC NU P Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc NV P Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc NW P Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc CONTROL PART VFO IFO V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC VUN1-VUNC, VVN1-VVNC, VWN1-VWNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC Applied between : UPFO-VUPC, VPFO-VVPC, WPFO-VWPC UNFO-VUNC, VNFO-VVNC, WNFO-VWNC Sink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFO terminals VD VCIN V V

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition V CC(surge) Tstg Viso Ratings VCC(PROT) 800 1000 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. TOTAL SYSTEM 0.08 0.13 0.014 °C/W Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT (per 1 element) (Note-1) Inverter FWDi (per 1 element) (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance Parameter Limits Typ. Max. (Note-1) Tc measurement point is just under the chip. If you use this value, R th(f-a) should be measured just under the chips. UP IGBT 30.1 89.4 VP WP UN VN WN FWDi 19.2 89.4 IGBT 80.1 89.4 FWDi 69.2 89.4 IGBT 130.1 89.4 FWDi 119.2 89.4 IGBT 19.8 20.6 FWDi 30.7 20.6 IGBT 69.8 20.6 FWDi 80.7 20.6 IGBT 119.8 20.6 FWDi 130.7 20.6 arm axis X Y 2.3 2.4 3.9 2.5 0.8 1.0 3.5 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 300A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.5 1.8 1.9 2.8 1.0 0.5 0.4 2.3 0.7 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔ 15V VCC = 600V, IC = 300A Tj = 125°C Inductive Load (Fig. 3, 4) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, IC = 300A VCIN = 0V (Fig. 1) V mA V µs Unit (Unit : mm)Table 1: TC (under the chip) measurement point is below. Name plate side Bottom view Y X

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 VD = 15V Detect Tj of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-2) VD = 15V (Note-2) VD = 15V (Fig. 3,6) 4.5 3.5 Main terminal screw : M6 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Condition Unit N • m N • m g Limits Min. Typ. Max. 3.5 2.5 4.0 3.0 1250 MECHANICAL RATINGS AND CHARACTERISTICS VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC ID µs V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 600 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 0.2 145 125 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operat e to protect it. V V*N1-V*NC V*P1-V*PC A RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC VUN1-VUNC, VVN1-VVNC, VWN1-VWNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC Using Application Circuit of Fig. 8 For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 800 15 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 ≥ 3.0 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V (Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) 10% 90% trr Irr trtd(on) tc(on) tc(off) td(off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td(on) + tr) (toff= td(off) + tf) VD (all) IN Fo Fo Fo IN Fo VD (all) VCIN (0V) IcV VVCIN (15V) –Ic CS CS Vcc Vcc Ic IcVD (all) VD (all) VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform Fig. 1 VCE(sat) Test Fig. 2 V EC Test a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching VCIN Fig. 7 Dead time measurement point example Fig. 5 ICES Test Fig. 6 SC test waveform SC Short Circuit Current toff(SC) VD (all) U,V,W, (N) P, (U,V,W) A Pulse VCEVCIN (15V) Ic Fo IN Fo 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal V CIN (Upper Arm) IPM’ input signal V CIN (Lower Arm) Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. : Interface which is the same as the U-phase Fig. 8 Application Example Circuit OUT Si OT OT OT GNDGND In Vcc U N V N P P W N P M IF OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc Fo Fo Fo VVP1 VP VVPC 1.5k 1.5k 1.5k VUN1 UN VUNC 20k ≥10µ ≥0.1µ UNFO VPFO UPFO VUP1 UP VUPC VD OT OUT Si GNDGND In Vcc Fo VVN1 VN VVNC 1.5kVNFO VD OT OUT Si GNDGND In Vcc Fo VWP1 WP VWPC 1.5kWPFO VD OT OUT Si GNDGND In Vcc Fo VWN1 WN VWNC 1.5kWNFO VD VD VD

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 PERFORMANCE CURVES 100 102 101 23 5 7 102 101 23 5 7 103 400 320 240 160 00 10.5 1.5 2.5 2 2.5 1.5 0.5 00 16080 240 400 320 Tj = 25°C VD = 15V Tj = 25°C Tj = 125°C 2.5 1.5 0.5 0 181312 15 14 17 16 10–1 101 101 23 5 7 102 100 23 5 7 103 10–1 101 101 23 5 7 102 100 23 5 7 103 tc(off) tc(on) toff ton IC = 300A Tj = 25°C Tj = 125°C VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load 15V 13V VD = 17V ESW(off) ESW(on) VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load ESW(on) ESW(off) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) SWITCHING TIME ton, toff (µs) COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 101 103 102 0.5 1 1.5 2 3 2.5 VD = 15V Tj = 25°C Tj = 125°C 101 23 5 7 102 23 5 7 10344 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–110–523 5 7 10–423 5 7 23 5 7 100 23 5 7 101 Single Pulse Per unit base = Rth(j – c)Q = 0.08°C/W 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–110–523 5 7 10–42 3 57 2 3 57 100 23 5 7 101 Single Pulse Per unit base = Rth(j – c)F = 0.13°C/W 10–2 101 10–1 100 100 103 101 102 Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V trr Irr 250 51 0 1 5 2 0 ID VS. fc CHARACTERISTICS (TYPICAL) CIRCUIT CURRENT ID (mA) CARRIER FREQUENCY fc (kHz) P-side or N-side V D = 15V Tj = 25°C COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TIME (s)