PM25RL1A120

PM25RL1A120 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE PM25RL1A120 FEATURE Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip sur- face temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection up- per and lower arm of IPM. d) Compatible L-series package.

• 3 φ 25A, 1200V Current-sense and temperature sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-F O available from upper arm devices)
• UL Recognized APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 106 19.75 66.5 3.25 16 15.25 2-φ5.5 6-M5 NUTS MOUNTING HOLES 6-23-23-23-2 B NP UV W 10.75 (7) (SCREWING DEPTH) 19-■0.5 32.75 23 23 23 3.15 27.5 (13.5) 17.5 17.5 (19.75) 14.5 1616 120 LABEL 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. Br 16. UN 17. VN 18. WN 19. Fo 159 1 3 1 9 22 + – 1 0.5 2-φ2.5 Terminal code 11.75

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C (Note-1) TC = 25°C TC = 25°C (Note-1) V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 1200 128 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VCES IC ICP PC IF VR(DC) Tj BRAKE PART Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature VD = 15V, VCIN = 15V TC = 25°C (Note-1) TC = 25°C TC = 25°C (Note-1) TC = 25°C TC = 25°C V A A W A V Symbol Parameter Condition Ratings Unit 1200 128 1200 –20 ~ +150 V FO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals VD VCIN V V VN UN WP VWP1 WFOVWPC VP VVP1 VFOVVPC UP VUP1 UFOVUPCBr BN W V U P Fo 1.5k 1.5k 1.5k 1.5k VNC VN1WN Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT *: TC measurement point is just under the chip.

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition V CC(surge) Tstg Viso Ratings VCC(PROT) 800 1000 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2.15 2.35 3.3 2.0 0.8 1.0 2.8 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 25A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.3 1.65 1.85 2.3 0.8 0.3 0.4 1.2 0.4 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔15V VCC = 600V, IC = 25A Tj = 125°C Inductive Load (Fig. 3,4) VCE = VCES, VD = 15V (Fig. 5) VD = 15V, IC = 25A VCIN = 0V, Pulsed (Fig. 1) TOTAL SYSTEM V mA V µs Unit 0.97 1.60 0.97 1.60 0.038 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT part (per 1 element) (Note-1) Inverter FWDi part (per 1 element) (Note-1) Brake IGBT part (Note-1) Brake FWDi upper part (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-1) T C (under the chip) measurement point is below. Parameter Limits Typ. Max. UP IGBT 27.0 –7.0 VP WP UN VN WN BR FWDi 27.0 –0.2 IGBT 66.9 –6.0 FWDi 66.9 0.8 IGBT 86.5 –6.0 FWDi 86.5 0.8 IGBT 39.2 4.0 FWDi 33.2 4.8 IGBT 54.3 4.0 FWDi 60.7 4.8 IGBT 73.9 4.0 FWDi 80.3 4.8 IGBT 20.0 –7.0 Di 21.8 5.8 arm axis X Y (unit : mm) Bottom view * If you use this value, R th(f-a) should be measured just under the chips.

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 Detect Temperature of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VCIN = 15V (Note-2) VD = 15V (Note-2) 3.5 3.5 Mounting part screw : M5 Main terminal part screw : M5 Symbol Parameter Mounting torque Weight Condition Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 380 MECHANICAL RATINGS AND CHARACTERISTICS VCE(sat) ICES VFM V mA Min. Typ. Max. V Collector-Emitter Saturation Voltage Forward Voltage Collector-Emitter Cutoff Current I F = 25A Tj = 25°C Tj = 125°C UnitParameterSymbol Condition Limits 2.15 2.35 3.3 1.65 1.85 2.3 T j = 25°C Tj = 125°C BRAKE PART VD = 15V, IC = 25A VCIN = 0V, Pulsed (Fig. 1) VCE = VCES, VD = 15V (Fig. 5) VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC ID V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) SC toff(SC) OT OT(hys) UV UV r IFO(H) IFO(L) tFO Trip level Hysteresis Trip level Reset level CONTROL PART 1.2 1.7 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 0.2 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operat e to protect it. V µs VN1-VNC V*P1-V*PC Inverter part Brake part A–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) VD = 15V (Fig. 3,6) RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC Using Application Circuit of Fig. 8 Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency ≤ 800 15.0 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 VCC VCIN(ON) VCIN(OFF) fPWM VD V V kHz (Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak tdead Arm Shoot-through Blocking Time For IPM’s each input signals (Fig. 7) ≥ 2.5 µs ≤ ± 5V/µs ≤ 2V GND 15V

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (V D), the input terminals should be pulled up by resistors, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) U,V,W,B, (N) U,V,W,B, (N)VD (all) IN Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W,B) VCIN (15V) –Ic Fig. 7 Dead time measurement point example Fig. 1 VCE(sat) Test Fig. 2 V EC, (VFM) Test 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal V CIN (Upper Arm) IPM’ input signal V CIN (Lower Arm) 10% 90% trr Irr trtd(on) tc(on) tc(off) td(off) VCIN Ic VCE 10%10% 10% 90% tf (ton = td(on) + tr) (toff = td(off) + tf) Fo Fo Fo P N N CS CS U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching VCIN Fig. 5 ICES Test Fig. 6 SC Test Waveform SC Trip Short Circuit Current toff(SC) VD (all) U,V,W,B, (N) P, (U,V,W,B) A Pulse VCEVCIN (15V) Ic Fo IN Fo Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT Si OT OT OT OT OT OT OT GNDGND In Vcc U V W B N P M IF : Interface which is the same as the U-phase OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Fo Fo Fo Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC UN VN VN1 WN VNC 1.5k 1.5k 1.5k 1.5kFo VVP1 VP VVPC ≥0.1µ 4.7k ≥0.1µ ≥0.1µ 20k 20k 20k ≥10µ ≥10µ ≥10µ 20k ≥10µ ≥0.1µ VFo WFo UFo VUP1 UP VUPC Br IF IF IF IF → OUT Si GNDGND In Fo Vcc VD VD VD VD Fig. 8 Application Example Circuit

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 5 10 15 20 25 30 35 100 10123 4 5 7 10223 4 5 7 10–1 100 101 10–1 100 101 100 100 101 102 10123 4 5 7 10223 4 5 7 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 12 13 14 15 16 17 18 Tj = 25°C 13V VD = 17V VD = 15V Tj = 25°C Tj = 125°C VD = 15V Tj = 25°C Tj = 125°C IC = 25A Tj = 25°C Tj = 125°C ton toff VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load tc(on) tc(off) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) CONTROL POWER SUPPLY VOLTAGE VD (V) COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) SWITCHING TIME ton, toff (µs) SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) 15V PERFORMANCE CURVES (Inverter Part)

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 5.0 10.0 15.0 20.0 25.0 30.0 35.0 5 10 15 20 25 N-side P-side VD = 15V Tj = 25°C Tj = 125°C fc (kHz) ID VS. fc CHARACTERISTICS (TYPICAL) ID (mA) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 4.0 8.0 12.0 16.0 20.0 2.0 6.0 10.0 14.0 18.0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Eon Eoff VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load trr Irr VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VD = 15V –50 0 50 100 150 –50 0 50 100 150 UVt UVr COLLECTOR CURRENT IC (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS Eon, Eoff (mJ/pulse) COLLECTOR REVERSE CURRENT –IC (A) SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS Err (mJ/pulse) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR REVERSE CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) Tj (°C) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) UVt /UVr Tj (°C) SC

MITSUBISHI <INTELLIGENT POWER MODULES> PM25RL1A120 FLAT-BASE TYPE INSULATED PACKAGE May 2009 23 5710–323 5723 57 10–4 23 57 10123 57 10010–123 5710–210–5 10–2 10–3 10–1 100 23 5710–323 5723 57 10–4 23 57 10123 57 10010–123 5710–210–5 10–2 10–3 10–1 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) t(sec) Single Pulse IGBT part; Per unit base = Rth(j-c)Q = 0.97°C/W FWDi part; Per unit base = Rth(j-c)F = 1.60°C/W 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 5 10 15 20 25 30 35 100 101 102 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 12 13 14 15 16 17 18 Tj = 25°C 13V VD = 17V VD = 15V Tj = 25°C Tj = 125°C VD = 15V Tj = 25°C Tj = 125°C IC = 25A Tj = 25°C Tj = 125°C OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) CONTROL POWER SUPPLY VOLTAGE VD (V) COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) 15V TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) t(sec) Single Pulse IGBT part; Per unit base = Rth(j-c)Q = 0.97°C/W FWDi part; Per unit base = Rth(j-c)F = 1.60°C/W (Brake Part)