PM25CLB120

PM25CLB120_05 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLB120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM.

• 3 φ 25A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 7.75 98.25 2.5 232323 19.5 25.7525 19-I 0.5 9.5 11.5 27.5 9.5 1.5 1.52-φ2.5 106 ±0.25 66.519.75 3.25 444 44 44 4 16 15.25 6-23-23-23-2 1616 120 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. NC 16. UN 17. VN 18. WN 19. Fo Terminal code NP BUV W 91 3 1 9 4-φ2.5 MOUNTING HOLES 2-φ5.5

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 1200 150 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VFO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : U FO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals VD VCIN V V VN UN WP VWP1 WFOVWPC VP VVP1 VFOVVPC UP VUP1 UFOVUPCNC NC N W V U P Fo 1.5k 1.5k 1.5k 1.5k VNC VN1WN Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 UP IGBT 29.0 –7.1 VP WP UN VN WN FWDi 29.3 1.5 IGBT 65.0 –7.1 FWDi 65.5 2.0 IGBT 85.6 –7.1 FWDi 85.9 2.0 IGBT 37.8 5.1 FWDi 37.5 –4.5 IGBT 55.2 5.1 FWDi 55.7 –4.5 IGBT 75.8 5.1 FWDi 75.3 –4.5 arm axis X Y (Unit : mm) 2.3 2.4 3.5 2.5 0.8 1.0 3.0 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 25A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.5 1.8 1.9 2.5 1.0 0.5 0.4 2.0 0.7 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔ 15V VCC = 600V, IC = 25A Tj = 125°C Inductive Load (Fig. 3,4) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, IC = 25A VCIN = 0V (Fig. 1) V mA V µs Unit * If you use this value, R th(f-a) should be measured just under the chips. (Note-1) T C (under the chip) measurement point is below. Bottom view 0.83* 1.36* 0.038 °C/W Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT (per 1 element) (Note-1) Inverter FWDi (per 1 element) (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance Parameter Limits Typ. Max. ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition VCC(surge) Tstg Viso Ratings VCC(PROT) 800 1000 –40 ~ +125 2500 Unit V Vrms VVD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. TOTAL SYSTEM

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 VD = 15V Detect Tj of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-2) VD = 15V (Note-2) VD = 15V (Fig. 3,6) 3.5 Mounting part screw : M5 Symbol Parameter Mounting torque Weight Condition Unit N • m g Limits Min. Typ. Max. 2.5 3.0 340 MECHANICAL RATINGS AND CHARACTERISTICS VD = 15V, VCIN = 15V Applied between : U P-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC ID µs V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) SC toff(SC) OT OTr UV UV r IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 0.2 145 125 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operat e to protect it. V VN1-VNC V*P1-V*PC A RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : U P-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 800 15.0 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 ≥ 2.5 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V V kHz µs (Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above V CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) 10% 90% trr Irr trtd (on) tc (on) tc (off) td (off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td (on) + tr) (toff= td (off) + tf) P, (U,V,W) U,V,W, (N) U,V,W, (N)VD (all) IN Fo Fo Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic P N N CS CS U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform Fig. 1 VCE(sat) Test Fig. 2 V EC Test a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching VCIN Fig. 7 Dead time measurement point example Fig. 5 ICES Test Fig. 6 SC test waveform SC Short Circuit Current toff(SC) VD (all) U,V,W, (N) P, (U,V,W) A Pulse VCEVCIN (15V) Ic Fo IN Fo 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal V CIN (Upper Arm) IPM’ input signal V CIN (Lower Arm) Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. : Interface which is the same as the U-phase Fig. 8 Application Example Circuit OUT Si OT OT OT OT OT OT GNDGND In Vcc U V W NC N P M IF OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Fo Fo Fo Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC UN VN VN1 WN VNC 1.5k 1.5k 1.5k 1.5kFo VVP1 VP VVPC ≥0.1µ ≥0.1µ ≥0.1µ 20k 20k 20k ≥10µ ≥10µ ≥10µ 20k ≥10µ ≥0.1µ VFo WFo UFo VUP1 UP VUPC NC IF IF IF VD VD VD VD

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 00 10.5 1.5 2 Tj = 25°C 1.5 0.5 00 10 20 30 VD = 15V Tj = 25°C Tj = 125°C 1.5 0.5 0 181312 15 14 17 16 10–1 SWITCHING TIME ton, toff (µs) COLLECTOR CURRENT IC (A) 101 100 23 5 7 101 100 23 5 7 102 10–1 COLLECTOR CURRENT IC (A) 101 100 23 5 7 101 100 23 5 7 102 tc(off) tc(on) toff ton IC = 25A Tj = 25°C Tj = 125°C VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load 10–1 101 100 23 5 7 101 100 23 5 7 102 ESW(off) ESW(off)ESW(off) ESW(on) ESW(on) ESW(on) VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load 15V 13V VD = 17V COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (INVERTER PART · TYPICAL) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 fc (kHz) 0 250 51 0 1 5 2 0 VD = 15V Tj = 25°C N-side P-side COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (INVERTER PART · TYPICAL) 100 ID VS. fc CHARACTERISTICS (TYPICAL) ID (mA) 102 101 0.5 1 1.5 2 2.5 VD = 15V Tj = 25°C Tj = 125°C DIODE REVERSE RECOVERY CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) 10–2 100 100 23 5 7 101 10–1 23 5 7 102 100 102 101 trr Irr Irr VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–110–523 5 7 10–423 5 7 23 5 7 100 23 5 7 101 TIME (s) Single Pulse IGBT Part; Per unit base = R th(j – c)Q = 0.83°C/W FWDi Part; Per unit base = R th(j – c)F = 1.36°C/W