PM200RSE060

PM200RSE060_05 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE PM200RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3 φ 200A, 600V Current-sense IGBT for 15kHz switching
• 75A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 22kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 16.5 135 24.1 510.6 11.6 MOUNTING HOLES 39.7 3.22 10.16 10.16 10.16 2-2.54 2-2.54 3.22 2-2.54 2-2.54 6-2.54 67.4 74.4 202039.5 123 456 789 1 0 95.5 ±0.5 110 ±1 120.5 LABEL 4- φ5.5 φ2.54 2-φ2.54 16- 0.64 ±0.5 51.5 A 10.5 21.3 33.7 34.7 4-R6 6-M5 NUTS 0.5 ±0.3 24.1 –0.5 +1.0 U P N B PPS VW 0.64 A : DETAIL 1. VUPC 2. UP 3. VUP1 4. VVPC 5. VP 6. VVP1 7. VWPC 8. WP 9. VWP1 10. VNC 11. VN1 12. Br 13. UN 14. VN 15. WN 16. FO Terminal code Screwing depth Min9.0

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 600 200 400 595 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VCES IC ICP PC VR(DC) IF Tj BRAKE PART Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C TC = 25°C TC = 25°C V A A W V A Symbol Parameter Condition Ratings Unit 600 150 312 600 –20 ~ +150 V FO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN • Br-VNC Applied between : FO-VNC Sink current at FO terminal VD VCIN V V Rfo=1.5kΩ WP VWP1 VWPCUNBr Fo BN W V P U VP VVP1 VVPC UP VUP1 VUPCWN VN1VNC VN Gnd In Fo Vcc Gnd Si Out Rfo Th Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Vcc Gnd Si Out Gnd In Vcc Gnd Si Out Gnd In Vcc Gnd Si Out

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 TOTAL SYSTEM Tc 63mm U PNB VW 2.3 2.3 3.3 2.0 0.3 1.0 2.9 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 200A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Test Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.4 1.7 1.7 2.2 0.8 0.15 0.4 2.4 0.6 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 15V↔ 0V VCC = 300V, IC = 200A Tj = 125°C Inductive Load (upper and lower arm) (Fig. 3) VCE = VCES, VCIN = 15V (Fig. 4) VD = 15V, IC = 200A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit ParameterSymbol Supply Voltage Protected by OC & SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Condition V CC(surge) TC Tstg Viso Ratings VCC(PROT) 400 500 –20 ~ +100 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value or without switching (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) Tc measurement point is as shown below. (Base plate depth 3mm) °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Symbol Test Condition Unit Limits THERMAL RESISTANCES (Note-2) T C measurement point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips. Min. Typ. Max. Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Brake IGBT part, (Note-1) Brake FWDi part, (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Brake IGBT part, (Note-2) Brake FWDi part, (Note-2) Case to fin, Thermal grease applied (per 1 module) 0.21 0.35 0.40 1.10 0.13 0.21 0.27 0.47 0.018 Parameter Junction to case Thermal Resistances Contact Thermal Resistance

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 3.5 3.5 Main terminal screw : M5 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Test Condition Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 920 MECHANICAL RATINGS AND CHARACTERISTICS VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC ID V mA ms 1.8 2.3 1010 850 125 12.5 0.01 mA Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 518 310 115 111 11.5 1.0 ParameterSymbol Test Condition Max.Min. Typ. Unit Limits 1.5 2.0 609 161 560 241 118 100 12.0 12.5 1.8 (Note-3) Fault output is given only when the internal OC, SC, OT & UV protection. Fault output of OT protection operate by lower arm. Fault output of OC, SC protection given pulse. Fault output of OT, UV protection given pulse while over level. Base-plate Temperature detection, VD = 15V –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-3) VD = 15V (Note-3) V µs VN1-VNC VXP1-VXPC Tj = –20°C Tj = 25°C Tj = 125°C Inverter part Brake part A A VCE(sat) ICES VFM V mA Min. Typ. Max. V Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current I F = 75A (Fig. 2) Tj = 25°C Tj = 125°C UnitParameterSymbol Test Condition Limits 2.80 3.05 3.3 2.35 2.55 2.2 T j = 25°C Tj = 125°C BRAKE PART VD = 15V, IC = 75A VCIN = 0V, Pulsed (Fig. 1) VCE = VCES, VCIN = 15V (Fig. 4) Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Over Current Trip Level Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width Vth(ON) Vth(OFF) OC SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) tFO Inverter part V D = 15V (Fig. 5,6) Break part –20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6) VD = 15V (Fig. 5,6) RECOMMENDED CONDITIONS FOR USE Recommended value UnitTest ConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC Using Application Circuit input signal of IPM, 3φ sinusoidal PWM VVVF inverter (Fig. 8) For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 400 15 ± 1.5 ≤ 0.8 ≥ 4.0 ≤ 20 ≥ 2.5 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V (Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ±5V/µs, 2Vp-p

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) 10% 90% trr Irr trtd (on) tc (on) tc (off) td (off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td (on) + tr) (toff= td (off) + tf) VD (all) U,V,W, (N) P, (U,V,W,B) A Pulse VCEVCIN (15V) VD (all) U,V,W, (N) P, (U,V,W,B) VCIN VCC IC IC IC OC SC VCIN toff (OC) U,V,W NVCINN VCINP VD VD P Ic Vcc VCINN VCINP t t P, (U,V,W,B) U,V,W, (N) U,V,W,B, (N)VD (all) IN (Fo) Fo IN (Fo) VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic P N N CS CS U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo IN IN (Fo) (Fo) Short Circuit Current Over Current Constant Current Constant Current Fig. 3 Switching time Test circuit and waveform Fig. 1 VCE(sat) Test Fig. 2 V EC, (VFM) Test a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching Fig. 4 ICES Test Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform tdead tdead tdead Fig. 7 Dead time measurement point example

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Quick opto-couplers: TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance.
• Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT Si GNDGND In Vcc U V W B N P M IF : Interface which is the same as the U-phase OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo TEMP Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC Th UN VN VN1 WN VNC RfoFo VVP1 VP VVPC ≥0.1µ 4.7k ≥0.1µ ≥0.1µ 20k 20k 20k ≥10µ ≥10µ ≥10µ 20k ≥10µ ≥0.1µ VUP1 UP VUPC Br IF IF IF OUT Si GNDGND In Fo Vcc VD VD VD VD Fig. 8 Application Example Circuit

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 1.5 0.5 00 120 1608040 200 VD = 15V Tj = 25°C Tj = 125°C 120 160 200 240 00 10.5 1.5 2 Tj = 25°C 1.5 0.5 0 181312 15 14 17 16 10–1 101 100 23 10357 102 101 4 23 5 7 4 10–1 101 101 100 23 10357 102 4 23 5 7 4 tc(off) IC = 200A Tj = 25°C Tj = 125°C VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load tc(on) 15V 13V VD = 17V toff ton OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) SWITCHING TIME ton, toff (µs) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse) 101 23 10357 1024 23 5 7 410–1 101 100 ESW(on) ESW(off) VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load PERFORMANCE CURVES (Inverter Part)

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 10–2 100 101 23 5 7 102 10–1 23 5 7 103 100 102 101 trr Irr VCC = 300V VD = 15V Tj = 25°C Tj = 125°C Inductive load DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) 100 250 51 0 1 5 2 0 VD = 15V Tj = 25°C N-side P-side 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 CARRIER FREQUENCY fc (kHz) ID VS. fc CHARACTERISTICS (TYPICAL) CIRCUIT CURRENT ID (mA) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) Single Pulse Per unit base = Rth(j – c)Q = 0.21°C/W Single Pulse Per unit base = Rth(j – c)F = 0.35°C/W 100 103 101 10.5 1.5 2 2.5 Tj = 25°C Tj = 125°C 102 VD = 15V COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL)

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RSE060 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 1.5 2.5 0.5 0 181312 15 14 17 16 IC = 75A Tj = 25°C Tj = 125°C 100 102 101 10.5 1.5 2 2.5 VD = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) 100 00 10.5 1.5 2 2.5 Tj = 25°C 2.5 1.5 0.5 00 10060 804020 15V 13V VD = 17V VD = 15V Tj = 25°C Tj = 125°C OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) Single Pulse Per unit base = Rth(j – c)Q = 0.40°C/W Single Pulse Per unit base = Rth(j – c)F = 1.1°C/W PERFORMANCE CURVES (Brake Part)