PM200RLA060

PM200RLA060 MITSUBISHI | Alldatasheet

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Apr. 2004 MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM. c) Current rating of brake part increased. 50% for the current rating of inverter part.

• 3φ 200A, 600V Current-sense IGBT type inverter
• 100A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 22kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 10.5 6-M5 Nuts 110±0.5 78±0.5 -0.5 135 6.05 6.05 26 26 40.5 11.7 1811 71.5 66.5 6-2 3-210 19 13 LABEL 9 5 1 10 103.25 2-φ2.5 4-φ5.5 Mounting Holes 3.253-2 3-2 10.5 10.510.5 16.533.6 34.7 24.1 20 20 21.5 P WVU N B 10.5 13 10.5 30.15 11 13(Screwing Depth) 18.7 110 6.056.05 419- 0.5 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. Br 16. UN 17. VN 18. WN 19. Fo Terminal code

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE Apr. 2004 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 600 200 400 600 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VCES IC ICP PC VR(DC) IF Tj BRAKE PART Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) TC = 25°C TC = 25°C V A A W V A Symbol Parameter Condition Ratings Unit 600 100 200 343 600 100 –20 ~ +150 V FO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1 -VUPC VVP1 -VVPC , VWP1 -VWPC , VN1 -VNC Applied between : UP-VUPC , VP-VVPC W P-VWPC , UN • VN • WN • Br-VNC Applied between : UFO -VUPC , VFO -VVPC , WFO -VWPC FO -VNC Sink current at UFO , VFO , WFO , FO terminals VD VCIN V V VN U N W P VWP1 WF OVWPC VP VVP1 VF OVVPC U P VUP1 UF OVUPCBr BN W V U P Fo V NC VN1W N Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE Apr. 2004 ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Condition V CC(surge) TC Tstg Viso Ratings VCC(PROT) 400 500 –20 ~ +100 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) Tc (base plate) measurement point is below. TOTAL SYSTEM 2.1 2.0 3.3 2.4 0.4 1.0 2.5 1.0 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 200A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.5 1.6 1.5 2.2 1.0 0.2 0.4 1.2 0.5 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔ 15V VCC = 300V, IC = 200A Tj = 125°C Inductive Load (Fig. 3, 4) VCE = VCES , VD = 15V (Fig. 5) VD = 15V, IC = 200A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit PN UV W B Top view Tc Bottom view Y X 0.16* 0.25* 0.28* 0.44* 0.21 0.33 0.36 0.57 0.023 °C/W R th(j-c)Q R th(j-c)F R th(j-c)Q R th(j-c)F R th(j-c)Q R th(j-c)F R th(j-c)Q R th(j-c)F R th(c-f) Inverter IGBT part (per 1/6) (Note-2) Inverter FWDi part (per 1/6) (Note-2) Brake IGBT part (Note-2) Brake FWDi part (Note-2) Inverter IGBT part (per 1/6) (Note-1) Inverter FWDi part (per 1/6) (Note-1) Brake IGBT part (Note-1) Brake FWDi part (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance Parameter Limits Typ. Max. * If you use this value, Rth(f-a) should be measured just under the chips. (Note-2) Tc (under the chip) measurement point is below. arm axis X Y Unit : mm UP IGBT 23.7 56.7 VP WP UN WN FWDi 23.0 43.7 IGBT 57.2 56.7 FWDi 56.5 43.7 IGBT 87.7 56.7 FWDi 86.5 43.7 IGBT 37.7 28.7 FWDi 38.0 41.8 IGBT 100.7 28.7 FWDi 101.5 41.8 VN IGBT 70.2 28.7 FWDi 71.5 41.8 Br IGBT 11.0 26.7 FWDi 7.7 60.9

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE Apr. 2004 3.5 3.5 Main terminal screw : M5 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Condition Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 800 MECHANICAL RATINGS AND CHARACTERISTICS VCE(sat) ICES VFM V mA Min. Typ. Max. V Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current I F = 100A (Fig. 2) Tj = 25°C Tj = 125°C UnitParameterSymbol Condition Limits 2.1 2.0 3.3 1.6 1.5 2.2 T j = 25°C Tj = 125°C BRAKE PART VD = 15V, IC = 100A VCIN = 0V, Pulsed (Fig. 1) VCE = VCES , VD = 15V (Fig. 5) VD = 15V, VCIN = 15V Applied between : UP-VUPC , VP-VVPC , WP-VWPC U N • VN • WN • Br-VNC ID V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) SC toff(SC) OT OT r UV UV r IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 400 200 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 0.2 145 125 12.0 12.5 1.8 (Note-3) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. Detect Tj of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VCIN = 15V (Note-3) VD = 15V (Note-3) V µs VN1 -VNC VXP1 -VXPC Inverter part Brake part A–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) VD = 15V (Fig. 3,6) RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1 -VUPC , VVP1 -VVPC VWP1 -VWPC , VN1 -VNC (Note-4) Applied between : UP-VUPC , VP-VVPC , WP-VWPC U N • VN • WN • Br-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 400 15 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 ≥ 2.0 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V (Note-4) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE Apr. 2004 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD ), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC ” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) 10% 90% trr Irr trtd(on) tc(on) tc(off) td(off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td(on) + tr) (toff= td(off) + tf) Fo Fo P N N C S C S U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching P, (U,V,W,B) U,V,W, (N) U,V,W,B, (N)VD (all) IN Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic Fig. 1 VCE(sat) Test Fig. 2 V EC , (VFM ) Test VCIN Fig. 7 Dead time measurement point example Fig. 5 ICES Test Fig. 6 SC test waveform SC Short Circuit Current toff(SC) VD (all) U,V,W, (N) P, (U,V,W,B) A Pulse VCEVCIN (15V) Ic Fo IN Fo 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal VCIN (Upper Arm) IPM’ input signal VCIN (Lower Arm) Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE Apr. 2004 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH , tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 4 isolated control power supplies (VD ). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT Si OT OT OT OT OT OT OT GNDGND In Vcc U V W B N P M IF : Interface which is the same as the U-phase OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Fo Fo Fo Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC UN VN VN1 WN VNC Rfo Rfo Rfo RfoFo VVP1 VP VVPC ≥0.1µ 4.7kΩ 1kΩ ≥0.1µ ≥0.1µ 20kΩ 20kΩ 20kΩ ≥10µ ≥10µ ≥10µ 20kΩ ≥10µ ≥0.1µ Fo Fo Fo VUP1 UP VUPC Br IF IF IF IF ¡ OUT Si GNDGND In Fo Vcc VD VD VD VD Fig. 8 Application Example Circuit