PM200DVA120

PM200DVA120_05 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE PM200DVA120 FEATURE

• 1 φ 200A, 1200V Current-sense IGBT for 20kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage (P-F O available from upper leg devices)
• Acoustic noise-less 37kW class inverter application
• UL Recognized Yellow Card No. E80276(N) File No. E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 4–φ6.5 MOUNTING HOLES 3–M6NUTS C2E1 E2 C1 10– 0.64 P N 106 ±0.25 120 56 ±0.25 9.34 40.5 5 : FNO 4 : VNC 3 : CNI 2 : SNR 1 : VN1 TERMINAL CODE N 5 : FPO 4 : VPC 3 : CPI 2 : SPR 1 : VP1 P 18.3 38.5 2–φ3.5 3 ±0.525 25 38 14 14 14 2.542.54 2.54 2.54 2.54 10.16 2.54 2.54 2.54 4–R6.5 +1.0 –0.5 LABEL

MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 Symbol Parameter Applied between : VP1-VPC, VN1-VNC Applied between : CPI-VPC, CNI-VNC Applied between : FPO-VPC, FNO-VNC Sink current at FPO, FNO terminal VD VCIN VFO IFO Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 5V TC = 25°C TC = 25°C TC = 25°C V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 1200 200 400 1033 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM CONTROL PART V V V mA Condition Ratings Unit Ci Rfo Ci IN SR FO SINK SENS OUT2 OUT1 TEMP GND V CC Ci IN SR F O SINK SENS OUT2 OUT1 TEMP GND V CC AMP Rg Th AMP Rg E2 C2E1 C1 Rref VNC CNI SNR FNO VN1 VPC CPI SPR FPO VP1 Rfo Ci: 100pF, R fo: 1.5kΩ

MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 Supply Voltage Protected by SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage VCC(surge) TC Tstg Viso VVD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : C1-E2, Surge value or without switching (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 800 ParameterSymbol Condition Ratings VCC(PROT) 1000 –20 ~ +100 –40 ~ +125 2500 Unit V Vrms TOTAL SYSTEM (Note-1) T C measurement point is below. (3mm depth at the center of the side of base plate) CONTROL PART (Note-2) Fault output is given only when the internal SC, OT & UV protection. Fault output of OT protection operate by lower arm Fault output of OT, UV protection given pulse while over level. V D = 15V, VCIN = 5V Applied between : CPI-VPC, CNI -VNC –20≤ Tj ≤ 125°C, VD = 15V VD = 15V Base-plate Temperature detection, VD = 15V Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UV r IFO(H) IFO(L) tFO VSXR Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection (Lower-arms only) Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width SXR Terminal Output Voltage 1.5 2.0 118 100 12.0 12.5 1.8 5.1 –20 ≤ T j ≤ 125°C VD = 15V, VFO = 15V (Note-2) VD = 15V (Note-2) –20 ≤ Tj ≤ 125°C, Rin=6.8kΩ V A Trip level Reset level Trip level Reset level ID µs V mA ms V 1.8 2.3 125 12.5 0.01 5.6 mA 1.2 1.7 240 111 11.5 1.0 4.5 ParameterSymbol Test Condition Max.Min. Typ. Unit Limits VN1-VNC VP1-VPC ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART –IC = 200A, VD = 15V, VCIN = 5V VD = 15V, IC =200A VCIN = 0V V µs V mA 3.30 3.25 3.50 2.3 0.3 1.0 3.4 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current ParameterSymbol Test Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.4 2.65 2.60 2.50 0.9 0.2 0.4 2.4 0.7 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔ 5V VCC = 600V, IC = 200A Tj = 125°C Inductive Load (upper and lower arm) VCE = VCES, VCIN = 15V Unit Tj = 25°C Tj = 125°C Tc

MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 VCC VD VCIN(ON) VCIN(OFF) tdead fPWM Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage Arm Shoot-through Blocking Time PWM Input Frequency R th(j-c)Q Rth(j-c)F Rth(c-f) 5.88 5.88 Mounting part screw : M6 Main terminal screw : M6 Symbol Parameter Mounting torque Mounting torque Weight Test Condition Unit N • m N • m g Limits Min. Typ. Max. 3.92 3.92 4.90 4.90 510 MECHANICAL RATINGS AND CHARACTERISTICS Symbol THERMAL RESISTANCES 0.121 0.18 0.075 °C/W Inverter IGBT part (per 1/2 module) Inverter FWDi part (per 1/2 module) Case to fin, Thermal grease applied (per 1/2 module) Parameter Test Condition Unit Limits Min. Typ. Max. Junction to case Thermal Resistances Contact Thermal Resistance RECOMMENDED CONDITIONS FOR USE Symbol Recommended value UnitTest ConditionParameter Applied across C1-E2 terminals Applied between : VP1-VPC, VN1-VNC (Note-3) Applied between : CPI-VPC, CNI-VNC For IPM’s each input signals Using Application Circuit input signal of IPM, 3φ Sinusoidal PWM VVVF inverter ≤ 800 15 ± 1.5 ≤ 0.8 ≥ 4.0 ≥ 3.5 ≤ 20 V V V µs kHz (Note-3) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 101 10223 5 7 10323 5 7 10–1 100 101 tc(off) tc(on) Tj = 125°C VCC = 600V VD = 15V Inductive load toff ton 200 100 0 50 1234 300 Tj = 25°C VCIN = 0V VD = 17V 15V 13V 0 40 80 120 160 200 240 VD = 15V VCIN = 0V Tj = 25°C Tj = 125°C 0 2010 12 14 16 IC = 200A VCIN = 0V Tj = 25°C Tj = 125°C 101 102 103 VD = 15V VCIN = 5V Tj = 25°C Tj = 125°C 101 10223 5 7 10323 5 7 101 102 10–2 10–1 trr lrr VCC = 600V VD = 15V Inductive load Tj = 25°C Tj = 125°C OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR RECOVERY CURRENT –IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD(V) EMITTER-COLLECTOR VOLTAGE VEC (V) SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (µs) COLLECTOR CURRENT IC (A) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERS RECOVERY TIME trr (µs) COLLECTOR RECOVERY CURRENT –IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC(A) DIODE FORWARD CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT lrr (A) PERFORMANCE CURVES

MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 101 10–3 100 10–2 10–1 10–323 57 10–223 57 10–123 57 100 23 57 101 Single Pulse Per unit base = Rth(j – c)Q = 0.121°C/W 101 10–3 100 10–2 10–1 10–323 57 10–223 57 10–123 57 100 23 57 101 Single Pulse Per unit base = Rth(j – c)F = 0.18°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT per 1 element) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi per 1 element) TIME (s)