PM200CBS060

PM200CBS060 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE PM200CBS060 FEATURE a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Over-temperature protection by detecting T j of the IGBT chips

• 3 φ 200A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 18.5/22kW class inverter application APPLICATION Servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm Terminal code 1. VWPC 2. WP 3. VWP1 4. VVPC 5. VP 6. VVP1 7. VUPC 8. UP 9. VUP1 10. VNC 11. VN1 12. WN 13. VN 14. UN 15. Fo LABEL 630 0.64 15 19 19 19 19 W V U N P MOUNTING HOLES 4-φ5.5 1.5 71±0.3 7 23.79 120 106±0.37 10.16 10.16 10.16 15- 0.64 14 7 10 15 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25

MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Conditions Ratings Unit 600 200 400 961 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VFO IFO CONTROL PART V mA VD+0.5 Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Conditions Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : FO-VNC Sink current at FO terminal VD VCIN V V Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Vcc Gnd Si Out OT Gnd In Vcc Gnd Si Out OT Gnd In Vcc Gnd Si Out OT Rfo=1.5kΩ WP VWP1 VWPCUNFo VP VVP1 VVPC UP VUP1 VUPCWN VN1VNC VN Rfo NWV P U

MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 ParameterSymbol Supply Voltage Protected by OC & SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Conditions VCC(surge) TC Tstg Viso Ratings VCC(PROT) 400 500 –20 ~ +110 –40 ~ +125 2500 Unit V Vrms VVD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value (Note-1) 60Hz, Sinusoidal Charged part to Base, AC 1 min. (Note-1) Tc(under the chip) measurement point is below. TOTAL SYSTEM (Unit : mm) X Y Axis Arm UP VP WP UN VN WN IGBT 84.5 57.5 FWDi 84.5 45.8 IGBT 53.0 57.5 FWDi 53.0 45.8 IGBT 21.5 57.5 FWDi 21.5 45.8 IGBT 92.9 22.3 FWDi 81.1 22.3 IGBT 56.2 22.3 FWDi 44.4 22.3 IGBT 13.2 22.3 FWDi 24.9 22.3 2.3 2.3 3.3 2.4 0.3 1.0 3.3 1.0 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 200A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Test Conditions VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.8 1.7 1.7 2.2 1.2 0.15 0.4 2.4 0.5 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 15V↔0V VCC = 300V, IC = 200A Tj = 125°C Inductive Load (Fig. 3) VCE = VCES, VD = 15V (Fig. 4) VD = 15V, IC = 200A VCIN = 0V, Pulsed (Fig. 1) V mA V µs µs µs µs µs Unit X UVWPN Bottom view Y °C/W °C/W °C/W Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Symbol Parameter Test Conditions Unit Limits Min. Typ. Max. THERMAL RESISTANCES Contact Thermal Resistance *: If you use this value, R th(f-a) should be measured just under the chips. Tc measured point is just under the chips Inverter IGBT part (per 1/6 module) Tc measured point is just under the chips Inverter FWDi part (per 1/6 module) Case to fin, (per 1 module) Thermal grease applied Junction to case Thermal Resistances 0.13* 0.21* 0.025

MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 VD = 15V, VCIN = 15V Applied between : U P-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC ID V V mA mA ms 1.8 2.3 810 670 155 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Over Current Trip Level Short Circuit Trip Level Over Current Delay Time Over Temperature protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) OC SC toff(OC) OT OTr UV UV r IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 400 310 135 11.5 1.0 ParameterSymbol Test Conditions Max.Min. Typ. Unit Limits 1.5 2.0 515 560 145 125 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal OC, SC, OT & UV protection. Fault output of OC, SC, OT & UV protection operate by lower arm. Fault output of OC, SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level. Detect T j of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-2) VD = 15V (Note-2) µs 3.5 3.5 Main terminal screw : M5 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Test Conditions Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 680 MECHANICAL RATINGS AND CHARACTERISTICS VD = 15V (Fig. 5,6) –20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6) VD = 15V (Fig. 5,6) VN1-VNC VXP1-VXPC Tj = –20°C Tj = 25°C Tj = 125°C A A V V RECOMMENDED CONDITIONS FOR USE Recommended value UnitTest ConditionsSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : U P-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit of Fig.8 For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 400 15.0 ± 1.5 ≤ 0.8 ≥ 4.0 ≤ 20 ≥ 2.5 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V V (Note-3) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above V CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W) U,V,W, (N)VD (all) IN (Fo) VCIN (0V) IcV a) Lower Arm Switching b) Upper Arm Switching U,V,W, (N) IN (Fo) VD (all) V P, (U,V,W) VCIN (15V) –Ic Fo P N CS U,V,W Vcc IcVD (all) VCIN VCIN (15V) Signal input (Upper Arm) Signal input (Lower Arm) Fig. 1 VCE(sat) Test Fig. 2 V EC Test N CS Vcc IcVD (all) P U,V,W VCIN VCIN (15V) Fo Signal input (Upper Arm) Signal input (Lower Arm) 10% 90% trr Irr trtd (on) tc (on) tc (off) td (off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td (on) + tr) (toff= td (off) + tf) Fig. 4 ICES Test Fig. 3 Switching time Test circuit and waveform VD (all) U,V,W, (N) P, (U,V,W) A Pulse VCEVCIN (15V) IN (Fo) VD (all) U,V,W, (N) P, (U,V,W) VCIN VCC IC IN (Fo) Fig. 5 OC and SC Test IC IC OC SC VCIN toff (OC) Short Circuit Current Over Current Constant Current Constant Current Fig. 6 OC and SC Test waveform VCINN VCINP t t tdead tdead tdead Fig. 7 Dead time measurement point example

MITSUBISHI <INTELLIGENT POWER MODULES> PM200CBS060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers : tPLH, tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler : CTR > 100%
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT OT Si GNDGND In Vcc U V W N P M IF : Interface which is the same as the U-phase OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC UN VN VN1 WN VNC RfoFo VVP1 VP VVPC ≥0.1µ 1kΩ ≥0.1µ ≥0.1µ 20kΩ 20kΩ 20kΩ ≥10µ ≥10µ ≥10µ 20kΩ ≥10µ ≥0.1µ VUP1 UP VUPC IF IF IF VD VD VD VD Fig. 8 Application Example Circuit OT OT OT OUT OT OT