PM150RLA120

PM150RLA120 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM. c) Current rating of brake part increased. 50% for the current rating of inverter part.

• 3 φ 150A, 1200V Current-sense IGBT type inverter
• 75A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 10.5 6-M5 Nuts 110±0.5 78±0.5 -0.5 135 6.05 6.05 26 26 40.5 11.7 1811 71.5 66.5 6-2 3-210 19 13 LABEL 9 5 1 10 103.25 2-φ2.5 4-φ5.5 Mounting Holes 3.253-2 3-2 10.5 10.510.5 16.533.6 34.7 24.1 20 20 21.5 P WVU N B 10.5 13 10.5 30.15 11 13(Screwing Depth) 18.7 110 6.056.05 4 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. Br 16. UN 17. VN 18. WN 19. Fo Terminal code 19- 0.5

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 1200 150 300 1041 –20 ~ +150 INTERNAL FUNCTIONS BLOCK DIAGRAM VCES IC ICP PC VR(DC) IF Tj BRAKE PART Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) TC = 25°C TC = 25°C V A A W V A Symbol Parameter Condition Ratings Unit 1200 150 595 1200 –20 ~ +150 VFO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN • Br-VNC Applied between : U FO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals VD VCIN V V VN UN WP VWP1 WFOVWPC VP VVP1 VFOVVPC UP VUP1 UFOVUPCBr BN W V U P Fo 1.5k1.5k 1.5k 1.5k VNC VN1WN Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT Gnd In Fo Vcc Gnd Si Out OT

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 2.3 2.4 3.5 2.5 0.8 1.0 3.0 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 150A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART ParameterSymbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.5 1.8 1.9 2.5 1.0 0.5 0.4 2.0 0.7 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V↔ 15V VCC = 600V, IC = 150A Tj = 125°C Inductive Load (Fig. 3, 4) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, IC = 150A VCIN = 0V (Fig. 1) V mA V µs Unit Bottom view Y X (Note-1) Tc (under the chip) measurement point is below. arm axis X Y Unit : mm UP IGBT 23.0 56.3 VP WP UN WN FWDi 23.0 43.1 IGBT 57.5 56.3 FWDi 56.5 43.1 IGBT 87.5 56.3 FWDi 86.5 43.1 IGBT 37.0 29.1 FWDi 38.0 42.4 IGBT 100.5 29.1 FWDi 101.5 42.4 VN IGBT 70.5 29.1 FWDi 71.5 42.4 Br IGBT 11.0 26.8 FWDi 8.0 61.0 * If you use this value, R th(f-a) should be measured just under the chips. 0.12* 0.20* 0.21* 0.31* 0.023 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT (per 1 element) (Note-1) Inverter FWDi (per 1 element) (Note-1) Brake IGBT (Note-1) Brake FWDi (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition UnitMin. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance Parameter Limits Typ. Max. ParameterSymbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition VCC(surge) Tstg Viso Ratings VCC(PROT) 800 1000 –40 ~ +125 2500 Unit V Vrms VVD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. TOTAL SYSTEM

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 3.5 3.5 Main terminal screw : M5 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Condition Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 800 MECHANICAL RATINGS AND CHARACTERISTICS VCE(sat) ICES VFM V mA Min. Typ. Max. V Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current IF = 75A (Fig. 2) Tj = 25°C Tj = 125°C UnitParameterSymbol Condition Limits 2.3 2.4 3.5 1.8 1.9 2.5 Tj = 25°C Tj = 125°C BRAKE PART VD = 15V, IC = 75A VCIN = 0V (Fig. 1) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, VCIN = 15V Applied between : U P-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC ID V mA ms 1.8 2.3 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(ON) Vth(OFF) SC toff(SC) OT OTr UV UV r IFO(H) IFO(L) tFO Trip level Reset level Trip level Reset level CONTROL PART 1.2 1.7 300 150 135 11.5 1.0 ParameterSymbol Condition Max.Min. Typ. Unit Limits 1.5 2.0 0.2 145 125 12.0 12.5 1.8 (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operat e to protect it. VD = 15V Detect Tj of IGBT chip –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-2) VD = 15V (Note-2) V µs VN1-VNC V*P1-V*PC Inverter part Brake part A–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) VD = 15V (Fig. 3,6) RECOMMENDED CONDITIONS FOR USE Recommended value UnitConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : U P-VUPC, VP-VVPC, WP-VWPC UN • VN • WN • Br-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 800 15 ± 1.5 ≤ 0.8 ≥ 9.0 ≤ 20 ≥ 2.5 VCC VCIN(ON) VCIN(OFF) fPWM tdead VD V kHz µs V (Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above V CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) 10% 90% trr Irr trtd(on) tc(on) tc(off) td(off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td(on) + tr) (toff= td(off) + tf) Fo Fo P N N CS CS U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching P, (U,V,W,B) U,V,W, (N) U,V,W,B, (N)VD (all) IN Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic Fig. 1 VCE(sat) Test Fig. 2 V EC, (VFM) Test VCIN Fig. 7 Dead time measurement point example Fig. 5 ICES Test Fig. 6 SC test waveform SC Short Circuit Current toff(SC) VD (all) U,V,W, (N) P, (U,V,W,B) A Pulse VCEVCIN (15V) Ic Fo IN Fo 0V 1.5V 1.5V 1.5V2V 2V0V t t tdeadtdeadtdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value IPM’ input signal V CIN (Upper Arm) IPM’ input signal V CIN (Lower Arm) Constant Current

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT Si OT OT OT OT OT OT OT GNDGND In Vcc U V W B N P M IF : Interface which is the same as the U-phase OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Fo Fo Fo Vcc OUT Si GNDGND In Fo Vcc OUT Si GNDGND In Fo Vcc VWP1 WP VWPC UN VN VN1 WN VNC 1.5k 1.5k 1.5k 1.5kFo VVP1 VP VVPC ≥0.1µ 4.7k ≥0.1µ ≥0.1µ 20k 20k 20k ≥10µ ≥10µ ≥10µ 20k ≥10µ ≥0.1µ VFo WFo UFo VUP1 UP VUPC Br IF IF IF IF ¡ OUT Si GNDGND In Fo Vcc VD VD VD VD Fig. 8 Application Example Circuit

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 PERFORMANCE CURVES 100 102 101 23 5 7 102 101 23 5 7 103 OUTPUT CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 200 150 100 00 10.5 1.5 2 Tj = 25°C 1.5 0.5 00 50 100 150 VD = 15V Tj = 25°C Tj = 125°C 1.5 0.5 0 181312 15 14 17 16 10–1 SWITCHING TIME ton, toff (µs) COLLECTOR CURRENT IC (A) 101 101 23 5 7 102 100 23 5 7 103 10–1 COLLECTOR CURRENT IC (A) 101 101 23 5 7 102 100 23 5 7 103 tc(off) tc(off) tc(off) tc(off) tc(on) tc(on) toff ton IC = 150A Tj = 25°C Tj = 125°C VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load 15V 13V VD = 17V ESW(off) ESW(off) ESW(on) VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (INVERTER PART · TYPICAL) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 OUTPUT CHARACTERISTICS (BRAKE PART · TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 100 00 10.5 1.5 2.5 2 Tj = 25°C 15V 13V VD = 17V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 1.5 0.5 00 20 100 40 60 80 VD = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) 2.5 1.5 0.5 012 14 1613 15 17 18 IC = 75A Tj = 25°C Tj = 125°C EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (BRAKE PART · TYPICAL) 0 0.5 1 1.5 2 2.5 VD = 15V Tj = 25°C Tj = 125°C 100 101 102 103 COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (BRAKE PART · TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (BRAKE PART · TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (INVERTER PART · TYPICAL) 101 103 102 0.5 1 1.5 2 3 2.5 VD = 15V Tj = 25°C Tj = 125°C DIODE REVERSE RECOVERY CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) 10–1 101 101 23 5 7 102 100 23 5 7 103 100 102 101 trr Irr VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load

MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 fc (kHz) 250 51 0 1 5 2 0 VD = 15V Tj = 25°C N-side P-side ID VS. fc CHARACTERISTICS (TYPICAL) ID (mA) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–110–523 5 7 10–423 5 7 23 5 7 100 23 5 7 101 TIME (s) Single Pulse IGBT Part; Per unit base = R th(j – c)Q = 0.12°C/W FWDi Part; Per unit base = R th(j – c)F = 0.20°C/W TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–110–523 5 7 10–42 3 57 2 3 57 100 23 5 7 101 TIME (s) Single Pulse IGBT Part; Per unit base = R th(j – c)Q = 0.21°C/W FWDi Part; Per unit base = R th(j – c)F = 0.31°C/W