PM150DSA120_00 MITSUBISHI | Alldatasheet

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Sep.2000 K FE SNR VNC FNO VN1 CN1 VP1 SPR CP1 VPC FPO N SIDE P SIDE L P 0.64 MM SQ. PIN (10 TYP.) M DH GG B A N J C N S (8 TYP.)C2E1 E2 C1 21 345 T - DIA. (2 TYP.) Q - DIA. (2 TYP.) R - THD. (3 TYP.) P 213 4 5 SINK SENS OUT2 OUT1 GND TEMPVCC FO SR IN VN1 FNO SNR CN1 VNC C2E1 SINK SENS OUT2 OUT1 GND TEMPVCC FO SR IN C1VP1 FPO SPR CP1 VPC Description: Mitsubishi Intelligent Power Mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20kHz. Built-in control circuits pro- vide optimum gate drive and pro- tection for the IGBT and free wheel diode power devices. Features: u Complete Output Power Circuit u Gate Drive Circuit u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM150DSA120 is a 1200V,

150 Ampere Intelligent Power Mod-

ule. Type Current Rating V CES Amperes Volts (x 10) PM 150 120 Dimensions Inches Millimeters A 4.33 110.0 B 3.66 ±0.010 93.0 ± 0.25 C 2.20 56.0 D 2.01 51.0 F 1.02 26.0 G 0.98 25.0 H 0.90 23.0 J 0.85 21.5 Dimensions Inches Millimeters K 0.55 14.0 L 0.51 13.0 M 0.47 12.0 N 0.33 8.5 P 0.28 7.0 Q 0.22 Dia. Dia. 5.5 R M5 Metric M5 S 0.100 2.54 T 0.08 Dia. Dia. 2.0 Outline Drawing and Circuit Diagram MITSUBISHI INTELLIGENT POWER MODULES PM150DSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Power Device Junction Temperature T j -20 to 150 °C Storage T emperature T stg -40 to 125 °C Case Operating Temperature T C -20 to 100 °C Mounting Torque, M5 Mounting Screws — 2.5~3.5 N · m Mounting Torque, M5 Main Terminal Screws — 2.5~3.5 N · m Module Weight (Typical) — 430 Grams Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) V CC(prot.) 800 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms Control Sector Supply Voltage (Applied between VP1-VPC , VN1-VNC )V D 20 Volts Input Voltage (Applied between CP1-VPC , CN1 -VNC )V CIN 10 Volts Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc)V FO 20 Volts Fault Output Current (Sink Current at FPO , FNO Terminal) I FO 20 mA IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V , VCIN = 5V) V CES 1200 Volts Collector Current, (Tc = 25°C) I C 150 Amperes Peak Collector Current, (Tc = 25°C) I CP 300 Amperes Supply Voltage (Applied between C1 - E2) V CC 900 Volts Supply Voltage, Surge (Applied between C1 - E2) V CC(surge) 1000 Volts Collector Dissipation P C 960 Watts MITSUBISHI INTELLIGENT POWER MODULES PM150DSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Over Current Trip Level Inverter Part OC -20 °C ≤ T ≤ 125°C, VD = 15V 200 320 — Amperes Short Circuit Trip Level Inverter Part SC -20 °C ≤ T ≤ 125°C, VD = 15V 280 450 — Amperes Over Current Delay Time t off(OC) VD = 15V — 5 — µs Over Temperature Protection OT Trip Level 100 110 120 °C OT r Reset Level 85 95 105 °C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts UV r Reset Level — 12.5 — Volts Supply Voltage V D Applied between VP1-VPC , VN1-VNC 13.5 15 16.5 Volts Circuit Current I D VD = 15V, VCIN = 5V , VN1 -VNC —1 92 6 m A VD = 15V , VCIN = 5V, VXP1 -VXPC —1 92 6 m A Input ON Threshold Voltage V CIN(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage V CIN(off) CP1-VPC , CN1-VNC 1.7 2.0 2.3 Volts PWM Input Frequency f PWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current I FO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA Minimum Fault Output Pulse Width t FO VD = 15V 1.0 1.8 — ms SXR Terminal Output Voltage V SXR -20°C ≤ Tj ≤125°C, Rin = 6.8 kΩ (SPR , SNR ) 4.5 5.1 5.6 Volts MITSUBISHI INTELLIGENT POWER MODULES PM150DSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I CES VCE = VCES , Tj = 25°C— — 1 m A VCE = VCES , Tj = 125°C— — 1 0 m A Emitter-Collector Voltage V EC -IC = 150A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts Collector-Emitter Saturation Voltage V CE(sat) VD = 15V , VCIN = 0V , IC = 150A — 2.3 3.2 Volts VD = 15V , VCIN = 0V , IC = 150A, — 2.1 2.9 Volts Tj = 125°C Inductive Load Switching Times t on 0.5 1.4 2.5 µs trr VD = 15V, VCIN = 0 ↔ 5V — 0.2 0.4 µs tC(on) VCC = 600V, IC = 150A — 0.4 1.0 µs toff Tj = 125°C — 2.5 3.5 µs tC(off) — 0.6 1.1 µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)Q Each IGBT — — 0.13 °C/Watt R th(j-c)F Each FWDi — — 0.25 °C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module — — 0.048 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across C1-E2 Terminals 0 ~ 800 Volts VD Applied between VP1-VPC , VN1-VNC 15 ± 1.5 Volts Input ON Voltage V CIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage V CIN(off) CP1-VPC , CN1 -VNC 4.0 ~ VSXR Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time t dead Input Signal ≥ 3.5 µs MITSUBISHI INTELLIGENT POWER MODULES PM150DSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150DSA120 FLAT-BASE TYPE INSULATED PACKAGE SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, I C , (AMPERES) SATURATION VOLTAGE V CE(sat), (VOLTS) 00 40 24080 120 200 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 160 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SUPPLY VOLTAGE, V D , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) 12 14 16 18 20 IC = 150A VCIN = 0V Tj = 25oC Tj = 125oC 012 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) 120 160 200 240 Tj = 25oC VCIN = 0V VD = 17V 101 102 103 10-1 COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIMES, ton, toff, (ms) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton 100 101 toff VCC = 600V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 101 102 103 10-1 COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIMES, tc(on), tc(off), (ms) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) tc(on) 100 101 tc(off) VCC = 600V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 101 102 103 10-2 COLLECTOR REVERSE CURRENT, -I C , (AMPERES) REVERSE RECOVERY TIME, t rr, (ms) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 10-1 100 VCC = 600V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) 102 103 trr Irr 00 1.0 2.5 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) COLLECTOR REVERSE CURRENT, -I C , (AMPERES) DIODE FORWARD CHARACTERISTICS 101 103 0.5 1.5 2.0 Tj = 25oC Tj = 125oC VCIN = 5V 102 3.0 3.5 100 120 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) SUPPLY VOLTAGE, V D , (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) 12 14 16 18 20 TC = 25oC 100 120 140 OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T C , (oC) OVER CURRENT TRIP LEVEL % (NORMALIZED) 0 40 80 120 VD = 15V 160

Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150DSA120 FLAT-BASE TYPE INSULATED PACKAGE TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-1 100 101 100 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = R th(j-c)F = 0.25oC/W 10-210-3 100 120 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T C , (oC) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 0 40 80 120 VD = 15V 160 CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) JUNCTION TEMPERATURE, T C , (oC) UV TRIP-RESET LEVEL, UV, UVr, (VOLTS) 16004 0 80 UV r UV 120 TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) 101 10-1 100 101 100 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = R th(j-c)Q = 0.13oC/W 10-210-3