PM150CSD120

PM150CSD120 MITSUBISHI | Alldatasheet

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MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE PM150CSD120 FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3 φ 150A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 16.5 135 24.1 510.6 11.6 MOUNTING HOLES40.68 3.22 10 3-2 3.22 3-2 3-2 3-2 6-2 66.44 202039.5 1234 5678 95.5 ±0.5 110±1 120.5 LABEL 4- φ5.5 φ2.54 Screwing depth Min9.0 2-φ2.54 ±0.5 0.5 51.5 A 10.5 23.1 7.7 21.3 33.7 34.7 4-R6 6-M5 NUTS ±0.3 24.1 –0.5 +1.0 U P N B PPS VW 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. NC 16. UN 17. VN 18. WN 19. FO Terminal code A : DETAIL 19- 0.5 0.5

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ WP VWP1 VWPCUNNC Fo NC N W V P U VP VVP1 VVPC UP VUP1 VUPCWN VN1VNC VN UFOWFO VFO RfoRfo RfoRfo Th Gnd In Fo Vcc Gnd Si Out Gnd In Fo TEMP Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out Gnd In Fo Vcc Gnd Si Out VCES ±IC ±ICP PC Tj Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature V D = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C V A A W MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit 1200 150 300 781 –20 ~ +150 V FO IFO CONTROL PART V mA Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Symbol Parameter Condition Ratings Unit Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals VD VCIN V V

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 ParameterSymbol Supply Voltage Protected by OC & SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Condition V CC(surge) TC Tstg Viso Ratings VCC(PROT) 800 1000 –20 ~ +100 –40 ~ +125 2500 Unit V Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value or without switching (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) TC measurement point is as shown below. (Base plate depth 3mm) TOTAL SYSTEM Tc 63mm U PNB VW ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART 3.2 2.8 3.5 2.5 0.3 1.0 3.5 1.2 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current C = 150A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25°C Tj = 125°C ParameterSymbol Test Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits 0.5 2.4 2.1 2.5 1.0 0.15 0.4 2.5 0.7 T j = 25°C Tj = 125°C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 15V↔ 0V VCC = 600V, IC = 150A Tj = 125°C Inductive Load (upper and lower arm) (Fig. 3) VCE = VCES, VCIN = 15V (Fig. 4) VD = 15V, IC = 150A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit 0.16 0.24 0.10 0.16 0.018 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Case to fin, Thermal grease applied (per 1 module) Symbol Parameter Test Condition Unit Limits Min. Typ. Max. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips.

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 3.5 3.5 Main terminal screw : M5 Mounting part screw : M5 Symbol Parameter Mounting torque Mounting torque Weight Test Condition Unit N • m N • m g Limits Min. Typ. Max. 2.5 2.5 3.0 3.0 920 MECHANICAL RATINGS AND CHARACTERISTICS RECOMMENDED CONDITIONS FOR USE Recommended value UnitTest ConditionSymbol Parameter VApplied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit input signal of IPM, 3φ sinusoidal PWM VVVF inverter (Fig. 8) For IPM’s each input signals (Fig. 7) Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time ≤ 800 15 ± 1.5 ≤ 0.8 ≥ 4.0 ≤ 20 ≥ 3.0 VCC VCIN(on) VCIN(off) fPWM tdead VD V kHz µs V (Note-4) Allowable Ripple rating of Control Voltage : d v/dt ≤ ±5V/µs, 2Vp-p VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC ID V mA ms 1.8 2.3 125 12.5 0.01 mACircuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Over Current Trip Level Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width V th(on) Vth(off) OC SC toff(OC) OT OTr UV UV r IFO(H) IFO(L) tFO CONTROL PART 1.2 1.7 282 200 111 11.5 1.0 ParameterSymbol Test Condition Max.Min. Typ. Unit Limits 1.5 2.0 410 540 118 100 12.0 12.5 1.8 (Note-3) Fault output is given only when the internal OC, SC, OT & UV protection. Fault output of OC, SC and UV protection operate by upper and lower arms. Fault output of OT protection operate by lower arm. Fault output of OC, SC protection given pulse. Fault output of OT, UV protection given pulse while over level. Base-plate Temperature detection, V D = 15V –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V (Note-3) VD = 15V (Note-3) V µs VD = 15V (Fig. 5,6) –20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6) VD = 15V (Fig. 5,6) VN1-VNC VXP1-VXPC Tj = 25°C Tj = 125°C A A Trip level Reset level Trip level Reset level

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V D), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above V CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) U,V,W NVCINN VCINP VD VD P Ic Vcc VCINN VCINP t t tdead tdead tdead P, (U,V,W) U,V,W, (N) U,V,W, (N)VD (all) IN Fo IN Fo VD (all) VCIN (0V) IcV V P, (U,V,W) VCIN (15V) –Ic VD (all) U,V,W, (N) P, (U,V,W) A Pulse VCEVCIN (15V) VD (all) U,V,W, (N) P, (U,V,W) VCIN VCC IC IC IC OC SC VCIN toff (OC) IN Fo Fo IN 10% 90% trr Irr trtd (on) tc (on) tc (off) td (off) VCIN Ic VCE 10%10% 10% 90% tf (ton= td (on) + tr) (toff= td (off) + tf) Fo P N N CS CS U,V,W Vcc Vcc Ic IcVD (all) VD (all) P U,V,W VCIN VCIN VCIN (15V) VCIN (15V) Fo Fo Fo Short Circuit Current Over Current Constant Current Constant Current Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform Fig. 7 Dead time measurement point example Fig. 3 Switching time Test circuit and waveform Fig. 1 VCE(sat) Test Fig. 2 V EC Test a) Lower Arm Switching Signal input (Upper Arm) Signal input (Lower Arm) Signal input (Upper Arm) Signal input (Lower Arm) b) Upper Arm Switching Fig. 4 ICES Test

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM ’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler.
• Quick opto-couplers : TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance.
• Slow switching opto-coupler : recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
• Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
• Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. OUT Si GNDGND In Vcc U V W NC N P M IF OUT Si GNDGND In Vcc OUT Si GNDGND In Vcc OUT Si GNDGND In Fo Fo Fo Fo Vcc OUT Si GNDGND In Fo TEMP Vcc OUT Si GNDGND In Fo Vcc V WP1 WP VWPC Th UN VN VN1 WN VNC Rfo Rfo Rfo RfoFo VVP1 VP VVPC ≥0.1µ ≥0.1µ ≥0.1µ 20k 20k 20k ≥10µ ≥10µ ≥10µ 20k ≥10µ ≥0.1µ VFO WFO UFO VUP1 UP VUPC NC IF IF IF VD VD VD VD : Interface which is the same as the U-phase Fig. 8 Application Example Circuit

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 PERFORMANCE CURVES 200 120 160 00 1.510.5 2 2.5 3 Tj = 25°C 2.5 0.5 1.5 00 200120 1608040 VD = 15V Tj = 25°C Tj = 125°C 1.5 2.5 0.5 0 181312 15 14 17 16 10–1 101 101 23 5 7 102 100 23 5 7 103 10–1 101 101 23 5 7 102 100 23 5 7 103 tc(off) tc(on) tc(on) toff ton IC = 150A Tj = 25°C Tj = 125°C VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load 10–1 102 101 23 5 7 102 100 23 5 7 103 101 VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load ESW(off) ESW(off) ESW(on) 15V 13V VD = 17V tc(off) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. V D ) CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs) SWITCHING TIME ton, toff (µs) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 101 103 102 1 1.5 20.5 2.5 10–2 100 101 23 5 7 102 10–1 23 5 7 103 101 103 102 trr Irr Irr VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load VD = 15V Tj = 25°C Tj = 125°C trr COLLECTOR RECOVERY CURRENT –IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT lrr (A) 120 250 51 0 1 5 2 0 100 VD = 15V Tj = 25°C N-side P-side 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) CARRIER FREQUENCY fc (kHz) ID VS. fc CHARACTERISTICS (TYPICAL) CIRCUIT CURRENT ID (mA) 101 10–3 100 10–2 10–1 10–323 5 7 10–223 5 7 10–123 5 7 100 23 5 7 101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) Single Pulse Per unit base = Rth(j – c)Q = 0.16°C/W Single Pulse Per unit base = Rth(j – c)F = 0.24°C/W