PM1200HCE330-1

PM1200HCE330-1 MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 1-element in a Pack G AISiC Baseplate G Monolithic Gate Drive G Protection Logic : OC/OT/UV (Over Current / Over Temperature / Under supply Voltage) APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers PM1200HCE330-1 OUTLINE DRAWING Dimensions in mm HVIPM (High Voltage Intelligent Power Module) LABEL CONTROL CONNECTOR TERMINAL ARREANGEMENT CONTROL CONNECTOR CONTROL CONNECTOR FEMALE TYPE: IL-AG5-6S-S3C1 NC VC CI FO NC CCC EEE EG 61.5 ±0.3 57±0.3 2.6 57±0.3 190 ±0.3 1745 ±0.3 61.5 6-M8 NUTS ±0.3 124 ±0.3 140 ±0.3 1123 15.8518.3 (14) (16.5) (15) (15) 9.3 2-M3 Screwing 8 - φ6.5 MOUNTING HOLES EMITTER ELECTRODE COLLECTOR ELECTRODE Screwing depth 16.5mm 36.9 30.9 27.1 29.6 HVIPM (High Voltage Intelligent Power Module)

Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPEHVIPM (High Voltage Intelligent Power Module) C E FO CI VC GE IGBT FWDi OC/SC OT UV ASIC Control logic Protection logic Input interface Connector VD detectorControl circuit ground to control circuit Thermal sensor Current sensor Main circuit Gate driver R.T.C (Real Time Control) VD VCIN VFO IFO Control supply voltage Input voltage Fault output supply voltage Fault output current Applied between : V1–VC Applied between : C1–VC Applied between : FO–VC Sink current of FO terminal 26.4 26.4 26.4 20.0 CONTROL PART Symbol Item Conditions Unit Ratings V V V mA V CES ±IC ±ICP PC Viso Tj Tstg Collector-emitter voltage Collector current Collector current (peak) Maximum power dissipation Isolation voltage Junction temperature Storage temperature T j = 25°C TC = 25°C TC = 25°C TC = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. 3300 1200 2400 12500 6000 –40 ~ +150 –40 ~ +115 MAXIMUM RATINGS INVERTER PART Symbol Item Conditions Unit Ratings V A A W V INTERNAL FUNCTIONS BLOCK DIAGRAM HVIPM (High Voltage Intelligent Power Module)

Jul. 2005

ELECTRICAL CHARACTERISTICS

INSULATED TYPEHVIPM (High Voltage Intelligent Power Module) HVIPM (High Voltage Intelligent Power Module) Control supply voltage Circuit current Input ON threshold voltage Input OFF threshold voltage Fault output pulse width Over current trip level Over temperature protection Supply circuit under voltage protection Applied between : V1–VC VD = 24V, Tj = 25°C Applied between : C1–VC VD = 24V Tj = –25°C ~ 125°C Baseplate temperature detection Tj = –25°C ~ 125°C V mA V V µs A V V Min Typ Max 26.4 120 7.3 11.7 200 123 108 20.8 24.0 6.7 11.1 100 113 20.0 20.5 21.6 6.1 10.5 2200 103 19.2 V D ID Vth(ON) Vth(OFF) tFO OC OT Otr UV UVr Symbol Item Conditions Limits Unit CONTROL PART VCE = VCES, Tj = 25°C IC = 1200A, VD = 24V, VCIN = 0V Tj = 25°C, at the main terminals IC = 1200A, VD = 24V, VCIN = 0V Tj = 125°C, at the main terminals –IC = 1200A, VD = 24V, VCIN = 24V Tj = 25°C, at the main terminals –IC = 1200A, VD = 24V, VCIN = 24V Tj = 125°C, at the main terminals VCC = 1500V, IC = 1200A VD = 24V, VCIN = 0V ↔ 24V Tj = 125°C, Ls = 100nH Inductive load Min Typ Max 3.95 3.75 6.00 6.00 1.40 mA V V µs J/pulse µs J/pulse µs J/pulse I CES VCE(sat) VEC ton Eon toff Eoff trr Erec Symbol Item Conditions Limits Unit Collector cutoff current Collector-emitter saturation voltage Emitter-collector voltage Turn-on time Turn-on switching energy Turn-off time Turn-off switching energy Reverse recovery time Reverse recovery energy 3.05 3.40 2.90 2.80 1.80 1.60 0.95

Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPEHVIPM (High Voltage Intelligent Power Module) HVIPM (High Voltage Intelligent Power Module) Rth(j-c)Q Rth(j-c)R Rth(c-f) Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ grease = 1W/m·K K/kW K/kW K/kW Thermal resistance Contact thermal resistance Min Typ Max 10.0 20.0 7.5 THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Applied between : C–E terminals Applied between : V1–VC Applied between : C1–VC 3 sinusoidal PWM control Reference at IPM’s input signals V V V V kHz µs DC link voltage Control supply voltage Input ON voltage Input OFF voltage PWM input frequency Dead time Min Typ 1500 24.0 0.5 Max 2200 25.2 4.0 2.0 22.8 16.0 8.0 RECOMMENDED CONDITIONS FOR USE Symbol Item Conditions Recommended values Unit M CTI da ds M8 : Main terminals screw M6 : Mounting screw M3 : Auxiliary terminals screw N·m kg mm mm Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Min Typ Max 13.0 6.0 0.6 1.5 7.0 3.0 0.4 600 19.5 32.0 MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit

Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPEHVIPM (High Voltage Intelligent Power Module) HVIPM (High Voltage Intelligent Power Module) PERFORMANCE CURVES COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) NEGATIVE COLLECTOR CURRENT (A) EMITTER-COLLECTOR VOLTAGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 1200 16008004000 2000 2400 0 1200 16008004000 2000 2400 2.5 1.5 0.5 0 1200 16008004000 2000 2400 COLLECTOR CURRENT (A) SWITCHING ENERGIES (J/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) 101 102 100 10-1 102101 23 5 7 103 10423 5 7 23 5 7

7 VCC = 1500V, VD = 24V

VCIN(on) = 0V ↔ 24V Tj = 125°C, Inductive load VCC = 1500V, VD = 24V VCIN = 0V ↔ 24V Tj = 125°C, Inductive load Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C tr tf toff ton Eoff Erec VD = 24V, VCIN = 0V, at the main terminals VD = 24V, VCIN = 24V, at the main terminals Eon

Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPEHVIPM (High Voltage Intelligent Power Module) HVIPM (High Voltage Intelligent Power Module) 1.2 1.0 0.8 0.6 0.4 0.2 3000 2500 2000 1500 1000 0 1000 20000 3000 4000 500 3000 2500 2000 1500 1000 0 1000 20000 3000 4000 500 NEGATIVE COLLECTOR CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL ) REVERSE RECOVERY CURRENT (A) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE EMITTER-COLLECTOR VOLTAGE (V) REVERSE RECOVERY CURRENT (A) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA ) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA ) 103 104 102 101 101 102 100 10-1 102101 23 5 7 103 10423 5 7 23 5 7 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 trr Irr VCC = 1500V, VD = 24V VCIN = 0V ↔ 24V Tj = 125°C, Inductive load VCC ≤ 2200V, VD = 24V Tj = 125°C VCC ≤ 2200V, di/dt ≤ 5400A/µs Tj = 125°C Single Pulse, TC = 25°C Rth(j–c)Q = 10K/kW Rth(j–c)R = 20K/kW