PM100CSA120

PM100CSA120 MITSUBISHI | Alldatasheet

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Sep.1998 V V V V V V V 10. 11. 12. 13. 14. 15. 16. U U VV W W WPC UPI VPI WPI NC NI P N P P N N UPC FO V VPC 17. 18. 19. NC OWF OVF OUF AC R B A YY CE V F W M M S Z D Z J Q Q T H AC W W W AH AH G N V B P WU Z Y Z Y AB - THD (6 TYP.) AA - DIA. (4 TYP.) 3 AE (15 TYP.) 4 5678 9 1 1 12 14 16 18 13 15 17 19 P AF AG X AD N L K U 2.54 MM DIA. (2 TYP.) 0.5 MM SQ. PIN (19 TYP.) VV CC S I GND GND OUT UPI V U FO UP UPC F O IN V CC S I GND GND OUT F O IN V CC S I GND GND OUT F O IN V V FO V V FO VPI V VP VPC WPI W WP WPC V CC S I GND GND OUT F O IN V CC S I GND GND OUT F O IN U N V CC S I GND GND OUT F O IN V V W NV NI N NC TEMP NC FO PUVWNNC Description: Mitsubishi Intelligent Power Mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20kHz. Built-in control circuits pro- vide optimum gate drive and pro- tection for the IGBT and free-wheel diode power devices. Features: u Complete Output Power Circuit u Gate Drive Circuit u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM100CSA120 is a 1200V,

100 Ampere Intelligent Power Mod-

ule. Type Current Rating V CES Amperes Volts (x 10) PM 100 120 Dimensions Inches Millimeters D 4.27 108.5 F 3.29 83.5 G 2.01 51.0 H 1.602 40.68 J 1.54 39.0 K 1.37 34.7 L 1.33 33.7 M 1.02 26.0 P 0.84 21.3 Q 0.79 20.0 R 0.780 19.82 Dimensions Inches Millimeters S 0.69 17.5 T 0.65 16.5 U 0.52 13.2 V 0.43 11.0 W 0.39 10.0 X 0.31 8.0 Y 0.285 7.25 Z 0.24 6.0 AA 0.22 Dia. Dia. 5.5 AD Metric M5 M5 AC 0.128 3.22 AD 0.10 2.6 AE 0.08 2.0 AF 0.07 1.8 AG 0.06 1.6 AH 0.02 0.5 Outline Drawing and Circuit Diagram MITSUBISHI INTELLIGENT POWER MODULES PM100CSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM100CSA120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol PM100CSA120 Units Power Device Junction Temperature T j -20 to 150 °C Storage Temperature T stg -40 to 125 °C Case Operating Temperature T C -20 to 100 °C Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N · m Mounting Torque, M5 Main Terminal Screws — 1.47 ~ 1.96 N · m Module Weight (Typical) — 920 Grams Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) V CC(prot.) 800 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms Control Sector Supply Voltage (Applied between VUP1 -VUPC , VVP1 -VVPC , VWP1 -VWPC , VN1 -VNC )V D 20 Volts Input Voltage (Applied between UP-VUPC , VP-VVPC , WP-VWPC , UN · VN · WN -VNC )V CIN 20 Volts Fault Output Supply Voltage (Applied between UFO -VUPC , VFO -VVPC , WFO -VWPC , FO -VNC ) VFO 20 Volts Fault Output Current (Sink Current of UFO , VFO , WFO and FO Terminal) I FO 20 mA IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) V CES 1200 Volts Collector Current, (TC = 25°C) I C 100 Amperes Peak Collector Current, (TC = 25°C) I CP 200 Amperes Supply Voltage (Applied between P - N) V CC 900 Volts Supply Voltage, Surge (Applied between P - N) V CC(surge) 1000 Volts Collector Dissipation P C 595 Watts

Sep.1998 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Over Current Trip Level Inverter Part OC -20 °C ≤ T ≤ 125°C, VD = 15V 145 230 — Amperes Short Circuit Trip Level Inverter Part SC -20 °C ≤ T ≤ 125°C, VD = 15V — 340 — Amperes Over Current Delay Time t off(OC) VD = 15V — 10 — µs Over Temperature Protection OT Trip Level 111 118 125 °C OT r Reset Level — 100 — °C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts UV r Reset Level — 12.5 — Volts Supply Voltage V D Applied between VUP1 -VUPC , 13.5 15 16.5 Volts VVP1 -VVPC , VWP1 -VWPC , VN1 -VNC Circuit Current I D VD = 15V, VCIN = 15V, VN1 -VNC —4 05 5 m A VD = 15V, VCIN = 15V, VXP1 -VXPC —1 31 8 m A Input ON Threshold Voltage V th(on) Applied between 1.2 1.5 1.8 mA Input OFF Threshold Voltage V th(off) U P-VUPC , VP-VVPC , WP-VWPC , 1.7 2.0 2.3 mA U N · VN · WN -VNC PWM Input Frequency f PWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current I FO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA Minimum Fault Output Pulse Width t FO VD = 15V 1.0 1.8 — ms MITSUBISHI INTELLIGENT POWER MODULES PM100CSA120 FLAT-BASE TYPE INSULATED PACKAGE

Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM100CSA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I CES VCE = VCES , Tj = 25°C — — 1.0 mA VCE = VCES , Tj = 125°C— — 1 0 m A Diode Forward Voltage V EC -IC = 100A, VD = 15V, VCIN = 0V — 2.5 3.5 Volts Collector-Emitter Saturation Voltage V CE(sat) VD = 15V, VCIN = 15V, IC = 100A — 2.5 3.5 Volts VD = 15V, VCIN = 15V, IC = 100A, — 2.2 3.2 Volts Tj = 125°C Inductive Load Switching Times t on 0.5 1.0 2.5 µs trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs tC(on) VCC = 600V, IC = 100A — 0.4 1.0 µs toff Tj = 125°C — 2.5 3.5 µs tC(off) — 0.7 1.2 µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)Q Each IGBT — — 0.21 °C/Watt R th(j-c)F Each FWDi — — 0.35 °C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module, — — 0.018 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across P-N Terminals 0 ~ 800 Volts VD Applied between VUP1 -VUPC , 15 ± 1.5 Volts VN1 -VNC , VVP1 -VVPC , VWP1 -VWPC Input ON Voltage V CIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage V CIN(off) UP-VUPC , VP-VVPC , WP-VWPC , 4.0 ~ V D Volts U N · VN · W N -VNC PWM Input Frequency f PWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time t dead Input Signal ≥ 3.0 µs

Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM100CSA120 FLAT-BASE TYPE INSULATED PACKAGE SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, I C , (AMPERES) SATURATION VOLTAGE V CE(sat), (VOLTS) 0 120 40 80 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SUPPLY VOLTAGE, V D , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) 12 14 16 18 20 Tj = 25oC Tj = 125oC VD = 15V VCIN = 0V 01 2 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) 120 Tj = 25oC VCIN = 0V VD = 17V 100 101 102 103 10-1 COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIMES, ton, toff, (µs) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton 100 101 toff VCC = 600V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 101 102 103 10-1 COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIMES, tc(on), tc(off), (µs) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) tc(on) 100 101 tc(off) VCC = 600V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 101 102 103 10-2 COLLECTOR REVERSE CURRENT, -I C , (AMPERES) REVERSE RECOVERY TIME, t rr, (µs) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 10-1 100 VCC = 600V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) 101 102 trr Irr 00 1.0 2.5 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) COLLECTOR REVERSE CURRENT, -I C , (AMPERES) DIODE FORWARD CHARACTERISTICS 101 102 0.5 1.5 2.0 Tj = 25oC Tj = 125oC VD = 15V VCIN = 15V 100 110 120 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) SUPPLY VOLTAGE, V D , (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) 12 14 16 18 20 Tj = 25oC 120 OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL) JUNCTION TEMPERATURE, T j, (oC) OVER CURRENT TRIP LEVEL % (NORMALIZED) 0 50 100 150-50 VD = 15V 110 100

Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM100CSA120 FLAT-BASE TYPE INSULATED PACKAGE 100 120 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j, (oC) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) -50 0 50 100 150 VD = 15V CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) JUNCTION TEMPERATURE, T j, (oC) UV TRIP-RESET LEVEL, UV t, UVr, (VOLTS) -50 150 05 0 100 UV t UV r TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) 101 10-1 100 101 100 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = R th(j-c)Q = 0.21oC/W 10-210-3 TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-1 100 101 100 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = R th(j-c)F = 0.35oC/W 10-210-3