PMD19D NJSEMI | Alldatasheet

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, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD18D, 19D SERIES

300 WATT (50 AMP CONTINUOUS, 100 AMP PEAK

PMD18D, PMD19D80 PMD18D, PMD19D100 Collector Base Voltage PM0180. PMD19D80 PMD18D, PMD19D100 Emitter Base Voltage Collector Current Continuous Peak Base Current Thermal Resistance Total Internal Power Dissipation <a Tc = 50°C' Operating Junction and Storage Temperature SYMBOL VCEO VCBO VE,o Ic IB PO TSTB MAXIMUM 100 100 100 1.5 0.4 300 -65 to +200 UNITS Vdc Vdc Vdc Adc Adc • "C/Watt Watts "> For operation above Tc - 80°C. derate (a 2.5 W/°C.

FEATURES

  • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C
  • Guaranteed and 100% tested for ISB (Secondary Breakdown Current) insur- ing maximum performance at high energy levels
  • Low thermal resistance for more use- able power and lower operating temperatures
  • Hermetically sealed NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS

All parameters are guaranteed at T, = 0 to 200°C, unless otherwise specified. Parameter Symbol Test Conditions Minimum Maximum Units ON CHARACTERISTICS Collector Emitter Saturation Voltage1 Base Emitter Turn-on Voltage1 Base Emitter Saturation1 DC Current Gain1 PMD18D80, 100 PMD19D80, 100 Forward Bias Secondary Breakdown Current VcE(sat) VBE<O") VsElsat) HFE l«b lc = 30Adc;lB = 120mAdc lc = 30 Adc; VCE = 3 Vdc lc = 30Adc;lB = 120mAdc lc = 30 Adc; VCE = 3 Vdc L - 25'C VCE = 30 Vdc; TA = 25°C 1 sec non-repetitive pulse 1000 800 10.0 2.0 2.8 2.8 20,000 20,000 Vdc Vdc Vdc Adc OFF CHARACTERISTICS Collector Emitter Breakdown Voltage1 (Base Open) PMD18D, 19D80 PMD18D, 190100 Collector Emitter Sustaining Voltage1 PMD18D, 19080 PMD18D, 19D100

  • mitter Base Leakage Current Collector Emitter Leakage Current PMD18D, 19D80 PMD18D, 19D100 V(BR)CEO VISUSICEO IEBO ICER ICE = 100 mAdc; T, = 25°C lce = 100 mAdc; RBE = 2.2M1 VEB = 5 Vdc; lc = OA VCE = 54 Vdc; RBE = 2.2kn VCE = 67 Vdc; RBE = 2.2kO 100 100 6.0 15.0 15.0 Vdc Vdc. mAdc mAdc DYNAMIC CHARACTERISTICS Output Capacitance imall Signal Current Gain tommon Emitter ihort Circuit t>rward Transfer iatio Co, h,. nf. VCB = 10 Vdc; IE = 0 Adc f = 1 MHz; L = 25°C lc = 18 Adc; VCE = 3 Vdc f = 1 kHz; L - 25'C lc = 18 Adc: VCE = 3 Vdc f = 1 MHz; Tj = 25°C 300 1200 PF