PIP3107-D

PIP3107-D PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Logic level TOPFET PIP3107-D DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in a 3 pin surface mount ID Continuous drain current 16 A plastic package. P D Total power dissipation 65 W Tj Continuous junction temperature 150 ˚C APPLICATIONS R DS(ON) Drain-source on-state resistance 50 m Ω General purpose switch for driving IISL Input supply current V IS = 5 V 650 µA lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input

5 V logic compatible input level

Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads Fig.1. Elements of the TOPFET. PINNING - SOT428 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 input 2 drain 3 source tab drain DRAIN SOURCE INPUT RIG LOGIC AND PROTECTION O / V CLAMP POWER MOSFET tab P D S I TOPFET October 2001 1 Rev 1.000

Philips Semiconductors Product specification Logic level TOPFET PIP3107-D LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Continuous drain source voltage1 - - 50 V ID Continuous drain current V IS = 5 V; Tmb = 25 ˚C - self - A limited ID Continuous drain current V IS = 5 V; Tmb ≤ 125 ˚C - 16 A II Continuous input current - -5 5 mA IIRM Non-repetitive peak input current tp ≤ 1 ms -10 10 mA PD Total power dissipation T mb ≤ 25 ˚C - 65 W Tstg Storage temperature - -55 175 ˚C Tj Continuous junction temperature2 normal operation - 150 ˚C Tsold Case temperature during soldering - 260 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Inductive load turn-off IDM = 16 A; VDD ≤ 20 V EDSM Non-repetitive clamping energy T mb ≤ 25 ˚C - 200 mJ EDRM Repetitive clamping energy T mb ≤ 95 ˚C; f = 250 Hz - 32 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load. SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT VDS Drain source voltage3 4 V ≤ VIS ≤ 5.5 V 0 35 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance R th j-mb Junction to mounting base - - 1.75 1.92 K/W R th j-a Junction to ambient minimum footprint FR4 PCB - 70 - K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 All control logic and protection functions are disabled during conduction of the source drain diode. October 2001 2 Rev 1.000

Philips Semiconductors Product specification Logic level TOPFET PIP3107-D OUTPUT CHARACTERISTICS Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Off-state VIS = 0 V V(CL)DSS Drain-source clamping voltage ID = 10 mA 50 - - V IDM = 2 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V IDSS Drain source leakage current VDS = 40 V - - 100 µA Tmb = 25 ˚C - 0.1 10 µA On-state IDM = 6 A; tp ≤ 300 µs; δ ≤ 0.01 R DS(ON) Drain-source resistance V IS ≥ 4.4 V - - 95 m Ω Tmb = 25 ˚C - 36 50 m Ω VIS ≥ 4 V - - 100 m Ω Tmb = 25 ˚C - 39 55 m Ω OVERLOAD CHARACTERISTICS -40˚C ≤ Tmb ≤ 150˚C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load VDS = 13 V ID Drain current limiting V IS = 5 V; T mb = 25˚C 16 24 32 A 4.4 V ≤ VIS ≤ 5.5 V 12 - 36 A 4 V ≤ VIS ≤ 5.5 V 8 - 36 A Overload protection VIS = 5 V;Tmb = 25˚C PD(TO) Overload power threshold device trips if PD > PD(TO) 40 120 160 W TDSC Characteristic time which determines trip time 1 200 350 600 µs Overtemperature protection Tj(TO) Threshold junction 150 170 - ˚C temperature2 1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ]. 2 This is independent of the dV/dt of input voltage VIS. October 2001 3 Rev 1.000

Philips Semiconductors Product specification Logic level TOPFET PIP3107-D INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input. Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIS(TO) Input threshold voltage V DS = 5 V; ID = 1 mA 0.6 - 2.4 V Tmb = 25˚C 1.1 1.6 2.1 V IIS Input supply current normal operation; V IS = 5 V 100 220 400 µA VIS = 4 V 80 195 330 µA IISL Input supply current protection latched; V IS = 5 V 200 400 650 µA VIS = 3 V 130 250 430 µA VISR Protection reset voltage1 reset time tr ≥ 100 µs 1.5 2 2.9 V tlr Latch reset time V IS1 = 5 V, VIS2 < 1 V 10 40 100 µs V(CL)IS Input clamping voltage I I = 1.5 mA 5.5 - 8.5 V R IG Input series resistance2 Tmb = 25˚C - 33 - k Ω to gate of power MOSFET SWITCHING CHARACTERISTICS Tmb = 25 ˚C; VDD = 13 V; resistive load RL = 4 Ω . Refer to waveform figure and test circuit. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT td on Turn-on delay time V IS = 5 V - 15 30 µs tr Rise time - 30 60 µs td off Turn-off delay time V IS = 0 V - 70 140 µs tf Fall time - 35 70 µs 1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals. October 2001 4 Rev 1.000

Philips Semiconductors Product specification Logic level TOPFET PIP3107-D MECHANICAL DATA Fig.2. SOT428 surface mounting package1, centre pin connected to mounting base. REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT428 98-04-07 0 10 20 mm scale Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 E b2 D 1 wA Mbcb1 L1L D H E Note 1. Measured from heatsink back to lead. e A A2 A y seating plane mounting base A 1(1) D max.b D 1 max. E max. H E max. w y max.A 2 b2 max. c min. ee 1 min. L2LA max.UNIT DIMENSIONS (mm are the original dimensions) 0.2 0.2mm 2.38 2.22 0.65 0.45 0.89 0.71 0.89 0.71 1.1 0.9 5.36 5.26 0.4 0.2 6.22 5.98 4.81 4.45 2.285 4.57 10.4 9.6 0.5 0.7 0.5 6.73 6.47 4.0 2.95 2.55 1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.1 g For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18. October 2001 5 Rev 1.000

Philips Semiconductors Product specification Logic level TOPFET PIP3107-D DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 1 STATUS 2 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 2001 6 Rev 1.000