PHPT610030NPK NEXPERIA | Alldatasheet
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10 September 2020 Product data sheet
Device (SMD) power plastic package.
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
- High energy efficiency due to less heat generation
- AEC-Q101 qualified 3. Applications
- Motor control
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
- Relay replacement 4. Quick reference data
Table 1. Quick reference data
Table 2. Pinning information
1 E1 emitter TR1
2 B1 base TR1
3 E2 emitter TR2
4 B2 base TR2
5 C2 collector TR2
6 C2 collector TR2
7 C1 collector TR1
8 C1 collector TR1
Table 3. Ordering information Table 4. Marking codes
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Power dissipation from junction to mounting base. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
NPN/PNP high power double bipolar transistor aaa-014343 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 102 Zth(j-a) (K/W) 10-1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 FR4 PCB, mounting pad for collector 6 cm2 Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 5 / 18
Table 7. Characteristics
NPN/PNP high power double bipolar transistor Symbol Parameter Conditions Min Typ Max Unit VCE = -10 V; IC = -500 mA; Tamb = 25 °C 150 200 - VCE = -10 V; IC = -1 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C 80 210 - VCE = -10 V; IC = -2 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C 20 100 - hFE DC current gain VCE = -10 V; IC = -3 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C 10 40 - IC = -500 mA; IB = -50 mA; Tamb = 25 °C - -70 -110 mVVCEsat collector-emitter saturation voltage IC = -2 A; IB = -0.2 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - -220 -360 mV RCEsat collector-emitter saturation resistance IC = -2 A; IB = -200 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - 110 180 mΩ IC = -1 A; IB = -50 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - -0.91 -1 VVBEsat base-emitter saturation voltage IC = -2 A; IB = -200 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - -1.02 -1.2 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - -0.68 -0.9 V td delay time - 20 - ns tr rise time - 180 - ns ton turn-on time - 200 - ns ts storage time - 350 - ns tf fall time - 220 - ns toff turn-off time VCC = -12.5 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 °C - 570 - ns fT transition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C - 125 - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 30 - pF aaa-010261 200 100 300 400 hFE IC (mA) 10-1 1041031 10210 (1) (3) (2) VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. TR1 (NPN): DC current gain as a function of collector current; typical values VCE (V) 0 542 31 aaa-010267 IC (A) IB = 50 mA Tamb = 25 °C Fig. 5. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 7 / 18
NPN/PNP high power double bipolar transistor aaa-010262 0.8 0.4 0.6 0.2 1.0 1.2 1.4 VBE (V) IC (mA) 10-1 1041031 10210 (1) (3) (2) VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 6. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values aaa-010265 0.6 0.8 0.4 1.0 1.2 VBEsat (V) 0.2 IC (mA) 10-1 1041031 10210 (1) (3) (2) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 7. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values aaa-010263 IC (mA) 10-1 1041031 10210 10-2 10-1 VCEsat (V) 10-3 (1) (3) (2) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values aaa-010264 IC (mA) 10-1 1041031 10210 10-2 10-1 VCEsat (V) 10-3 (1) (3) (2) Tamb = 25 °C (1) IC/IB = 50 (2) IC/IB = 20 (3) IC/IB = 10 Fig. 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 8 / 18
NPN/PNP high power double bipolar transistor IC (mA) 10-1 1041031 10210 aaa-010266 10-1 102 103 RCEsat (Ω) 10-2 (1) (1) (3) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 10. TR1 (NPN): Collector-emitter saturation resistance as a function of collector current; typical values IC (mA) 10-1 1041031 10210 aaa-010268 10-1 102 103 RCEsat (Ω) 10-2 (1) (3) (2) Tamb = 25 °C (1) IC/IB = 50 (2) IC/IB = 20 (3) IC/IB = 10 Fig. 11. TR1 (NPN): Collector-emitter saturation resistance as a function of collector current; typical values aaa-010858 200 300 100 400 500 hFE IC (mA) (1) (3) (2) VCE = −10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 12. TR2 (PNP): DC current gain as a function of collector current; typical values VCE (V) 0 -5-4-2 -3-1 aaa-010859 -1.0 -1.5 -0.5 -2.0 -2.5 IC (A) IB = -50 mA -10 -15 -20 -45 -40 -35 -30 -25 Tamb = 25 °C Fig. 13. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 9 / 18
NPN/PNP high power double bipolar transistor aaa-010860 -0.8 -0.4 -1.2 -1.6 VBE (V) IC (mA) (1) (3) (2) VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 14. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values aaa-010861 -0.6 -0.8 -0.4 -1.0 -1.2 VBEsat (V) -0.2 IC (mA) (1) (3) (2) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 15. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values aaa-010862 IC (mA) -10-2 -10-1 -10 VCEsat (V) -10-3 (1) (2) (3) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 16. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values aaa-010863 IC (mA) -10-2 -10-1 -10 VCEsat (V) -10-3 (1) (3) (2) Tamb = 25 °C (1) IC/IB = 50 (2) IC/IB = 20 (3) IC/IB = 10 Fig. 17. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 10 / 18
NPN/PNP high power double bipolar transistor IC (mA) aaa-010864 10-1 102 103 RCEsat 10-2 (1) (2) (3) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 18. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values IC (mA) aaa-010865 10-1 102 103 RCEsat (Ω) 10-2 (1) (3) (2) Tamb = 25 °C (1) IC/IB = 50 (2) IC/IB = 20 (3) IC/IB = 10 Fig. 19. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 11 / 18
NPN/PNP high power double bipolar transistor 11. Test information 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff Fig. 20. TR1 (NPN): BISS transistor switching time definition RC DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ωoscilloscope oscilloscope VBB VI VCC Fig. 21. TR1 (NPN): Test circuit for switching times PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 12 / 18
NPN/PNP high power double bipolar transistor 006aaa266 - IBon (100 %) - IB input pulse (idealized waveform) - IBoff 90 % 10 % - IC (100 %) - IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff Fig. 22. TR2 (PNP): BISS transistor switching time definition RC DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ωoscilloscope oscilloscope VBB VI VCC Fig. 23. TR2 (PNP): Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 13 / 18
NPN/PNP high power double bipolar transistor 12. Package outline ReferencesOutline version European projection Issue date IEC JEDEC JEITA SOT1205 sot1205_po 14-08-21 14-10-28 Unit mm max nom min 1.05 1.02 0.1 0.0 4.4 4.1 0.25 0.19 0.30 0.24 4.70 4.45 5.30 4.95 0.85 0.60 0.85 0.40 A Dimensions Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. Plastic single ended surface mounted package LFPAK56D; 8 leads SOT1205 A1 b 0.50 0.35 b1 c c1 D(1) 0.1 y θD1(1) 4.55 4.35 3.5 3.4 (ref) E(1) E1(1) 1.8 1.6 E2 e 1.27 H 6.2 5.9 L 1.3 0.8 0.55 0.30 Lp 0.25 w 0 2.5 5 mm scale detail X A1 C Lp θ Cy mounting base c X A A e b (8x) w A D E H L 1 2 3 4 Fig. 24. Package outline LFPAK56D; Dual LFPAK (SOT1205) PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 14 / 18
NPN/PNP high power double bipolar transistor 13. Soldering 1.27 0.7 (4x) SOT1205Footprint information for reflow soldering of LFPAK56D package sot1205_froccupied area solder land solder resist solder land plus solder paste solder paste deposit Dimensions in mm 5.85 0.8 2.0 1.0 (2x) 2.1 3.2 3.325 2.7 3.85 3.975 1.275 3.175 1.875 0.0625 0.025 3.81 3.81 1.44 1.27 1.1 (2x) 0.7 (4x) Fig. 25. Reflow soldering footprint for LFPAK56D; Dual LFPAK (SOT1205) PHPT610030NPK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 15 / 18
Table 8. Revision history
NPN/PNP high power double bipolar transistor 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. 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Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 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