PHM5601 NIEC | Alldatasheet

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MOSFET MODULE Single 560A /150VSingle 560A /150VSingle 560A /150VSingle 560A /150V PHM5601PHM5601PHM5601PHM5601 MAXMUM RATINGS Ratings Symbol PHM5601 Unit Drain-Source Voltage (VGS=0V) V DSS 150 V Gate - Source Voltage V GSS +/ - 20 V Duty=50% 560 (Tc=25 °C) Continuous Drain Current D.C. ID 440 (Tc=25°C) A Pulsed Drain Current I DM 1,120 Tc=25 °C) A Total Power Dissipation P D 1,780 Tc=25 °C) W Operating Junction Temperature Range T jw -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminals to Base AC, 1 min.) V ISO 2,500 V Module Base to Heatsink 3.0 Gate Terminals M4 1.4 Mounting Torque Bus Bar to Main Terminals FTOR M8 10.5 N•m ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Zero Gate Voltage Drain Current I DSS VDS=VDSS,VGS=0V - - 3.2 mA Gate-Source Leakage Current I GSS V GS=+/- 20V,VDS=0V - - 3.2 µA Gate-Source Threshold Voltage V GS(th) V DS=VGS, ID=16mA 1.0 2.0 3.2 V Static Drain-Source On-Resistance r DS(on) V GS=10V, ID=560A - 1.6 2.0 m-ohm Drain-Source On-Voltage V DS(on) V GS=10V, ID=560A - 1.0 1.2 V Forward Transconductance g fs V DS=15V, ID=560A - - - S Input Capacitance C ies - 110 - nF Output Capacitance C oss - 13 - nF Reverse Transfer Capacitance C rss VDS=10V,VGS=0V,f=1MHz - 13 - nF Rise Time t r - 400 - Turn-On Delay Time t d(on) - 380 - Fall Time tf - 170 - Turn-Off Delay Time t d(off) VDD= 80V ID=280A VGS= -5V, +10V RG= 1.2 ohm - 1,100 - ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Duty=50%. - - 560 Continuous Source Current I S D.C. (Terminal Temperature=80°C 450 A Pulsed Source Current I SM - - - 1,120 A Diode Forward Voltage V SD I S=560A - 1.6 2.0 V Reverse Recovery Time t rr IS=560A, -dis/dt=1,100A/µs - 130 - ns THERMAL CHRACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit Thermal Resistance, Junction to Case Rth(j-c) - - 0.07 Thermal Resistance, Case to Heatsink Rth(c-f) Mounting surface flat, smooth, and greased - - 0.035 °C/W

FEATURES

  • Trench Gate MOS FET Module * Super Low Rds(ON) 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g OUTLINE DRAWING Circuit

PHM5601 OUTLINE DRAWING (Dimensions in mm)

0 0.5 1 1.5 2 2.5 3 3.5 40 200 400 600 800 1000 1200 Drain to Source Voltage V DS (V) DrainCurrent I D (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 4VVGE=10V 250 μs PULSE TEST 02468 1 0 1 2 1 4 1 60 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical) TC=25 ℃ ID=140A ID=280A ID=560A 250 μs PULSE TEST -50 0 50 100 1500 0.5 1.5 2.5 Junction Temperature Tj (℃) Drain to Source Voltage V DS (V) Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical) VGS=10V ID=140A ID=280A ID=560A 250 μs PULSE TEST 0 500 1000 1500 2000 2500 3000 3500 4000 45000 Total Gate Charge Qg (nC) Gate to Source Voltage V GS (V) Fig.5- Gate Charge vs. Gate to Source Voltage (Typical) VDD=80V ID=560A VDD=40V VDD=20V 1 2 5 10 20 50 100 2000.1 0.2 0.5 100 Series Gate Impedance R G (Ω) Switching Time t (μs) Fig.6- Series Gate Impedance vs. Switching Time (Typical) VDD=80V ID=280A TC=25 ℃ tf tr td(on) td(off) 0.5 1 2 5 10 20 50 800 25000 50000 75000 100000 125000 150000 Drain to Source Voltage V DS (V) Capacitance C (nF) Fig.4- Capacitance vs. Drain to Source Voltage (Typical) Ciss Coss Crss VGS=0V f=1MHZ TC=25 ℃

ç 0 100 200 300 400 500 6000 0.2 0.4 0.6 0.8 1.2 Drain Current I D (A) Switching Time t (μs) Fig.7- Drain Current vs. Switching Time (Typical) td(off) tf tr td(on) VDD=80V RG=1.2 Ω TC=25 ℃ 200 400 600 800 1000 1200 Source to Drain Voltage V SD (V) Source Current I S (A) Fig.8- Source to Drain Diode Forward Characteristics (Typical) TJ=125 ℃ TJ=25 ℃ 0 500 1000 1500 2000 2500 100 200 500 -di/dt (A/μs) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr -IS=800A TJ=125 ℃ 10-5 10-4 10-3 10-2 10-1 11 0 11x10 -3 3x10 -3 1x10 -2 3x10 -2 1x10 -1 SQUARE WAVE PULSE DURATION t (s) Transient Thermal Impedance Rth (J-C) (℃/W) Fig.10- Maximun Transient Thermal Impedance