PH635-S8

PH635-S8 SJM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

17.0 dB Gain at 900MHz +31 dBm P1dB +46 dBm Output IP3 Dual Bias Supply Lead-free / Green / RoHS- compliant SOIC-8 Package

Applications

Cellular, GSM PCS, WCDMA, WiBro, WiMax W-LAN / ISM RFID / Fixed Wireless Functional Diagram Function Pin No. RF IN 3 RF OUT / Vcc 6,7 Vref 1 Ground / NC 2,4,5 / 8 The PH635-S8 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOIC-8 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH635-S8 operates from a single +5.5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested

Description

Symbol Parameters Units Freq. Min. Typ. Max. S21 Gain dB

900 MHz

1950 MHz

2140 MHz

17.0 12.8 11.5 S11 Input Return Loss dB -10 -13 -13 S22 Output Return Loss dB -11 -14 - 13 P1dB Output Power @1dB compression dBm 31.0 31.0 31.0 OIP3 Output Third Order intercept dBm 45.5 45.5 45.0 NF Noise Figure dB 5.0 4.3 4.4 V / I Device voltage / current V/mA 5.5/455 Rth Thermal Resistance °C/W 16 Test Conditions : T=25°C, Supply Voltage=+5.5V, 50ohm System, OIP3 measured with two tones at an output power of +16dBm/ton e separated by 1MHz. http://www.prewell.com

High Linearity InGaP HBT Amplifier October 2013

900 MHz Application Circuit

www.Prewell.com Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1mm(39mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) an d Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is coil inductor RF_IN RF_OUT Vcc R1 3 5 7 9 11 11 9 7 5 3 L1 Frequency 900 MHz S21 : Gain 17.2 dB S11 : Input Return Loss -10 dB S22 : Output Return Loss -12 dB Output P1dB +31.2 dBm Output IP3 @16dBm +46.5 dBm Noise Figure 5.0 dB Supply Voltage 5.5 V Current 455 mA http://www.prewell.com Vref 800 850 900 950 1000 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 800 850 900 950 1000 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 -20 -16 -12 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C 800 850 900 950 1000 56 +16dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=900MHz, +16dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o

High Linearity InGaP HBT Amplifier October 2013 Frequency 1950 MHz S21 : Gain 13.0 dB S11 : Input Return Loss -14 dB S22 : Output Return Loss -14 dB Output P1dB +31.2 dBm Output IP3 @16dBm +46.5 dBm Noise Figure 4.3 dB Supply Voltage 5.5 V Current 455 mA

1950 MHz Application Circuit

www.Prewell.com RF_IN Vcc R1 3 5 7 9 1111 9 7 5 3 L1 Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1mm(39mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) an d Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is coil inductor http://www.prewell.com Vref 1850 1900 1950 2000 2050 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C 1850 1900 1950 2000 2050 56 +16dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=1950MHz, +16dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 1850 1900 1950 2000 2050 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C RF_OUT

High Linearity InGaP HBT Amplifier October 2013 Frequency 2140 MHz S21 : Gain 11.8 dB S11 : Input Return Loss -15 dB S22 : Output Return Loss -14 dB Output P1dB +31.1 dBm Output IP3 @16dBm +46.0 dBm Noise Figure 4.4 dB Supply Voltage 5.5 V Current 460 mA

2140 MHz Application Circuit

www.Prewell.com RF_IN Vcc R1 3 5 7 9 11 11 9 7 5 3 L1 Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1mm(39mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) an d Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is coil inductor http://www.prewell.com Vref 2050 2100 2150 2200 2250 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2050 2100 2150 2200 2250 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C 2050 2100 2150 2200 2250 56 +16dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2140MHz, +16dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o RF_OUT

High Linearity InGaP HBT Amplifier October 2013 22.1dBm @40dBc 20.6dBm @45dBc 16.3dBm @55dBc 19.1dBm @50dBc 21.8dBm @40dBc 20.3dBm @45dBc 15.9dBm @55dBc 18.5dBm @50dBc 14 16 18 20 22 -60 -55 -50 -45 -40 4FA W-CDMA ACLR vs. Channel Power 3GPP W-CDMA 4FA, Test Model5 + w/8HSPDSCH ACLR(dBc) Output Channel Power(dBm) freq=1.95GHz,+25 o C Vcc=5.5V 5MHz Offset 10MHz Offset 14 16 18 20 22 -60 -55 -50 -45 -40 4FA W-CDMA ACLR vs. Channel Power 3GPP W-CDMA 4FA, Test Model5 + w/8HSPDSCH ACLR(dBc) Output Channel Power(dBm) freq=2.14GHz,+25 o C Vcc=5.5V 5MHz Offset 10MHz Offset Vcc=5.5V Vcc=5.5V 1920 1930 1940 1950 1960 1970 1980 -70 -60 -50 -40 -30 -20 -10 5MHz Offset +25 o C Center 1950MHz #RBW 30kHz #VBW 1kHz Span 59.68MHZ 4FA W-CDMA ACLR @1950MHz Frequency(MHz) 2110 2120 2130 2140 2150 2160 2170 -70 -60 -50 -40 -30 -20 -10 5MHz Offset +25 o C Center 2140MHz #RBW 30kHz #VBW 1kHz Span 59.68MHZ 4FA W-CDMA ACLR @2140MHz Frequency(MHz)

High Linearity InGaP HBT Amplifier October 2013 Evaluation Board Layout (4x4) ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. Lead-free /RoHS Compliant / Green SOIC-8 Package Outline Land Pattern http://www.prewell.com Absolute Maximum Ratings Parameter Rating Unit Device Voltage +6 V Device Current 650 mA RF Power Input 25 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Junction Temperature 185 °C Operation of this device above any of these parameters may cause permanent damage.