PH530-S8

PH530-S8 SJM | Alldatasheet

Document overview

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• PDF pages: 7

Technical content

Features

20.0 dB Gain at 900MHz +30 dBm P1dB +45 dBm Output IP3 Single Voltage Supply Lead-free / Green / RoHS- compliant SOIC-8 Package

Applications

Cellular, GSM PCS, WCDMA, WiBro, WiMax W-LAN / ISM RFID / Fixed Wireless Functional Diagram Function Pin No. RF IN 3 RF OUT / Bias 6,7 N/C 1,8 Ground 2,4,5 The PH530-S8 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOIC-8 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH530-S8 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested

Description

Symbol Parameters Units Freq. Min. Typ. Max. S21 Gain dB

900 MHz

1900 MHz

2140 MHz

2350 MHz

20.0 15.7 14.8 14.0 S11 Input Return Loss dB -16 -18 -18 -15 S22 Output Return Loss dB -13 -15 - 20 -16 P1dB Output Power @1dB compression dBm 30.0 29.5 29.5 29.5 OIP3 Output Third Order intercept dBm 45.0 46.0 46.0 45.0 NF Noise Figure dB 3.9 3.9 4.1 4.1 V / I Device voltage / current V/mA 5/260 Rth Thermal Resistance °C/W 44 Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +9dBm/tone s eparated by 1MHz.

High Linearity InGaP HBT Amplifier http://www.prewell.com October 2013 Frequency 900 MHz S21 : Gain 20.2 dB S11 : Input Return Loss -17 dB S22 : Output Return Loss -15 dB Output P1dB +30.0 dBm Output IP3 @8dBm +46.5 dBm IS-95A Ch. Power @ -45dBc ACPR +23.5 dBm Noise Figure 3.8 dB Supply Voltage 5 V Current 262 mA

900 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 -30 -24 -18 -12 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 800 850 900 950 1000 50 +8dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=900MHz, +8dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 800 850 900 950 1000 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 12 14 16 18 20 22 24 26 -70 -65 -60 -55 -50 -45 -40 IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset ACPR IS-95A vs. Channel Power ACPR(dBc) Output Channel Power(dBm) freq=900MHz

High Linearity InGaP HBT Amplifier http://www.prewell.com October 2013 Frequency 1900 MHz S21 : Gain 15.9 dB S11 : Input Return Loss -20 dB S22 : Output Return Loss -16 dB Output P1dB +29.7 dBm Output IP3 @9dBm +46.5 dBm IS-95A Ch. Power @ -45dBc ACPR +23.6 dBm Noise Figure 3.8 dB Supply Voltage 5 V Current 262 mA

1900 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 -30 -24 -18 -12 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 50 +9dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=1900MHz, +9dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 1800 1850 1900 1950 2000 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 12 14 16 18 20 22 24 26 -70 -65 -60 -55 -50 -45 -40 IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset ACPR IS-95A vs. Channel Power ACPR(dBc) Output Channel Power(dBm) freq=1.9GHz

High Linearity InGaP HBT Amplifier http://www.prewell.com October 2013 Frequency 2140 MHz S21 : Gain 15.0 dB S11 : Input Return Loss -20 dB S22 : Output Return Loss -23 dB Output P1dB +29.5 dBm Output IP3 @9dBm +46.5 dBm WCDMA Ch. Power @ -45dBc ACLR +21.0 dBm Noise Figure 4.0 dB Supply Voltage 5 V Current 262 mA

2140 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -50 -40 -30 -20 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -30 -24 -18 -12 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 50 +9dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2140MHz, +9dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 12 14 16 18 20 22 24 -60 -55 -50 -45 -40 -35 3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset W-CDMA ACLR vs. Channel Power ACLR(dBc) Output Channel Power(dBm) freq=2.14GHz 2050 2100 2150 2200 2250 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C

High Linearity InGaP HBT Amplifier http://www.prewell.com October 2013 Frequency 2350 MHz S21 : Gain 14.2 dB S11 : Input Return Loss -17 dB S22 : Output Return Loss -19 dB Output P1dB +29.6 dBm Output IP3 @9dBm +45.5 dBm Noise Figure 4.0 dB Supply Voltage 5 V Current 262 mA

2350 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2250 2300 2350 2400 2450 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2250 2300 2350 2400 2450 -30 -24 -18 -12 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 2450 2500 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 2250 2300 2350 2400 2450 50 +9dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2350MHz, +9dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 2250 2300 2350 2400 2450 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C

High Linearity InGaP HBT Amplifier http://www.prewell.com October 2013 Frequency 2550 MHz S21 : Gain 13.5 dB S11 : Input Return Loss -19 dB S22 : Output Return Loss -18 dB Output P1dB +29.0 dBm Output IP3 @9dBm +45.0 dBm Noise Figure 4.0 dB Supply Voltage 5 V Current 262 mA

2550 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2450 2500 2550 2600 2650 -30 -24 -18 -12 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2450 2500 2550 2600 2650 -30 -24 -18 -12 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2450 2500 2550 2600 2650 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80

48 Freq=2550MHz, +9dBm/tone

OIP3 vs. Temperature OIP3(dBm) Temperature( o 2450 2500 2550 2600 2650 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2450 2500 2550 2600 2650 50 +9dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C

High Linearity InGaP HBT Amplifier http://www.prewell.com October 2013 Lead-free /RoHS Compliant / Green SOIC-8 Package Outline Evaluation Board Layout (4x4) ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. Land Pattern Absolute Maximum Ratings Parameter Rating Unit Device Voltage +6 V Device Current 370 mA RF Power Input 20 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Junction Temperature 180 °C Operation of this device above any of these parameters may cause permanent damage.