PH435

PH435 SJM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

14.8 dB Gain at 2.3GHz +25 dBm P1dB +42 dBm Output IP3 Single Voltage Supply Lead-free / Green / RoHS- compliant SOT-89 Package

Applications

PCS, WCDMA, WiBro W-LAN / ISM RFID / Fixed Wireless Functional Diagram Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 The PH435 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH435 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested

Description

Symbol Parameters Units Freq. Min. Typ. Max. S21 Gain dB

1900 MHz

2140 MHz

2300 MHz

2600 MHz

16.8 15.1 14.8 13.0 S11 Input Return Loss dB -17 -17 -14 -11 S22 Output Return Loss dB -17 -14 -14 -11 P1dB Output Power @1dB compression dBm 25.5 25.5 25.5 26.0 OIP3 Output Third Order intercept dBm 42.0 42.0 42.5 39.5 NF Noise Figure dB 3.1 3.0 3.2 3.9 V / I Device voltage / current V/mA 5/152 Rth Thermal Resistance °C/W 34 Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +7dBm/tone separated by 1MHz.

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 1900 MHz S21 : Gain 17.0 dB S11 : Input Return Loss -19 dB S22 : Output Return Loss -19 dB Output P1dB +25.5 dBm Output IP3 @7dBm +42 dBm IS-95A Ch. Power @ -45dBc ACPR +19.0 dBm Noise Figure 3.1 dB Supply Voltage 5 V Current 152 mA

1900 MHz Application Circuit

-30 -24 -18 -12 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 2050 2100 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C -40 -20 0 20 40 60 80 Freq=1900MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 10 12 14 16 18 20 22 -70 -65 -60 -55 -50 -45 -40 IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset ACPR IS-95A vs. Channel Power ACPR IS-95 vs. Channel Power ACPR(dBc) Output Channel Power(dBm) freq=1.9GHz RF IN RF OUT1.5pF 20pF 22nH 20pF 1uF 2.0pF 1.0pF 50Ω/6mm

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 2140 MHz S21 : Gain 15.4 dB S11 : Input Return Loss -20 dB S22 : Output Return Loss -16 dB Output P1dB +26.0 dBm Output IP3 @7dBm +42 dBm WCDMA Ch. Power @ -45dBc ACLR +17.0 dBm Noise Figure 3.0 dB Supply Voltage 5 V Current 152 mA

2140 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -50 -40 -30 -20 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 50 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2140MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 2050 2100 2150 2200 2250 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 10 12 14 16 18 20 -60 -55 -50 -45 -40 3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset W-CDMA ACLR vs. Channel Power ACPR IS-95 vs. Channel Power ACLR(dBc) Output Channel Power(dBm) freq=2.14GHz RF IN RF OUT1.0pF 20pF 22nH 20pF 1uF 1.5pF 1.2pF 50Ω/6mm

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 2300 MHz S21 : Gain 15.0 dB S11 : Input Return Loss -15 dB S22 : Output Return Loss -15 dB Output P1dB +25.5 dBm Output IP3 @7dBm +42.5 dBm Noise Figure 3.1 dB Supply Voltage 5 V Current 152 mA

2300 MHz Application Circuit

-25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2200 2250 2300 2350 2400 2450 2500 50 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2300MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o RF IN RF OUT2.0pF 20pF 22nH 20pF 1uF 1.2pF 1.5pF 50Ω/6mm1.8pF

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 2600 MHz S21 : Gain 13.0 dB S11 : Input Return Loss -12 dB S22 : Output Return Loss -11 dB Output P1dB +26.3 dBm Output IP3 @9dBm +39.5 dBm Noise Figure 3.9 dB Supply Voltage 5 V Current 152 mA

2600 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25℃ -40℃ +85℃ 2500 2550 2600 2650 2700 -20 -16 -12 Input Return Loss S11(dB) Frequency(MHz) +25℃ -40℃ +85℃ 2500 2550 2600 2650 2700 -20 -16 -12 Output Return Loss S22(dB) Frequency(MHz) +25℃ -40℃ +85℃ 2500 2550 2600 2650 2700 NF(dB) Noise Figure vs. Frequency Frequency(MHz) +25℃ 2500 2550 2600 2650 2700 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25℃ -40℃ +85℃ 2500 2550 2600 2650 2700 50 +9dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25℃ -40℃ +85℃ -40 -20 0 20 40 60 80

46 Freq=2600MHz, +7dBm/tone

OIP3 vs. Temperature OIP3(dBm) Temperature(℃) 10 12 14 16 -56 -53 -50 -47 -44 -41 -38 freq=2.6GHz 3GPP W-CDMA 6FA, Test Model5 + w/8HSPDSCH 6FA W-CDMA ACLR vs. Channel Power ACLR(dBc) Output Channel Power(dBm) 5MHz 10MHz RF IN RF OUT1.0pF 20pF 22nH 20pF 1uF 0.75pF 1.5pF 50Ω/6mm1.0pF

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +6 V Supply Current 220 mA RF Power Input 12 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Junction Temperature for >106 hours MTTF 187 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline Evaluation Board Layout (4x4) ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 1 at +260°C Convection reflow, J-STD-020 Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. Product Code Lot Number